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1.发明公开Semiconductor device and manufacturing method of the same 审中-公开Halbleiterbauelement和sein Herstellungsverfahren
公开(公告)号：EP1798768A2
公开(公告)日：2007-06-20
申请号：EP06026027.0
申请日：2006-12-15
发明人： Noma, Takashi , Okada, Kazuo , Ishibe, Shinzo , Kitagawa, Katsuhiko , Morita, Yuichi , Otsuka, Shigeki , Yamada, Hiroshi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate (2) is reflected on an output image. A light receiving element (1) (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate (2), and a plurality of ball-shaped conductive terminals (11) is disposed on a back surface of the semiconductor substrate (2). Each of the conductive terminals (11) is electrically connected to a pad electrode (e) on the front surface of the semiconductor substrate (2) through a wiring layer (9). The wiring layers (9) and the conductive terminals (11) are formed on the back surface of the semiconductor substrate (2) except in a region overlapping the light receiving element (1) in a vertical direction, and are not disposed in a region overlapping the light receiving element (1).
摘要翻译： 本发明提供了一种半导体器件，其解决了形成在半导体衬底（2）的背表面上的布线的图案在输出图像上被反射的问题。 在半导体基板（2）的前表面上形成有光接收元件（1）（例如CCD，红外线传感器，CMOS传感器或照明传感器）和多个球形导电端子 11）设置在半导体基板（2）的背面。 每个导电端子（11）通过布线层（9）与半导体衬底（2）的前表面上的焊盘电极（e）电连接。 布线层（9）和导电端子（11）形成在半导体基板（2）的背面上，除了在垂直方向上与光接收元件（1）重叠的区域之外，不布置在区域 与光接收元件（1）重叠。
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2.发明公开Semiconductor device and manufacturing method of the same 审中-公开Halbleiterbauteil undzugehörigeHerstellungsmethode
公开(公告)号：EP1777740A2
公开(公告)日：2007-04-25
申请号：EP06020446.8
申请日：2006-09-28
发明人： Morita, Yuichi , Ishibe, Shinzo , Noma, Takashi , Otsuka, Hisao , Takao, Yukihiro , Kanamori, Hiroshi
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/562 , H01L23/564 , H01L2221/6834 , H01L2224/0392 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/13022 , H01L2224/13024 , H01L2224/16237 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/00014
摘要： The invention prevents a pad electrode (3) for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode (3) connected to the electronic circuit, and a second pad electrode (4) connected to the first pad electrode (3) are formed on a semiconductor substrate (1). A first protection film (5) is formed, covering the first pad electrode (3) and having an opening on the second pad electrode (4) only. A wiring layer (10) is further formed, being connected to the back surface of the first pad electrode (3) through a via hole penetrating the semiconductor substrate (1) and extending from the via hole onto the back surface of the semiconductor substrate (1).
摘要翻译： 本发明防止半导体器件的外部连接的焊盘电极（3）被损坏。 连接到电子电路的电子电路，第一焊盘电极（3）和连接到第一焊盘电极（3）的第二焊盘电极（4）形成在半导体衬底（1）上。 形成第一保护膜（5），仅覆盖第一焊盘电极（3）并且在第二焊盘电极（4）上具有开口。 进一步形成布线层（10），其通过贯穿半导体基板（1）的通路孔与第一焊盘电极（3）的背面连接并从通孔延伸到半导体基板的背面 1）。
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公开(公告)号：EP1734579A3
公开(公告)日：2008-09-03
申请号：EP06012323.9
申请日：2006-06-14
发明人： Morita, Yuichi , Ishibe, Shinzo , Noma, Takashi , Otsuka, Hisao , Takao, Yukihiro , Kanamori, Hiroshi
IPC分类号： H01L23/485
CPC分类号： H01L23/3192 , H01L23/3114 , H01L23/3171 , H01L24/11 , H01L24/12 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05567 , H01L2224/05644 , H01L2224/1132 , H01L2224/1147 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode (4) formed on a semiconductor substrate (1), a first passivation film (5) covering an end portion of the pad electrode (4) and having a first opening (6) on the pad electrode (4), a plating layer (7) formed on the pad electrode (4) in the first opening (6), a second passivation film (9) covering an exposed portion of the pad electrode (4) between an end portion of the first passivation film (5) and the plating layer (7), covering an end portion of the plating layer (7), and having a second opening (10) on the plating layer (7), and a conductive terminal (11) formed on the plating layer (7) in the second opening (10).
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4.发明公开Semiconductor device and manufacturing method of the same 审中-公开Halbleitervorrichtung und Verfahren zu Ihrer Herstellung
公开(公告)号：EP1686622A2
公开(公告)日：2006-08-02
申请号：EP06001902.3
申请日：2006-01-31
IPC分类号： H01L23/31 , H01L23/485
CPC分类号： H01L21/76898 , H01L23/3114 , H01L24/10 , H01L24/13 , H01L27/14636 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05624 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/1434 , H01L2924/15788 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate (1) is etched from its back surface in a position corresponding to a first wiring (3) formed on the semiconductor substrate (1) with a first insulation film (2) therebetween, to form a first opening (7B) exposing the first insulation film (2). Next, the insulation film (2) exposed in the first opening (7B) is etched to form a second opening (8) exposing the first wiring (3), and then the semiconductor substrate (1) is etched to increase a diameter of the first opening (7B) and form a first opening (7B) having the larger diameter. Then, a second insulation film (10) is formed on the back surface of the semiconductor substrate (1) including on the first wiring (3) through the first and second openings (7B, 8), and then the second insulation film (10) covering the first wiring (3) is etched.
摘要翻译： 本发明旨在防止半导体器件的腐蚀。 在本发明的半导体器件的制造方法中，在与半导体衬底（1）上形成的第一配线（3）对应的位置上，从其背面蚀刻半导体衬底（1），其间具有第一绝缘膜（2） 以形成暴露第一绝缘膜（2）的第一开口（7B）。 接下来，对暴露在第一开口（7B）中的绝缘膜（2）进行蚀刻以形成暴露第一布线（3）的第二开口（8），然后蚀刻半导体衬底（1）以增加直径 第一开口（7B）并形成具有较大直径的第一开口（7B）。 然后，通过第一和第二开口（7B，8）在包括第一布线（3）的半导体基板（1）的背面上形成第二绝缘膜（10），然后将第二绝缘膜（10） ）被蚀刻。
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公开(公告)号：EP1798768A3
公开(公告)日：2009-07-08
申请号：EP06026027.0
申请日：2006-12-15
发明人： Noma, Takashi , Okada, Kazuo , Ishibe, Shinzo , Kitagawa, Katsuhiko , Morita, Yuichi , Otsuka, Shigeki , Yamada, Hiroshi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate (2) is reflected on an output image. A light receiving element (1) (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate (2), and a plurality of ball-shaped conductive terminals (11) is disposed on a back surface of the semiconductor substrate (2). Each of the conductive terminals (11) is electrically connected to a pad electrode (e) on the front surface of the semiconductor substrate (2) through a wiring layer (9). The wiring layers (9) and the conductive terminals (11) are formed on the back surface of the semiconductor substrate (2) except in a region overlapping the light receiving element (1) in a vertical direction, and are not disposed in a region overlapping the light receiving element (1).
摘要翻译： 本发明提供了一种半导体器件，其解决了在输出图像上反映在半导体衬底（2）的背表面上形成的布线的图案的问题。 在半导体衬底（2）的前表面上形成光接收元件（1）（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子 11）设置在半导体衬底（2）的后表面上。 每个导电端子（11）通过布线层（9）电连接到半导体衬底（2）的前表面上的焊盘电极（e）。 布线层（9）和导电端子（11）形成在半导体基板（2）的背面，除了在垂直方向上与光接收元件（1）重叠的区域之外，并且不布置在区域 与光接收元件（1）重叠。
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公开(公告)号：EP1777740A3
公开(公告)日：2009-04-01
申请号：EP06020446.8
申请日：2006-09-28
发明人： Morita, Yuichi , Ishibe, Shinzo , Noma, Takashi , Otsuka, Hisao , Takao, Yukihiro , Kanamori, Hiroshi
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/562 , H01L23/564 , H01L2221/6834 , H01L2224/0392 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/13022 , H01L2224/13024 , H01L2224/16237 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/00014
摘要： The invention prevents a pad electrode (3) for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode (3) connected to the electronic circuit, and a second pad electrode (4) connected to the first pad electrode (3) are formed on a semiconductor substrate (1). A first protection film (5) is formed, covering the first pad electrode (3) and having an opening on the second pad electrode (4) only. A wiring layer (10) is further formed, being connected to the back surface of the first pad electrode (3) through a via hole penetrating the semiconductor substrate (1) and extending from the via hole onto the back surface of the semiconductor substrate (1).
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公开(公告)号：EP1734579A2
公开(公告)日：2006-12-20
申请号：EP06012323.9
申请日：2006-06-14
发明人： Morita, Yuichi , Ishibe, Shinzo , Noma, Takashi , Otsuka, Hisao , Takao, Yukihiro , Kanamori, Hiroshi
IPC分类号： H01L23/485
CPC分类号： H01L23/3192 , H01L23/3114 , H01L23/3171 , H01L24/11 , H01L24/12 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05567 , H01L2224/05644 , H01L2224/1132 , H01L2224/1147 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode (4) formed on a semiconductor substrate (1), a first passivation film (5) covering an end portion of the pad electrode (4) and having a first opening (6) on the pad electrode (4), a plating layer (7) formed on the pad electrode (4) in the first opening (6), a second passivation film (9) covering an exposed portion of the pad electrode (4) between an end portion of the first passivation film (5) and the plating layer (7), covering an end portion of the plating layer (7), and having a second opening (10) on the plating layer (7), and a conductive terminal (11) formed on the plating layer (7) in the second opening (10).
摘要翻译： 本发明提供了一种高可靠性的CSP型半导体器件。 该半导体器件包括形成在半导体衬底（1）上的焊盘电极（4），覆盖焊盘电极（4）的端部且在焊盘电极上具有第一开口（6）的第一钝化膜（5） 在所述第一开口部的所述焊盘电极上形成的电镀层;覆盖所述焊盘电极的露出部分的第二钝化膜， 覆盖镀层（7）的端部并且在镀层（7）上具有第二开口（10）的钝化膜（5）和镀层（7），以及形成在其上的导电端子（11） 在第二开口（10）中的镀层（7）。
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公开(公告)号：EP1686622A3
公开(公告)日：2010-05-05
申请号：EP06001902.3
申请日：2006-01-31
IPC分类号： H01L23/31 , H01L23/485 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/3114 , H01L24/10 , H01L24/13 , H01L27/14636 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05624 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/1434 , H01L2924/15788 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate (1) is etched from its back surface in a position corresponding to a first wiring (3) formed on the semiconductor substrate (1) with a first insulation film (2) therebetween, to form a first opening (7B) exposing the first insulation film (2). Next, the insulation film (2) exposed in the first opening (7B) is etched to form a second opening (8) exposing the first wiring (3), and then the semiconductor substrate (1) is etched to increase a diameter of the first opening (7B) and form a first opening (7B) having the larger diameter. Then, a second insulation film (10) is formed on the back surface of the semiconductor substrate (1) including on the first wiring (3) through the first and second openings (7B, 8), and then the second insulation film (10) covering the first wiring (3) is etched.
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公开(公告)号：EP1798769A3
公开(公告)日：2009-07-08
申请号：EP06026088.2
申请日：2006-12-15
发明人： Okada, Kazuo , Kitagawa, Katsuhiko , Noma, Takashi , Otsuka, Shigeki , Yamada, Hiroshi , Ishibe, Shinzo , Morita, Yuichi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203 , H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring (9) formed on a back surface of a semiconductor substrate (2) on an output image. A reflection layer (8) is formed between a light receiving element (1) and a wiring layer (9), that reflects an infrared ray toward a light receiving element (1) the without transmitting it to the wiring layer (9), the infrared ray entering from a light transparent substrate (6) toward the wiring layer (9) through a semiconductor substrate (2). The reflection layer (8) is formed at least in a region under the light receiving element (1) uniformly or only under the light receiving element (1). Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底（2）的背面上的布线（9）的图案的反射问题。 在光接收元件（1）和布线层（9）之间形成反射层（8），其将红外线反射到光接收元件（1）而不将其传输到布线层（9）， 通过半导体基板（2）从透光性基板（6）向布线层（9）进入的红外线。 反射层（8）至少在光接收元件（1）下面的区域内均匀地或仅在光接收元件（1）的下方形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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公开(公告)号：EP1798769A2
公开(公告)日：2007-06-20
申请号：EP06026088.2
申请日：2006-12-15
发明人： Okada, Kazuo , Kitagawa, Katsuhiko , Noma, Takashi , Otsuka, Shigeki , Yamada, Hiroshi , Ishibe, Shinzo , Morita, Yuichi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203 , H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring (9) formed on a back surface of a semiconductor substrate (2) on an output image. A reflection layer (8) is formed between a light receiving element (1) and a wiring layer (9), that reflects an infrared ray toward a light receiving element (1) the without transmitting it to the wiring layer (9), the infrared ray entering from a light transparent substrate (6) toward the wiring layer (9) through a semiconductor substrate (2). The reflection layer (8) is formed at least in a region under the light receiving element (1) uniformly or only under the light receiving element (1). Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供了一种半导体器件，其解决了在输出图像上形成在半导体衬底（2）的背表面上的布线（9）的图案的反射问题。 在光接收元件（1）和布线层（9）之间形成反射层（8），该反射层（8）将红外线朝向光接收元件（1）反射而不将其传输到布线层（9）， （6）通过半导体衬底（2）向布线层（9）入射的红外线。 至少在光接收元件（1）下方的区域中均匀地或仅在光接收元件（1）下方形成反射层（8）。 或者，可以形成具有吸收进入的红外线以防止其透射的功能的抗反射层来代替反射层。
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