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1.发明授权Method of transferring an object and method of manufacturing a semiconductor device 有权一种用于传送一个对象和方法，用于制造半导体器件的方法
公开(公告)号：EP1363319B1
公开(公告)日：2009-01-07
申请号：EP03010502.7
申请日：2003-05-09
发明人： Takayama, Toru , Goto, Yuugo , Maruyama, Junya , Ohno, Yumiko
IPC分类号： H01L21/20 , H01L21/762 , H01L21/68
CPC分类号： H01L21/76251 , H01L21/2007 , H01L2221/68368 , Y10T428/14
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公开(公告)号：EP1528594A3
公开(公告)日：2006-06-28
申请号：EP04024864.3
申请日：2004-10-19
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译： 本发明的目的是提供一种剥离方法，其不损害剥离层，并且不仅剥离具有小尺寸区域的剥离层，而且还剥离具有大尺寸面积的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在玻璃基板上划线或者执行激光照射来去除玻璃基板的一部分，从而提供触发。 然后，通过从去除部分进行剥离，以优选的收率进行剥离。 另外，通过用树脂覆盖除端子电极的连接部分（包括端子电极的外围区域）之外的整个面来防止裂缝。
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公开(公告)号：EP1453086A3
公开(公告)日：2006-03-08
申请号：EP04004369.7
申请日：2004-02-26
发明人： Imai, Keitaro , Takayama, Toru , Goto, Yuugo , Maruyama, Junya , Ohno, Yumiko
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675 , H01L2221/6835 , H01L2221/68368
摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.
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公开(公告)号：EP1528594A2
公开(公告)日：2005-05-04
申请号：EP04024864.3
申请日：2004-10-19
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译： 本发明的目的是提供一种不损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后，通过从去除部分剥离而以优选的收率进行剥离。 此外，通过用树脂覆盖除了端子电极（包括端子电极的周边区域）的连接部分之外的整个表面来防止裂纹。
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5.发明公开Ultrathin integrated circuit: manufacture and application as label 审中-公开UltradünnIntegrierter Schaltkreis：Anwendung als Etikett und Herstellung
公开(公告)号：EP1453088A2
公开(公告)日：2004-09-01
申请号：EP04004083.4
申请日：2004-02-23
发明人： Arai, Yasuyuki , Ishikawa, Akira , Takayama, Toru , Maruyama, Junya , Goto, Yuugo , Ohno, Yumiko , Tachimura, Yuko
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
摘要翻译： 本发明提供一种超薄薄膜集成电路和包括薄膜集成电路器件的薄膜集成电路器件。 因此，产品的设计不会被损坏，而由硅晶片形成的集成电路是厚的并且在产品容器的表面上产生不规则性。 根据本发明的薄膜集成电路不同于由常规硅晶片形成的集成电路，包括半导体膜作为有源区（例如，薄膜晶体管中的沟道区）。 根据本发明的薄膜集成电路足够薄，即使当诸如卡或容器的产品配备有薄膜集成电路时，该设计也不会损坏。
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6.发明公开IC card and booking-account system using the IC card 有权Chipkarte und diese Chipkarte verendendes Kontensystem
公开(公告)号：EP1437695A2
公开(公告)日：2004-07-14
申请号：EP03029235.3
申请日：2003-12-18
发明人： Takayama, Toru , Maruyama, Junya , Goto, Yuugo , Ohno, Yumiko , Akiba, Mai
IPC分类号： G07F7/10 , G06K19/067
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译： 本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路装配在同一印刷电路板上; IC卡的厚度为0.05mm〜1mm。
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公开(公告)号：EP2259300A3
公开(公告)日：2017-08-16
申请号：EP10176959.4
申请日：2004-10-19
IPC分类号： H01L21/762 , H01L21/84
摘要： A method for manufacturing a semiconductor device, comprising the steps of: forming a peeling layer containing an element and a terminal electrode over a first substrate; peeling the peeling layer and the terminal electrode from the first substrate; pasting a second substrate to the peeling layer and the terminal electrode with an adhesive material; and pressure-bonding an FPC to the terminal electrode in which a circumference is covered with a protective layer.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在第一衬底上形成含有元件和端电极的剥离层; 从第一基板剥离剥离层和端子电极; 用粘合材料将第二衬底粘贴到剥离层和端子电极上; 并将FPC压接到其周围被保护层覆盖的端子电极。
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8.发明授权
公开(公告)号：EP1426813B1
公开(公告)日：2013-08-21
申请号：EP03026735.5
申请日：2003-11-21
IPC分类号： G02F1/1362 , H01L21/84 , H01L27/12 , H05B33/12
CPC分类号： H01L27/1266 , G02F1/1362 , H01L21/0212 , H01L21/022 , H01L21/3127 , H01L27/1214 , H01L27/14683 , H01L27/3244 , H01L51/003 , H01L51/5253 , H01L51/56 , H01L2227/326 , H01L2251/5338 , H05B33/04
摘要： A semiconductor device that has the structure that is capable of preventing moisture, oxygen, or the like, from outside from penetrating, in addition to the structure that is being thin, lightweight, flexible and having a curbed surface. In the present invention, the structure that is thin, lightweight, flexible, and that has a curved surface, moreover, that is capable of preventing moisture, oxygen, or the like, from outside from penetrating is realized by means that a structure is formed in which a device formation layer is covered by a fluoroplastic film and by means that TFTs included in a device formation layer is formed of an island-like semiconductor film.
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公开(公告)号：EP2256807A2
公开(公告)日：2010-12-01
申请号：EP10009803.7
申请日：2003-12-19
发明人： Nishi, Kazuo , Takayama, Toru , Goto, Yuugo
IPC分类号： H01L27/12 , H01L21/84 , H01L21/336 , H01L29/786 , H01L21/20 , H01L27/146
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1255 , H01L27/1446 , H01L29/66757 , H01L29/78675 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599
摘要： The present invention is characterized by forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal oxide film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the first adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
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10.发明公开
公开(公告)号：EP1426813A3
公开(公告)日：2008-06-04
申请号：EP03026735.5
申请日：2003-11-21
IPC分类号： G02F1/1362 , H01L21/84 , H01L27/12 , H05B33/12
CPC分类号： H01L27/1266 , G02F1/1362 , H01L21/0212 , H01L21/022 , H01L21/3127 , H01L27/1214 , H01L27/14683 , H01L27/3244 , H01L51/003 , H01L51/5253 , H01L51/56 , H01L2227/326 , H01L2251/5338 , H05B33/04
摘要： A semiconductor device that has the structure that is capable of preventing moisture, oxygen, or the like, from outside from penetrating, in addition to the structure that is being thin, lightweight, flexible and having a curbed surface. In the present invention, the structure that is thin, lightweight, flexible, and that has a curved surface, moreover, that is capable of preventing moisture, oxygen, or the like, from outside from penetrating is realized by means that a structure is formed in which a device formation layer is covered by a fluoroplastic film and by means that TFTs included in a device formation layer is formed of an island-like semiconductor film.
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