公开(公告)号：EP2545196B1

公开(公告)日：2019-06-26

申请号：EP11723860.0

申请日：2011-03-03

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian

IPC分类号： C23C16/04 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  G01J3/443

公开(公告)号：EP1677835B1

公开(公告)日：2010-01-27

申请号：EP04789964.6

申请日：2004-10-12

申请人： KHS Corpoplast GmbH & Co. KG

发明人： SIEBELS, Sönke

IPC分类号： A61L2/14 ,  C23C14/56 ,  F04B7/00 ,  F16K11/076

CPC分类号： A61L2/14 ,  B29C49/36 ,  B29C49/42 ,  B29C51/22 ,  B29C51/26 ,  B29C2791/006 ,  C23C14/56 ,  C23C16/4412 ,  F04B7/0046

公开(公告)号：EP2721192A1

公开(公告)日：2014-04-23

申请号：EP12731299.9

申请日：2012-06-15

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  HERBORT, Michael

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/511 ,  C23C16/515

CPC分类号： B65D25/14 ,  B65D25/34 ,  C23C16/045 ,  C23C16/401 ,  C23C16/511 ,  C23C16/515 ,  Y10T428/1379

摘要： The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station. The plasma chamber is bounded by a chamber base, a chamber cover and a lateral chamber wall. The plasma treatment causes a coating to be deposited on the workpiece. The plasma is ignited by microwave energy. The coating consists at least of a gas barrier layer and a bonding layer arranged between the workpiece and the gas barrier layer. The gas barrier layer contains SiOx and the bonding layer contains carbon. The gas barrier layer is produced from a gas that contains at least one silicon compound and argon.

摘要翻译： 该方法用于容器状工件的等离子体处理。 工件被插入到处理台的至少部分可抽空的室中。 等离子体室由腔室基座，腔室盖和侧壁室限定。 等离子体处理导致涂层沉积在工件上。 等离子体被微波能量点燃。 该涂层至少包括阻气层和布置在工件和阻气层之间的粘合层。 阻气层含有SiO x，结合层含有碳。 阻气层由含有至少一种硅化合物和氩的气体制成。

公开(公告)号：EP2721192B1

公开(公告)日：2017-10-04

申请号：EP12731299.9

申请日：2012-06-15

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  HERBORT, Michael

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/511 ,  C23C16/515

CPC分类号： B65D25/14 ,  B65D25/34 ,  C23C16/045 ,  C23C16/401 ,  C23C16/511 ,  C23C16/515 ,  Y10T428/1379

公开(公告)号：EP2545196A1

公开(公告)日：2013-01-16

申请号：EP11723860.0

申请日：2011-03-03

申请人： KHS Corpoplast GmbH & Co. KG

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian

IPC分类号： C23C16/04 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  G01J3/443

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/511 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/443 ,  G01N21/68 ,  H01J37/32192 ,  H01J37/32779 ,  H01J37/32935

摘要： The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

公开(公告)号：EP2198447A2

公开(公告)日：2010-06-23

申请号：EP08801174.7

申请日：2008-08-14

申请人： KHS Corpoplast GmbH & Co. KG

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian ,  MÜLLER, Hartwig ,  TIETZ, Felix

IPC分类号： H01J37/32 ,  C23C16/04 ,  C23C16/455 ,  B29C59/14

CPC分类号： C23C16/54 ,  C23C16/045 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： The device is used for the plasma treatment of workpieces. The workpiece is inserted into a chamber (17) of a treatment station, wherein said chamber can be evacuated at least partially. The plasma chamber is delimited by a chamber bottom (29), a chamber cover (31), and a lateral chamber wall (18) and has a positionable gas lance (36). The gas lance is made of a dielectric at least in some regions.

公开(公告)号：EP2630273B1

公开(公告)日：2019-05-08

申请号：EP11788021.1

申请日：2011-09-01

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian

IPC分类号： C23C16/26 ,  C23C16/40 ,  C23C16/503 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52 ,  B65D23/02 ,  C23C16/04 ,  C23C16/02

公开(公告)号：EP2652169A1

公开(公告)日：2013-10-23

申请号：EP11831820.3

申请日：2011-12-15

申请人： KHS Corpoplast GmbH

发明人： ANDERSEN, Arne ,  HERBORT, Michael ,  SIEBELS, Sönke

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/511 ,  C23C16/515

CPC分类号： C23C16/511 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/30 ,  C23C16/515

摘要： The method serves for the plasma treatment of workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber top and a lateral chamber wall. The plasma treatment involves depositing a coating on the workpiece. The ignition of the plasma is performed by microwave energy. The coating consists at least of a gas barrier layer and a protective layer. The gas barrier layer contains SiOx and the protective layer contains carbon. The protective layer is produced from a gas that contains at least a silicon compound and argon.

公开(公告)号：EP2630273A1

公开(公告)日：2013-08-28

申请号：EP11788021.1

申请日：2011-09-01

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian

IPC分类号： C23C16/26 ,  C23C16/40 ,  C23C16/503 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52 ,  B65D23/02 ,  C23C16/04 ,  C23C16/02

CPC分类号： C23C16/511 ,  C23C16/029 ,  C23C16/045 ,  C23C16/047 ,  C23C16/401 ,  C23C16/503 ,  C23C16/515 ,  C23C16/52

摘要： The method and the device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. A coating is deposited on the workpiece by means of the plasma treatment. The plasma is ignited by pulsed microwave energy. Switch-on phases and switch-off phases of a microwave input are specified by a controller. The relation between the duration of the switch-on phases and the duration of the switch-off phases is changed during the execution of the treatment process for a workpiece.

摘要翻译： 该方法和装置用于等离子体处理工件。 工件被插入可至​​少部分抽空的处理站的腔室中。 等离子体腔室由腔室底部，腔室盖和侧室壁限定。 通过等离子体处理将涂层沉积在工件上。 等离子体被脉冲微波能量点燃。 微波输入的接通和断开阶段由控制器指定。 在执行工件的处理过程中，接通阶段的持续时间和关闭阶段的持续时间之间的关系被改变。

公开(公告)号：EP2576857A1

公开(公告)日：2013-04-10

申请号：EP11754610.1

申请日：2011-06-03

申请人： KHS Corpoplast GmbH & Co. KG

发明人： SIEBELS, Sönke ,  MÜLLER, Hartwig

IPC分类号： C23C16/04 ,  C23C16/511 ,  C23C16/455 ,  B65D23/02 ,  H01J37/32

CPC分类号： C23C16/458 ,  B65D23/02 ,  C23C16/045 ,  C23C16/45561 ,  C23C16/511 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32807 ,  H01J37/32899 ,  H01L21/68764 ,  H01L21/68771

摘要： The invention relates to a device for plasma treatment of workpieces. The workpiece is placed into a chamber of a processing station that can be at least partially evacuated. The plasma chamber is bounded by a chamber floor, a chamber cover, and a side chamber wall. The plasma chamber is coupled to a device for feeding and/or discharging process gases in a controlled manner. The plasma chamber is further disposed on a rotatable plasma wheel supported on a static base. At least one process gas channel is disposed in the region of the base, bounded at least in regions by a cover. The cover is implemented as part of the plasma wheel and comprises at least one connection opening to the process gas channel. The connection opening can be coupled to an inner chamber by a connecting channel and at least one control valve.