公开(公告)号：EP0297511A3

公开(公告)日：1991-03-13

申请号：EP88110305.5

申请日：1988-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED

发明人： Sasame, Akira c/o Itami Works of Sumitomo ,  Sakanoue, Hitoyuki c/o Itami works of Sumitomo ,  Tekeuchi, Hisao c/o Itami works of Sumitomo ,  Miyake, Masaya c/o Itami works of Sumitomo ,  Yamakawa, Akira c/o Itami works of Sumitomo ,  Yushio, Yasuhisa c/o Itami works of Sumitomo ,  Akazawa, Hitoshi c/o Itami works of Sumitomo

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/14 ,  H01L23/08 ,  H01L23/10

CPC分类号： H05K3/3405 ,  H01L21/4853 ,  H01L23/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12033 ,  H01L2924/12042 ,  H05K1/0306 ,  H05K3/246 ,  H05K3/3421 ,  H05K2201/0347 ,  H05K2201/1025 ,  H05K2201/1034 ,  H05K2201/10909 ,  H05K2201/10916 ,  Y10T428/12576 ,  H01L2224/45099 ,  H01L2924/00

摘要： A connection structure between lead frames (3) and a base plate (1) of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, comprises the base plate formed of a sintered body of aluminum nitride on which a semiconductor device is to be mounted, the lead frames including, as a main material, iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and silver solder (9) for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is formed of oxygen-free copper of a high plastic deformativity to relieve, by plastic deformation of itself, a thermal stress caused by a difference between a thermal expansion coefficient of the base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame (3) to be joined to the base plate comprises an inner layer portion of iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and an outer layer portion of oxygen-free copper.

公开(公告)号：EP0297511B1

公开(公告)日：2003-10-08

申请号：EP88110305.5

申请日：1988-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED

发明人： Sasame, Akira c/o Itami Works of Sumitomo ,  Sakanoue, Hitoyuki c/o Itami works of Sumitomo ,  Tekeuchi, Hisao c/o Itami works of Sumitomo ,  Miyake, Masaya c/o Itami works of Sumitomo ,  Yamakawa, Akira c/o Itami works of Sumitomo ,  Yushio, Yasuhisa c/o Itami works of Sumitomo ,  Akazawa, Hitoshi c/o Itami works of Sumitomo

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/14 ,  H01L23/08 ,  H01L23/10

CPC分类号： H05K3/3405 ,  H01L21/4853 ,  H01L23/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12033 ,  H01L2924/12042 ,  H05K1/0306 ,  H05K3/246 ,  H05K3/3421 ,  H05K2201/0347 ,  H05K2201/1025 ,  H05K2201/1034 ,  H05K2201/10909 ,  H05K2201/10916 ,  Y10T428/12576 ,  H01L2224/45099 ,  H01L2924/00

公开(公告)号：EP0297511A2

公开(公告)日：1989-01-04

申请号：EP88110305.5

申请日：1988-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED

发明人： Sasame, Akira c/o Itami Works of Sumitomo ,  Sakanoue, Hitoyuki c/o Itami works of Sumitomo ,  Tekeuchi, Hisao c/o Itami works of Sumitomo ,  Miyake, Masaya c/o Itami works of Sumitomo ,  Yamakawa, Akira c/o Itami works of Sumitomo ,  Yushio, Yasuhisa c/o Itami works of Sumitomo ,  Akazawa, Hitoshi c/o Itami works of Sumitomo

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/14 ,  H01L23/08 ,  H01L23/10

CPC分类号： H05K3/3405 ,  H01L21/4853 ,  H01L23/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12033 ,  H01L2924/12042 ,  H05K1/0306 ,  H05K3/246 ,  H05K3/3421 ,  H05K2201/0347 ,  H05K2201/1025 ,  H05K2201/1034 ,  H05K2201/10909 ,  H05K2201/10916 ,  Y10T428/12576 ,  H01L2224/45099 ,  H01L2924/00

摘要： A connection structure between lead frames (3) and a base plate (1) of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, comprises the base plate formed of a sintered body of aluminum nitride on which a semiconductor device is to be mounted, the lead frames including, as a main material, iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and silver solder (9) for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is formed of oxygen-free copper of a high plastic deformativity to relieve, by plastic deformation of itself, a thermal stress caused by a difference between a thermal expansion coefficient of the base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame (3) to be joined to the base plate comprises an inner layer portion of iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and an outer layer portion of oxygen-free copper.

摘要翻译： 引线框架（3）和氮化铝的基板（1）之间的连接结构将被用作半导体装置的部件之间的连接结构，包括由氮化铝烧结体形成的基板，其上形成半导体 要安装的装置，引线框架包括作为主要材料的含有29重量％的镍和17重量％的钴的铁合金和用于连接基板和引线框架的银焊料（9）。 要连接到基板的引线框架的表面由具有高塑性变形性的无氧铜形成，以通过其自身的塑性变形来释放由基板的热膨胀系数之间的差异引起的热应力 以及在焊接时的冷却过程中的引线框架。 优选地，仅接合到基板的每个引线框架（3）的一部分包括含有29重量％的镍和17重量％的钴的铁合金的内层部分， 免费铜。