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    Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich
    2.
    发明公开
    Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich 有权
    使用的光电元件的作为用于机动车辆的前灯的红外线的功能监测的传感器

    公开(公告)号：EP1577651A1

    公开(公告)日：2005-09-21

    申请号：EP05003389.3

    申请日：2005-02-17

    申请人： DaimlerChrysler AG

    发明人： Moisel, Jörg

    IPC分类号： G01J1/42

    CPC分类号： G01J5/28 ,  G01J1/4257 ,  G01J2001/4247

    摘要： Die vorliegende Erfindung betrifft die Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich, insbesondere von Infrarot-Scheinwerfern von Kraftfahrzeugen.

    摘要翻译： 该方法涉及使用一个光电元件作为用于机动车辆头灯的红外线的功能监测的传感器。 只有源的一部分通过的止动评价，并与光电元件相关联的滤光器透射的红外和至少部分地对可见光不透明。

    METHOD AND APPARATUS FOR DETECTING INFRARED RADIATION
    4.
    发明授权
    METHOD AND APPARATUS FOR DETECTING INFRARED RADIATION 失效
    用于检测红外辐射的方法和装置

    公开(公告)号：EP0345343B1

    公开(公告)日：1993-08-25

    申请号：EP89901495.5

    申请日：1988-10-28

    申请人： Santa Barbara Research Center

    发明人： AHLGREN, William, L. ,  SCHULTE, Eric F.

    IPC分类号： H01L31/08 ,  H01L27/14 ,  G01J5/20

    CPC分类号： H01L31/03046 ,  G01J5/28 ,  H01L31/0324 ,  H01L31/109 ,  H01L31/1836 ,  Y02E10/544

    摘要： A method and apparatus for detecting infrared radiation is disclosed. The apparatus comprises a substrate (12) having readout and signal processing circuits (14) integrated therein. The substrate (12) is formed from a material selected from the group consisting of silicon, gallium arsenide, or germanium. A first semiconductor layer (28) is grown on the substrate (12) from a material selected from the group consisting of mercury-cadmium-telluride, mercury-zinc-telluride, mercury-cadmium-selenide, mercury-zinc-selenide, mercury-cadmium-sulfide, mercury-zinc-sulfide, lead-tin-telluride, lead-tin-selenide, lead-tin-sulfide, indium-arsenide-antimonide, gallium-indium-antimonide, or gallium-antimonide-arsenide. A second semiconductor layer (30) is then grown on the first semiconductor layer (28).

    INFRARED RADIATION-DETECTING DEVICE
    9.
    发明公开
    INFRARED RADIATION-DETECTING DEVICE 失效
    INFRAROTSTRAHLUNGSDETEKTIEREINRICHTUNG

    公开(公告)号：EP0953212A4

    公开(公告)日：2000-05-31

    申请号：EP97945186

    申请日：1997-08-27

    申请人： CALIFORNIA INST OF TECHN

    发明人： GUNAPALA SARATH ,  LIU JOHN K ,  PARK JIN S ,  LIN TRUE-LON ,  SUNDARAM MANI

    IPC分类号： G01J1/02 ,  G01J5/28 ,  H01L27/14 ,  H01L31/0248 ,  H01L31/0352 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

    摘要： An AlxGa1-xAs/GaAs/Al Gxa As1-x quantum well (308, 406, 408) exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the 'top' (i.e., the upper-most energy barrier) of the quantum well (308, 406, 408). The energy barrier for thermionic emission (ET) is thus equal to the energy required for intersubband absorption (EP). Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well (308, 406, 408) is maintained at a high level.

    摘要翻译： 描述了表现出准结合束带间吸收跃迁的Al x Ga 1-x As / GaAs / Al G x As 1-x量子阱（308,406,408）。 当第一激发态具有与量子阱（308,406,408）的“顶部”（即，最高能量势垒）相同的能量时，存在束缚 - 准束耦合转变。 热电子发射（ET）的能垒因此等于子带间吸收（EP）所需的能量。 以这种方式增加能量障碍减少暗电流。 量子阱（308,406,408）产生的光电流量保持在高水平。

    SYNCHRONOUS DETECTION SYSTEM FOR MULTICHANNEL INFRARED SPECTROSCOPY
    10.
    发明公开
    SYNCHRONOUS DETECTION SYSTEM FOR MULTICHANNEL INFRARED SPECTROSCOPY 失效
    同步检波方式多通道红外光谱仪

    公开(公告)号：EP0882218A1

    公开(公告)日：1998-12-09

    申请号：EP97907713.0

    申请日：1997-02-21

    申请人： DIASENSE, INC.

    发明人： WACZYNSKI, Augustyn ,  HENDRICKSON, Mark, L. ,  HARTWICK, David, J.

    IPC分类号： G01J1 ,  G01J5

    CPC分类号： G01J5/28 ,  G01J1/0266 ,  G01J1/04 ,  G01J1/044 ,  G01J1/44 ,  G01J3/0232 ,  G01J3/0289 ,  G01J5/30 ,  G01J2001/4242

    摘要： Disclosed is a radiation detector which includes at least one photoconductive detector (6) and a modulator (2), which modulates in an on-off manner radiation passing to the photoconductive detector (6) from a radiation source (4). A bias source (8) is connected to one terminal of the photoconductive detector (6). A first amplifier (17) is connected to the other terminal of the photoconductive detector (6), and a second amplifier (34) receives an output of the first amplifier (17). A first phase detector (36) detects the phase of modulation of the radiation source (4) by the modulator (2) and generates a reference signal relating thereto. A switch (34) in the second amplifier (24) changes, in response to the reference signal generated by the first phase detector (36), the second amplifier between an inverting state and a non-inverting state as the modulator (2) changes the phase of modulation of the radiation.