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    POLYIMIDES
    7.
    发明公开
    POLYIMIDES 审中-公开

    公开(公告)号：EP3417000A1

    公开(公告)日：2018-12-26

    申请号：EP17868411.4

    申请日：2017-10-26

    申请人： FUJIFILM Electronic Materials U.S.A, Inc.

    发明人： MALIK, Sanjay ,  REINERTH, William A. ,  DE, Binod B. ,  SAKAMURI, Raj ,  DIMOV, Ognian N. ,  NAIINI, Ahmad A.

    IPC分类号： C08G69/32 ,  C08L79/08 ,  C09D179/08

    摘要： This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (I) Structure (I) (b) at least one tetracarboxylic acid dianhydride, and optionally (c) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formula is defined in the specification.

    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES
    8.
    发明公开
    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES 审中-公开
    用于从半导体基材去除光刻胶的剥离组合物

    公开(公告)号：EP3249470A1

    公开(公告)日：2017-11-29

    申请号：EP17172498.2

    申请日：2017-05-23

    申请人： FUJIFILM Electronic Materials U.S.A, Inc.

    发明人： SUGISHIMA, Yasuo ,  MIZUTANI, Atsushi ,  WOJTCZAK, William A.

    IPC分类号： G03F7/42 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D7/10

    CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/43 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31111 ,  H01L21/31133

    摘要： This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

    摘要翻译： 本公开涉及包含1）至少一种水溶性极性非质子有机溶剂的组合物; 2）至少一种季铵氢氧化物; 3）至少一种包含至少三个羟基的化合物; 4）至少一种羧酸; 5）至少一种II族金属阳离子; 6）至少一种选自6-取代-2,4-二氨基-1,3,5-三嗪的铜腐蚀抑制剂; 和7）水。 该组合物可以有效地剥去正或负色调抗蚀剂或抗蚀剂残留物，并且对凸块和下面的金属化材料（例如SnAg，CuNiSn，CuCoCu，CoSn，Ni，Cu，Al，W，Sn，Co和 等等）在半导体衬底上。