摘要:
The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.
摘要:
The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.
摘要:
The proposed system for analysing substances at or close to the surface of an optical sensor comprises at least one waveguiding layer and at least one multi-diffractional grating coupler for the in- and outcoupling of light beams. Into the said coupler are directed at least two light beams at an angle α to each other, and from the coupler at least two light beams emerge at an angle ζ to each other. The system also includes a detection system for capturing the emergent light beams. Light beams enter and emerge from the sensor on the same side, the entry and emergent beams being in different quadrants of the light-incidence plane; the angle α between the entry beams is greater than the angle ζ between the emergent beams. The system can be widely used for determining physical or chemical variables on the basis of the interaction of the guided light waves with the medium at or close to the sensor surface.
摘要:
The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.
摘要:
The invention provides that for each surface of a substrate (2) to be coated, a plasma is injected into a coating reactor (1) used for carrying out microwave PCVD methods, and the surface to be coated is perpendicularly orientated with regard to the direction of spreading of the corresponding plasma. Dielectric compensating elements (4a, b) are introduced into the vicinity of the microwave injection points (3) and correct for non-homogeneities resulting in the distribution of plasma thicknesses by altering the microwave field distribution.
摘要:
The invention relates to a plasma activated CVD method and to a device for producing a microcristalline Si:H layer on a substrate and to the use thereof, especially as a thin film solar cell. The inventive plasma activated CVD method includes the following steps: depositing at least one thin film of amorphous Si:H on the substrate according to the plasma activated CVD method; plasma-treating the amorphous Si:H layer with a hydrogen plasma, whereby said amorphous Si:H layer is converted to a microcristalline Si:H layer and if necessary repeating the two first steps. The inventive plasma activated CVD method is characterised in that the coating step or the treatment is carried out with a constant flow of coating gases or treatment gases and with a pulsed electromagnetic radiation which activates the plasma.
摘要:
The invention relates to a narrow-band optical interference filter for a wavelength (μ0) comprising a plurality of dielectric layers, whereby said dielectric layers alternately have a high (nH) and a low refractive index (nL) and a first number of dielectric layers has an optical layer thickness of μ/4 or μ/2 or an integral multiple thereof. The invention is characterized in that a second number of layers in the layer system has an optical layer thickness differing from μ/4 and μ/2 resulting in a minimized overall layer.