公开(公告)号：EP2765612A4

公开(公告)日：2015-07-22

申请号：EP12829607

申请日：2012-09-07

申请人： TAMURA SEISAKUSHO KK ,  NAT INST INF & COMM TECH

发明人： SASAKI KOHEI ,  HIGASHIWAKI MASATAKA

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L29/24 ,  H01L29/26 ,  H01L29/772 ,  H01L29/78 ,  H01L29/812

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

公开(公告)号：EP2765610A4

公开(公告)日：2015-05-06

申请号：EP12830340

申请日：2012-09-07

申请人： TAMURA SEISAKUSHO KK ,  NAT INST INF & COMM TECH

发明人： SASAKI KOHEI ,  HIGASHIWAKI MASATAKA

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04 ,  H01L29/24 ,  H01L29/36

CPC分类号： H01L29/24 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

公开(公告)号：EP3178972A4

公开(公告)日：2018-05-02

申请号：EP15829189

申请日：2015-08-06

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： C30B29/16

CPC分类号： C30B29/16

摘要： Provided is a Ga 2 O 3 -based single crystal substrate capable of achieving a high processing yield. A Ga 2 O 3 -based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.

公开(公告)号：EP2754736A4

公开(公告)日：2015-06-24

申请号：EP12829563

申请日：2012-08-02

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： H01L21/363 ,  C30B23/02 ,  C30B29/16 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L21/02609 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/16 ,  C30B29/22 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02661 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/872

公开(公告)号：EP2754738A4

公开(公告)日：2015-02-25

申请号：EP12830660

申请日：2012-08-06

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： C30B29/16 ,  C30B29/20 ,  H01L21/36

CPC分类号： H01L29/24 ,  C30B13/00 ,  C30B15/34 ,  C30B23/066 ,  C30B29/16 ,  C30B29/22 ,  C30B29/68 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045

摘要： Provided is a substrate for epitaxial growth, which enables the improvement in quality of a Ga-containing oxide layer that is formed on a ²-Ga 2 O 3 single-crystal substrate. A substrate (1) for epitaxial growth comprises ²-Ga 2 O 3 single crystals, wherein face (010) of the single crystals or a face that is inclined at an angle equal to or smaller than 37.5° with respect to the face (010) is the major face. A crystal laminate structure (2) comprises: the substrate (1) for epitaxial growth; and epitaxial crystals (20) which are formed on the major face (10) of the substrate (1) for epitaxial growth and each of which comprises a Ga-containing oxide.

摘要翻译： 提供了一种用于外延生长的衬底，其能够提高形成在2-Ga 2 O 3单晶衬底上的含Ga氧化物层的质量。 用于外延生长的衬底（1）包括2-Ga 2 O 3单晶，其中单晶的面（010）或相对于面（010）以等于或小于37.5°的角度倾斜的面 ）是主要的面孔。 晶体层压结构（2）包括：用于外延生长的衬底（1）; 和外延晶体（20），其形成在用于外延生长的基板（1）的主面（10）上，并且每个包括含Ga氧化物。

公开(公告)号：EP3054037A4

公开(公告)日：2017-06-21

申请号：EP14849461

申请日：2014-09-18

申请人： TAMURA SEISAKUSHO KK ,  NAT UNIV CORP TOKYO UNIV OF AGRICULTURE AND TECH

发明人： GOTO KEN ,  SASAKI KOHEI ,  KOUKITU AKINORI ,  KUMAGAI YOSHINAO ,  MURAKAMI HISASHI

IPC分类号： H01L21/365 ,  C23C16/40 ,  C23C16/448 ,  C30B25/16 ,  C30B29/16

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： Provided are: a method for efficiently growing a high-quality, large diameter ²-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a ²-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a ²-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a ²-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.

摘要翻译： 提供了：一种有效地生长高质量，大直径的基于Ga 2 O 3的单晶膜的方法; 以及使用该生长方法生长的具有基于Ga 2 O 3的单晶膜的结晶层状结构。 作为一个实施例，本发明提供了一种通过使用HVPE法生长基于Ga 2 O 3的单晶膜的方法，并且包括将Ga 2 O 3基衬底（10）暴露于镓 氯化物气体和含氧气体，并且在Ga 2 O 3基衬底（10）的主表面（11）上在生长温度下生长基于Ga 2 O 3的单晶膜（12） 900°C或更高。

公开(公告)号：EP2800128A4

公开(公告)日：2015-02-25

申请号：EP12854328

申请日：2012-11-27

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B29/16 ,  H01L21/02

CPC分类号： C30B23/066 ,  C30B23/005 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02631

摘要： A Ga 2 O 3 crystal film is epitaxially grown on a Ga 2 O 3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga 2 O 3 crystal film, wherein a conductive Ga 2 O 3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga 2 O 3 crystal film comprises a step wherein a Ga 2 O 3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga 2 O 3 crystal substrate as molecular beams. The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus.

摘要翻译： 使用MBE法在Ga 2 O 3晶体基板上外延生长Ga 2 O 3晶体膜，同时以高精度控制n型导电性。 提供一种制造Ga 2 O 3晶体膜的方法，其中通过使用MBE方法的外延生长形成导电Ga 2 O 3晶体膜。 制造Ga 2 O 3晶体膜的方法包括通过制造Ga蒸气和Sn蒸气来生长含有Sn的Ga 2 O 3单晶膜并将Ga蒸气和Sn蒸气供给到 Ga 2 O 3晶体衬底作为分子束。 通过加热填充在MBE装置的电池中的Sn氧化物来制造Sn蒸气。

公开(公告)号：EP2982781A4

公开(公告)日：2016-11-16

申请号：EP14760498

申请日：2014-02-26

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： C30B29/16 ,  C30B13/10 ,  C30B13/24

CPC分类号： C30B13/10 ,  C30B13/24 ,  C30B13/30 ,  C30B13/32 ,  C30B29/16

公开(公告)号：EP2755231A4

公开(公告)日：2015-04-08

申请号：EP12829259

申请日：2012-08-02

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： H01L21/425 ,  H01L29/24

CPC分类号： H01L29/24 ,  H01L21/425 ,  H01L29/0692 ,  H01L29/36

摘要： A method for controlling the concentration of a donor in a Ga 2 O 3 -based single crystal using the ion implantation process is provided with which it is possible to form a highly electrically conductive region in a Ga 2 O 3 -based single crystal. The method comprises: a step in which a Group IV element is implanted as a donor impurity in a Ga 2 O 3 -based single crystal (1) by the ion implantation process to form, in the Ga 2 O 3 -based single crystal (1), a donor impurity implantation region (3) that has a higher concentration of the Group IV element than the region in which the Group IV element has not been implanted; and a step in which annealing at 800 C or higher is conducted to activate the Group IV element present in the donor impurity implantation region (3) and thereby form a high-donor-concentration region. Thus, the donor concentration in the Ga 2 O 3 -based single crystal (1) is controlled.