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    System and method for direct convective cooling of an exposed integrated circuit die surface
    3.
    发明公开
    System and method for direct convective cooling of an exposed integrated circuit die surface 有权
    装置和方法用于集成电路芯片的暴露表面的直接对流冷却

    公开(公告)号：EP1465252A1

    公开(公告)日：2004-10-06

    申请号：EP04251767.2

    申请日：2004-03-26

    Applicant: STMicroelectronics, Inc.

    Inventor： Siegel, Harry Michael ,  Chiu, Anthong M.

    IPC: H01L23/473 ,  H01L23/367

    CPC classification number: H01L23/473 ,  H01L23/3675 ,  H01L23/4334 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention comprises a lid that is capable of being placed in contact with and attached to an integrated circuit that has an exposed surface of an integrated circuit die. The lid has portions that form a cavity between a surface of the lid and the exposed surface of the integrated circuit die when the lid is placed in contact with the integrated circuit. The lid also has portions that form a first fluid conduit for transporting a fluid into the cavity and a second fluid conduit for transporting the fluid out of the cavity. Heat from the integrated circuit die is absorbed by the fluid by direct convection and removed from the integrated circuit when the fluid is removed from the cavity.

    Abstract translation: 本发明包括一个盖子那样是能够与接触放置并连接到在集成电路也已到露出的集成电路，该集成电路的表面。 所述盖具有部分做了当盖在与集成电路接触放置形成所述盖的一个表面与集成电路的暴露的表面之间的腔体。 因此，该盖具有部分没有形成用于输送流体到腔和用于输送流体从所述腔的第二流体管道的第一流体导管。 热从由所述流体当流体被从腔中取出吸收通过直接对流和去除从所述集成电路的集成电路。

    Scratch resistance improvement by filling metal gaps
    6.
    发明公开
    Scratch resistance improvement by filling metal gaps 审中-公开
    Verbesserung der Kratzfestigkeit durchAuffüllenvonMetallzwischenräumen

    公开(公告)号：EP1073104A2

    公开(公告)日：2001-01-31

    申请号：EP00305837.7

    申请日：2000-07-12

    Applicant: STMicroelectronics, Inc.

    Inventor： Thomas, Danielle A. ,  Siegel, Harry Michael

    IPC: H01L21/3105 ,  H01L23/31

    CPC classification number: G06K9/00053 ,  H01L21/02129 ,  H01L21/02134 ,  H01L21/022 ,  H01L21/3124 ,  H01L23/3192 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

    Abstract: Passivation for capacitive sensor circuits, which overlies the capacitive sensor electrodes and is normally conformal to the electrodes and the underlying interlevel dielectric, is planarized by forming a layer of flowable oxide over the electrodes before forming the passivation. The flowable oxide, which is preferably very thin over the electrodes to minimize loss of sensitivity, provides a substantially planar upper surface, so that passivation formed on the flowable oxide is also substantially planar. Alternatively, a deposited oxide planarized by chemical mechanical polishing may be employed to planarize the surface on which a passivation stack is formed.

    Abstract translation: 通过在形成钝化之前在电极上形成一层可流动的氧化物来平坦化电容式传感器电路的钝化，该电容传感器电路覆盖在电容式传感器电极上并且通常与电极和下面的层间电介质保持一致。 在电极上优选非常薄以使感光度降低最小的可流动氧化物提供基本平坦的上表面，使得形成在可流动氧化物上的钝化也基本上是平面的。 或者，可以采用通过化学机械抛光平坦化的沉积氧化物来平坦化形成钝化层的表面。

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