公开(公告)号：EP1494295A4

公开(公告)日：2009-07-08

申请号：EP03745971

申请日：2003-04-08

申请人： SONY CORP

发明人： HOSOMI MASANORI ,  MIZUGUCHI TETSUYA ,  OHBA KAZUHIRO ,  BESSHO KAZUHIRO ,  YAMAMOTO TETSUYA ,  KANO HIROSHI

IPC分类号： B60S5/00 ,  B21D1/12 ,  G01R33/09 ,  G11C11/15 ,  H01F10/16 ,  H01F10/187 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Reading characteristics, as well as writing characteristics, are improved by applying a more-novel-than-ever material to a ferromagnetic layer. A magnetoresistance effect element comprising a pair of ferromagnetic layers facing each other via an intermediate layer and being able to change reluctance by running current vertically to a film surface, wherein at least one of the ferromagnetic layers includes a ferromagnetic material containing Fe, Co and B. The ferromagnetic material preferably contain FeaCobNicBd (in the formula, a, b, c and d denote atomic %. 5≤a≤45, 35≤b≤85, 0

公开(公告)号：EP1429341A4

公开(公告)日：2007-07-18

申请号：EP02767969

申请日：2002-09-18

申请人： SONY CORP

发明人： BESSHO KAZUHIRO ,  KANO HIROSHI

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/16

摘要： A magnetic memory device having a wiring current density the upper limit of which can be increased without greatly changing the materials and the structure so as to be adapted to higher integration of memory elements constituting the magnetic memory device and to microminiaturization of the wiring. Control is made so that the current for producing a magnetic field is made to flow bidirectionally through the wiring for producing a recording auxiliary magnetic field along the hard magnetization axis in the memory area of a magnetoresistance effect memory device. As a result, the direction in which the current flows is not fixed only to one, and therefore degradation and disconnection due to electromigration hardly occur, the reliability is enhanced, and high density is realized.

公开(公告)号：EP1580821A4

公开(公告)日：2007-02-28

申请号：EP02802009

申请日：2002-10-11

申请人： SONY CORP

发明人： OHBA KAZUHIRO ,  HAYASHI KAZUHIKO ,  KANO HIROSHI ,  BESSHO KAZUHIRO ,  MIZUGUCHI TETSUYA ,  HIGO YUTAKA ,  HOSOMI MASANORI ,  YAMAMOTO TETSUYA ,  NARISAWA HIROAKI ,  SONE TAKEYUKI ,  ENDO KEITARO ,  KUBO SHINYA

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  C23C14/14 ,  H01F10/16 ,  H01L27/105

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C2029/5002 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/302 ,  H01L43/10 ,  H01L43/12

公开(公告)号：EP2172969A4

公开(公告)日：2013-03-13

申请号：EP08790730

申请日：2008-06-30

申请人： SONY CORP

发明人： HOSOMI MASANORI ,  OHMORI HIROYUKI ,  IKARASHI MINORU ,  YAMAMOTO TETSUYA ,  HIGO YUTAKA ,  YAMANE KAZUTAKA ,  OISHI YUKI ,  KANO HIROSHI

IPC分类号： H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

公开(公告)号：EP1526588A4

公开(公告)日：2010-03-24

申请号：EP03766709

申请日：2003-08-01

申请人： SONY CORP

发明人： OBA KAZUHIRO ,  KANO HIROSHI ,  HOSOMI MASANORI ,  BESSHO KAZUHIRO ,  YAMAMOTO TETSUYA ,  MIZUGUCHI TETSUYA

IPC分类号： G01R33/09 ,  G11C11/15 ,  G11C11/16 ,  H01F10/13 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  G11B5/39

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10