摘要:
In one aspect the disclosure is directed to a binary silica-titania blank having a CTE of 0 ± 30 ppb/°C or less and a insert made of silica-titania-dopant(s) glass in the critical zone, wherein the dopants are selected from the group consisting of aluminum oxide, selected transition metal oxides, and amount of the dopants is in the range of 0.05 wt.% to 8 wt.% and the insert is fusion bonded to the blank with or without a frit. In various embodiments the dopants are selected from the group consisting of 0.25 wt.% to 8 wt.% Al 2 O 3 , 0.05 wt.% to 3 wt.% Nb 2 O 5 , and 0.25 wt.% to 6 wt.% Ta 2 O 5 .
摘要:
An objective is to provide a reflective mask blank, a reflective mask, and methods for manufacturing those, suppress reflectance at a light-shielding frame, and improve quality. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.
摘要:
The present inventions relates to a substrate for a photolithographic mask comprising a coating deposited on a rear surface of the substrate, wherein the coating comprises (a) at least one electrically conducting layer, and (b) wherein a thickness of the at least one layer is smaller than 30 nm, preferably smaller than 20 nm, and most preferably smaller than 10 nm.
摘要:
In one aspect the disclosure is directed to a binary silica-titania blank having a CTE of 0 ± 30 ppb/°C or less and a insert made of silica-titania-dopant(s) glass in the critical zone, wherein the dopants are selected from the group consisting of aluminum oxide, selected transition metal oxides, and amount of the dopants is in the range of 0.05 wt.% to 8 wt.% and the insert is fusion bonded to the blank with or without a frit. In various embodiments the dopants are selected from the group consisting of 0.25 wt.% to 8 wt.% Al 2 O 3 , 0.05 wt.% to 3 wt.% Nb 2 O 5 , and 0.25 wt.% to 6 wt.% Ta 2 O 5 .
摘要翻译:在一个方面,本公开涉及具有0±30ppb /℃或更低的CTE的二元二氧化硅 - 二氧化钛坯料和在临界区中由二氧化硅 - 二氧化钛 - 掺杂剂玻璃制成的插入物,其中掺杂剂为 选自氧化铝,选定的过渡金属氧化物和掺杂剂的量在0.05重量%至8重量%的范围内,并且插入物与或不与玻璃料熔合在一起。 在各种实施方案中,掺杂剂选自由0.25重量%至8重量%的Al 2 O 3,0.05重量%至3重量%的Nb 2 O 5和0.25重量%至6重量% Ta 2 O 5。