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    MEMORY CELL
    5.
    发明公开
    MEMORY CELL 有权
    存储器单元

    公开(公告)号：EP1434232A1

    公开(公告)日：2004-06-30

    申请号：EP01274446.2

    申请日：2001-08-13

    申请人： ADVANCED MICRO DEVICES INC.

    发明人： KRIEGER, Juri Heinrich ,  YUDANOV, Nikolay Fedorovich

    IPC分类号： G11C11/21

    CPC分类号： G11C13/0064 ,  B82Y10/00 ,  G11C11/34 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C13/04 ,  G11C2213/11 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/52 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/28 ,  H01L27/285 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0041 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0062 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0094 ,  H01L51/0595

    摘要： The invention is in the field of Computer Engineering and can be used in memory devices for various computers, specifically in developing a universal memory system with high data reading and writing speed along with capabilities for long term storage and high information density, as well as in developing video and audio equipment of a new generation, in developing associative memory systems, and in creating synapses (electric circuit elements with programmable electric resistance) for neuronal nets. The lack of such an element holds back the development of true neuronal computers.
    The invention is based on the task of creating an essentially new kind of memory cell that would allow to store several bits of data, would have fast resistance switching and require low operating voltage but at the same time would allow to combine its manufacturing technology with the modem semiconductor manufacturing technology.
    Fig. 6 shows an implementation option of the claimed memory cell containing two continuous aluminum electrodes 1 and 2 between which there is a multilayer functional zone consisting of one active layer 3, one barrier layer 4 and one passive layer 5. This structure of the functional zone allows to change electric resistance of the active zone and/or form highly conductive areas or lines with metallic conduction in the active zone under the influence of the external electric field and/or its light emission on the memory cell and to retain its electric resistance for long periods of time without applying external electric fields.
    The memory cell is advantageously distinctive from the currently used single bit memory elements, in that it can store several bits of information. The data storage time depends on the memory cell structure, the material used for the functional zone and the writing mode. It can vary from several seconds (can be used to build dynamic memory) to several years (can be used for building long term memory, such as Flash memory). It is possible to create universal memory that can work in both dynamic and long-term modes, depending on the data-writing mode.

    摘要翻译： 本发明属于计算机工程领域，可用于各种计算机的存储器件，尤其用于开发具有高数据读写速度的通用存储器系统以及长期存储和高信息密度的能力，以及 开发新一代视频和音频设备，开发联想记忆系统以及为神经元网络创建突触（可编程电阻的电路元件）。 缺乏这样的元素阻碍了真正的神经计算机的发展。 本发明基于创建基本上新型存储器单元的任务，该存储器单元允许存储数位数据，具有快速电阻切换并且需要低工作电压，但同时允许将其制造技术与 现代半导体制造技术。 图6示出了包含两个连续铝电极1和2的所要求保护的存储器单元的实施选项，在该铝电极之间存在由一个有源层3，一个阻挡层4和一个无源层5组成的多层功能区。功能 区允许改变有源区的电阻和/或在外部电场和/或其在存储器单元上的光发射的影响下在有源区中形成具有金属导电性的高导电性区域或线并且保持其电阻 长时间不使用外部电场。 存储器单元有利地与当前使用的单比特存储器元件不同，因为它可以存储若干比特的信息。 数据存储时间取决于存储单元结构，用于功能区的材料和写入模式。 它可以从几秒（可用于构建动态存储器）到几年（可用于构建长期存储器，如闪存）之间变化。 根据数据写入模式，可以创建可在动态和长期模式下工作的通用存储器。

    STORAGE ELEMENT, STORAGE DEVICE, AND MAGNETIC HEAD
    6.
    发明公开
    STORAGE ELEMENT, STORAGE DEVICE, AND MAGNETIC HEAD 有权
    SPEICHERELEMENT，SPEICHERVORRICHTUNG UND MAGNETKOPF

    公开(公告)号：EP2903020A1

    公开(公告)日：2015-08-05

    申请号：EP13842040.1

    申请日：2013-08-22

    申请人： Sony Corporation

    发明人： UCHIDA, Hiroyuki ,  HOSOMI, Masanori ,  OHMORI, Hiroyuki ,  BESSHO, Kazuhiro ,  HIGO, Yutaka ,  ASAYAMA, Tetsuya ,  YAMANE, Kazutaka

    IPC分类号： H01L21/8246 ,  G11B5/39 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

    CPC分类号： G11C11/161 ,  G11B5/3909 ,  G11C2213/35 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.

    摘要翻译： 提供了一种能够改善TMR特性的存储单元，包括存储单元的存储装置和磁头。 存储单元包括层结构，其包括存储层，其中磁化方向与信息相对应地变化，磁化固定层具有垂直于膜表面的磁化，并且用作存储在存储层中的信息的参考， 以及设置在所述存储层和所述磁化被钉扎层之间并由非磁性体制成的中间层。 将碳插入中间层，并且在层结构的层叠方向上馈送电流允许存储层中的磁化方向改变，以便将信息记录在存储层中。