-
公开(公告)号：EP2765612A4
公开(公告)日：2015-07-22
申请号：EP12829607
申请日：2012-09-07
发明人： SASAKI KOHEI , HIGASHIWAKI MASATAKA
IPC分类号： H01L29/786 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/338 , H01L29/24 , H01L29/26 , H01L29/772 , H01L29/78 , H01L29/812
CPC分类号： H01L29/7869 , H01L21/02414 , H01L21/02433 , H01L21/02565 , H01L21/02576 , H01L21/02581 , H01L21/02631 , H01L29/04 , H01L29/045 , H01L29/157 , H01L29/24 , H01L29/36 , H01L29/365 , H01L29/41733 , H01L29/66969 , H01L29/772 , H01L29/78 , H01L29/7816 , H01L29/7824 , H01L29/78603 , H01L29/812 , H01L29/8126
-
公开(公告)号：EP2765610A4
公开(公告)日：2015-05-06
申请号：EP12830340
申请日：2012-09-07
发明人： SASAKI KOHEI , HIGASHIWAKI MASATAKA
CPC分类号： H01L29/24 , H01L21/02414 , H01L21/02433 , H01L21/02483 , H01L21/02565 , H01L21/02576 , H01L21/02581 , H01L21/02631 , H01L21/02634 , H01L29/045 , H01L29/36 , H01L29/365 , H01L29/41741 , H01L29/4236 , H01L29/66712 , H01L29/66734 , H01L29/66969 , H01L29/78 , H01L29/7802 , H01L29/7813 , H01L29/7827
摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.
-
搜索结果
2 条记录 (耗时 0.009 秒)
