公开(公告)号：EP2507822A1

公开(公告)日：2012-10-10

申请号：EP10834485.4

申请日：2010-11-11

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： YAMAZAKI, Shunpei ,  SAKATA, Junichiro ,  OHARA, Hiroki

IPC: H01L21/336 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L29/786

CPC classification number: H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：EP2507823B1

公开(公告)日：2018-09-26

申请号：EP10834489.6

申请日：2010-11-15

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： YAMAZAKI, Shunpei ,  SAKATA, Junichiro ,  OHARA, Hiroki

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/78 ,  H01L21/20 ,  H01L21/324 ,  H01L21/28 ,  G02F1/1368 ,  H01L29/49

CPC classification number: H01L29/7831 ,  H01L21/28176 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：EP2452362B1

公开(公告)日：2017-09-06

申请号：EP10797035.2

申请日：2010-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： YAMAZAKI, Shunpei ,  HOSOBA, Miyuki ,  NODA, Kosei ,  OHARA, Hiroki ,  SASAKI, Toshinari ,  SAKATA, Junichiro

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

公开(公告)号：EP2507823A1

公开(公告)日：2012-10-10

申请号：EP10834489.6

申请日：2010-11-15

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： YAMAZAKI, Shunpei ,  SAKATA, Junichiro ,  OHARA, Hiroki

IPC: H01L21/336 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L29/786

CPC classification number: H01L29/7831 ,  H01L21/28176 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Abstract translation: 一种高功率应用的半导体器件，其中提供了具有高批量生产率的新型半导体材料。 形成氧化物半导体膜，然后，对露出的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的诸如湿气或氢的杂质。 接着，为了进一步减少氧化物半导体膜中的水分或氢等杂质，通过离子注入法，离子掺杂法等向氧化物半导体膜中添加氧，然后进行第二热处理 在暴露的氧化物半导体膜上进行。

公开(公告)号：EP2449595B1

公开(公告)日：2017-07-26

申请号：EP10794049.6

申请日：2010-06-17

Applicant: Semiconductor Energy Laboratory Co, Ltd.

Inventor： SASAKI, Toshinari ,  SAKATA, Junichiro ,  OHARA, Hiroki ,  YAMAZAKI, Shunpei

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: The invention is directed to a method for manufacturing a semiconductor device comprising the steps of: forming a first oxide semiconductor film over a substrate having an insulating surface; forming a second oxide semiconductor film over the first oxide semiconductor film; heating the first oxide semiconductor film and the second oxide semiconductor film; after the heating, cooling the first oxide semiconductor film and the second oxide semiconductor film in an atmosphere containing oxygen; forming a conductive film over the first oxide semiconductor film and the second oxide semiconductor film; selectively etching the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film to form from the first oxide semiconductor film a semiconductor layer including a channel formation region, from the second oxide semiconductor film a source region and a drain region, and from the conductive film a source electrode layer and a drain electrode layer; and forming an oxide insulating film which is in contact with part of the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer; wherein heating is performed for dehydration or dehydrogenation of the first oxide semiconductor film and the second oxide semiconductor film; wherein cooling is performed at a temperature higher than or equal to room temperature and lower than 100 °C; and wherein by forming the oxide insulating film in contact with part of the semiconductor layer, the carrier density of the semiconductor layer is reduced.

Abstract translation: 目的是提供包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。 另一个目的是以较低的成本和高生产率制造高度可靠的半导体器件。 在用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层的薄膜晶体管的半导体装置的制造方法中，进行热处理（脱水或脱氢热处理） 以提高氧化物半导体层的纯度并减少水分等杂质。 而且，经受热处理的氧化物半导体层在氧气氛下缓慢冷却。

公开(公告)号：EP2507822B1

公开(公告)日：2016-08-31

申请号：EP10834485.4

申请日：2010-11-11

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： YAMAZAKI, Shunpei ,  SAKATA, Junichiro ,  OHARA, Hiroki

IPC: H01L21/02 ,  H01L21/465 ,  H01L21/477 ,  H01L29/786 ,  H01L29/04 ,  H01L29/66 ,  H01L21/324 ,  H01L21/28

CPC classification number: H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Abstract translation: 一种用于高功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在曝光的氧化物半导体膜上进行。

公开(公告)号：EP2478554B1

公开(公告)日：2016-06-08

申请号：EP10817049.9

申请日：2010-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： YAMAZAKI, Shunpei ,  SAKAKURA, Masayuki ,  WATANABE, Ryosuke ,  SAKATA, Junichiro ,  AKIMOTO, Kengo ,  MIYANAGA, Akiharu ,  HIROHASHI, Takuya ,  KISHIDA, Hideyuki

IPC: G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: The invention provides a transistor comprising a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; and an oxide insulating layer over and in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer includes indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt and tin; and wherein a region of the oxide semiconductor layer is formed of microcrystals c-axis-oriented in a direction perpendicular to a surface of the oxide semiconductor layer.

公开(公告)号：EP2494601A1

公开(公告)日：2012-09-05

申请号：EP10826518.2

申请日：2010-10-06

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： YAMAZAKI, Shunpei ,  MIYANAGA, Akiharu ,  TAKAHASHI, Masahiro ,  KISHIDA, Hideyuki ,  SAKATA, Junichiro

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L51/50

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

Abstract translation: 目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧 - 过量混合区域或氧过量氧化物绝缘层插入其间的氧化物半导体层之上形成以悬空键为代表的具有许多缺陷的绝缘层，由此氧化物半导体层中的杂质例如氢或水分（a 氢原子或包含氢原子的化合物如H 2 O）通过氧过量混合区或氧过量氧化物绝缘层并扩散到绝缘层中。 由此，氧化物半导体层的杂质浓度降低。

公开(公告)号：EP2449594A1

公开(公告)日：2012-05-09

申请号：EP10794048.8

申请日：2010-06-16

Applicant: Semiconductor Energy Laboratory Co, Ltd.

Inventor： SASAKI, Toshinari ,  SAKATA, Junichiro ,  OHARA, Hiroki ,  YAMAZAKI, Shunpei

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

Abstract translation: 目的是提供包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。 在用于制造包括其中将氧化物半导体膜用于包括沟道形成区的半导体层的薄膜晶体管的半导体器件的方法中，执行热处理（其用于脱水或脱氢）以提高 氧化物半导体膜并减少水分等杂质。 除氧化物半导体膜中存在的湿气等杂质外，热处理还会降低存在于栅极绝缘层中的杂质如氧化物半导体膜之上和之下的氧化物半导体膜与膜之间的界面中的杂质， 与氧化物半导体膜接触。

公开(公告)号：EP2481089A1

公开(公告)日：2012-08-01

申请号：EP10818725.3

申请日：2010-09-08

Applicant: Semiconductor Energy Laboratory Co, Ltd.

Inventor： MIYANAGA, Akiharu ,  SAKATA, Junichiro ,  SAKAKURA, Masayuki ,  YAMAZAKI, Shunpei

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.

Abstract translation: 目的在于提供具有良好的电特性和高可靠性的薄膜晶体管以及包括该薄膜晶体管作为开关元件的半导体器件。 具有显示电子衍射图案的孵育状态的In-Ga-Zn-O基膜，其与出现晕圈形状图案的常规已知非晶态不同，并且从光点明显出现的传统已知晶态， 形成了。 具有温育状态的In-Ga-Zn-O基膜用于沟道蚀刻薄膜晶体管的沟道形成区。