公开(公告)号：EP2854160B1

公开(公告)日：2020-04-08

申请号：EP13794483.1

申请日：2013-04-16

申请人： Tokyo Electron Limited

发明人： NISHIMURA Eiichi ,  SHIMIZU Akitaka ,  YAMASHITA Fumiko ,  URAYAMA Daisuke

IPC分类号： H01L21/3065 ,  H01J37/32

公开(公告)号：EP2975633A1

公开(公告)日：2016-01-20

申请号：EP14785929.2

申请日：2014-04-09

申请人： Tokyo Electron Limited

发明人： MORIKITA Shinya ,  NISHIMURA Eiichi ,  YAMASHITA Fumiko

IPC分类号： H01L21/3065 ,  H01L21/027 ,  H05H1/46

CPC分类号： H01L21/31133 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02118 ,  H01L21/02351 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/31144

摘要： A pattern is formed on an underlying layer of a target object by a pattern forming method. The pattern forming method includes (a) forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; (b) processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; (c) etching the second region partway in a thickness direction of the second region in a capacitively coupled plasma processing apparatus after the processing of the target object; (d) generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and (e) additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons onto the target object.

摘要翻译： 通过图案形成方法在目标物体的下层上形成图案。 该图案形成方法包括：（a）在底层上形成包括第一聚合物和第二聚合物并被配置为自组装的嵌段共聚物层; （b）在所述嵌段共聚物层中处理所述目标物以形成包含所述第一聚合物的第一区域和包含所述第二聚合物的第二区域; （c）在目标物体的处理之后，在电容耦合等离子体处理装置中在第二区域的厚度方向的中途蚀刻第二区域; （d）在蚀刻所述第二区域之后，通过向所述上电极施加负DC电压并将所述二次电子照射到所述目标物体上从所述等离子体处理装置的上电极产生二次电子; 和（e）在将二次电子照射到目标物体上之后，另外蚀刻等离子体处理装置中的第二区域。

公开(公告)号：EP2975633B1

公开(公告)日：2019-09-11

申请号：EP14785929.2

申请日：2014-04-09

申请人： Tokyo Electron Limited

发明人： MORIKITA Shinya ,  NISHIMURA Eiichi ,  YAMASHITA Fumiko

IPC分类号： H01L21/311 ,  H01L21/027

公开(公告)号：EP3073518A1

公开(公告)日：2016-09-28

申请号：EP14863512.1

申请日：2014-09-19

申请人： Tokyo Electron Limited

发明人： HASHIMOTO Mitsuru ,  SONE Takashi ,  NISHIMURA Eiichi ,  SHIMODA Keiichi

IPC分类号： H01L21/3065 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.

摘要翻译： 提供了蚀刻工件的蚀刻目标层的方法。 工件在蚀刻目标层上具有掩模。 蚀刻目标层和掩模由各自的原料数量大于氩原子数的稀有气体的等离子体的蚀刻效率高于氩气等离子体的材料的蚀刻效率的材料形成。 掩模由熔点高于蚀刻目标层的材料形成。 该方法包括（a）将工件暴露于含有原子序数大于氩原子数的第一稀有气体的第一工艺气体的等离子体，和（b）将工件暴露于含有 具有原子序数小于氩原子数的第二稀有气体。

公开(公告)号：EP2854160A1

公开(公告)日：2015-04-01

申请号：EP13794483.1

申请日：2013-04-16

申请人： Tokyo Electron Limited

发明人： NISHIMURA Eiichi ,  SHIMIZU Akitaka ,  YAMASHITA Fumiko ,  URAYAMA Daisuke

IPC分类号： H01L21/3065 ,  H01J37/32

摘要： An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

摘要翻译： 一种处理反应产物的处理装置，其特征在于，在被处理对象物中包含的蚀刻对象膜被蚀刻时， 隔板 等离子体源 安装台; 第一处理气体供应单元; 第二处理气体供应单元。 处理室限定空间，并且分隔板布置在处理室内，并且将空间分成等离子体产生空间和基板处理空间，同时抑制离子的渗透和真空紫外线。 等离子体源在等离子体形成空间中产生等离子体。 安装台布置在基板处理空间中以将目标物体安装在其上。