Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process, - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210) - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210); - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and - etching the exposed parts of the first layer using the third layer (240) as a protective layer.
Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process, - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210) - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210); - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and - etching the exposed parts of the first layer using the third layer (240) as a protective layer.
Abstract:
The invention relates to a device, especially for patch-clamping vesicles and/or for dispensing small, defined liquid amounts onto surfaces. The device is characterized in that in a substrate (2) at least one pipette in the form of a through hole (8) with a predetermined diameter is produced, a rim (16) of the through hole (8) protruding from a neighboring surface (4) of the substrate (2) by a predetermined length. The invention further relates to a method for producing the device, comprising the following steps: producing at least one hole (8), forming at least one modified surface layer (12) on at least the inner surfaces of the hole (8), selectively removing the substrate (2), the modified surface layer (12) not being substantially affected so that it protrudes from a surface (4) of the substrate and forms a protruding rim (16), and finishing the hole (8) as a through hole in a suitable process step.
Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), - depositing a second layer of material (240) on the base material in the cavity (280), and - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.
Abstract:
The present invention relates to a method of manufacturing a probe comprising a cantilever with a conduit. According to the invention, an etchant window is provided in a layer covering an elongated sacrificial conduit core that is to form the conduit. This allows for an etching process where the elongated sacrificial conduit core is etched away before all material of a substrate is etched away, the remaining material of the substrate material making the probe stronger without being in the way during use of the probe.
Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process, - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210) - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210); - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and - etching the exposed parts of the first layer using the third layer (240) as a protective layer.
Abstract:
The invention relates to a device, especially for patch-clamping vesicles and/or for dispensing small, defined liquid amounts onto surfaces. The device is characterized in that in a substrate (2) at least one pipette in the form of a through hole (8) with a predetermined diameter is produced, a rim (16) of the through hole (8) protruding from a neighboring surface (4) of the substrate (2) by a predetermined length. The invention further relates to a method for producing the device, comprising the following steps: producing at least one hole (8), forming at least one modified surface layer (12) on at least the inner surfaces of the hole (8), selectively removing the substrate (2), the modified surface layer (12) not being substantially affected so that it protrudes from a surface (4) of the substrate and forms a protruding rim (16), and finishing the hole (8) as a through hole in a suitable process step.
Abstract:
A method of manufacturing a plurality of through-holes (132) in a layer (250) of first material (220) by subjecting part of the layer (250) of said first material (220) to ion beam milling. For batch-wise production, the method comprises - after a step of providing the layer (250) of first material (220) and before the step of ion beam milling, providing a second layer (250) of a second material (230) on the layer (250) of first material (220), - providing the second layer (250) of the second material (230) with a plurality of holes, the holes being provided at central locations of pits (210) in the first layer (250), and - subjecting the second layer (250) of the second material (230) to said step of ion beam milling at an angle using said second layer (250) of the second material (230) as a shadow mask.