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    METHOD OF OPERATING A PVD APPARATUS
    1.
    发明公开
    METHOD OF OPERATING A PVD APPARATUS 审中-公开

    公开(公告)号：EP4375394A1

    公开(公告)日：2024-05-29

    申请号：EP23194488.5

    申请日：2023-08-31

    申请人： SPTS Technologies Limited

    发明人： HAYMORE, Scott ,  WILBY, Anthony Paul ,  BURGESS, Steve

    IPC分类号： C23C14/02 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01L21/285 ,  H01L21/768 ,  H01L23/00 ,  H01J37/32

    CPC分类号： C23C14/345 ,  C23C14/022 ,  C23C14/021 ,  C23C14/042 ,  C23C14/35 ,  C23C14/564 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76877 ,  H01L21/76843 ,  H01L24/03 ,  H01J37/32862 ,  H01J37/3464 ,  H01J37/3405 ,  H01L24/05

    摘要： According to the invention there is provided a method of operating a PVD apparatus to perform a cleaning step and a deposition step on an electrically conductive feature formed on a semiconductor substrate comprising the steps of:
    providing a PVD apparatus comprising a chamber having a substrate support, a target, an RF bias signal supply for applying an RF bias to the substrate support and an electrical signal supply for supplying an electrical signal to the target;
    positioning the semiconductor substrate with the electrically conductive feature thereon on the substrate support;
    performing a cleaning step by introducing at least one inert gas into the chamber, applying an RF bias to the substrate support and supplying an electrical signal having an associated electrical power to the target, wherein the RF bias and electrical power are sufficient to remove material from the electrically conductive feature predominantly by etching with ions of the inert gas while the target is simultaneously sputtered ; and
    performing a deposition step by applying no RF bias to the substrate support or applying an RF bias which is less than the RF bias applied to the substrate support during the cleaning step and supplying an electrical signal having an associated electrical power to the target, wherein the RF bias, if present, and electrical power are sufficient to deposit an electrically conductive deposition material onto the electrically conductive feature by PVD.

    CHARGED-PARTICLE MICROSCOPE WITH IN SITU DEPOSITION FUNCTIONALITY
    5.
    发明公开
    CHARGED-PARTICLE MICROSCOPE WITH IN SITU DEPOSITION FUNCTIONALITY 审中-公开
    具有原位沉积功能的带电粒子显微镜

    公开(公告)号：EP3249676A1

    公开(公告)日：2017-11-29

    申请号：EP16171645.1

    申请日：2016-05-27

    申请人： FEI Company

    发明人： Mitchels, John ,  Schampers, Ruud ,  Hrouzek, Michal ,  Gardelka, Tomas

    IPC分类号： H01J37/28 ,  H01J37/34 ,  C23C14/35

    CPC分类号： H01J37/3405 ,  C23C14/35 ,  H01J37/06 ,  H01J37/08 ,  H01J37/18 ,  H01J37/20 ,  H01J37/26 ,  H01J37/28 ,  H01J37/285 ,  H01J37/32623 ,  H01J37/3464 ,  H01J2237/3137

    摘要： A charged-particle microscope M, comprising a vacuum chamber in which are provided:
    - A specimen holder 7 for holding a specimen in an irradiation position Pi;
    - A particle-optical column 1;31, for producing a charged particle beam 3';33 and directing it so as to irradiate the specimen;
    - A detector 19, for detecting a flux of radiation emanating from the specimen in response to irradiation by said beam,
    wherein:
    - Said vacuum chamber comprises an in situ magnetron sputter deposition module D, comprising a magnetron sputter source for producing a vapor stream of target material;
    - A stage 7,7' is configured to move a sample comprising at least part of said specimen between said irradiation position and a separate deposition position Pd at said deposition module;
    - Said deposition module is configured to deposit a layer of said target material onto said sample when held at said deposition position.

    摘要翻译： 一个带电粒子显微镜M，包括一个真空室，在其中提供： - 样品架7，用于将样品保持在照射位置Pi; - 用于产生带电粒子束3'的粒子光学镜筒1; 31;并引导它以照射样品; - 检测器19，用于检测响应于所述束照射而从样本发出的辐射通量，其中： - 所述真空室包括原位磁控溅射沉积模块D，其包括磁控溅射源，用于产生 目标材料; - 阶段7,7'被配置为在所述沉积模块处将包括所述样本的至少一部分的样本移动到所述照射位置和单独的沉积位置Pd之间; 所述沉积模块被配置成当被保持在所述沉积位置时将所述靶材料层沉积到所述样品上。

    SPUTTERING TARGET AND/OR COIL AND PROCESS FOR PRODUCING SAME
    7.
    发明公开
    SPUTTERING TARGET AND/OR COIL AND PROCESS FOR PRODUCING SAME 审中-公开
    SPUTTERTARGET UND / ODER SPULE SOWIE HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2599892A1

    公开(公告)日：2013-06-05

    申请号：EP11812510.3

    申请日：2011-07-27

    申请人： JX Nippon Mining & Metals Corporation

    发明人： NAGATA Kenichi ,  MAKINO Nobuhito

    IPC分类号： C23C14/34

    CPC分类号： C23C14/34 ,  C21D1/74 ,  C21D3/06 ,  C22C14/00 ,  C22C27/02 ,  C22F1/00 ,  C22F1/18 ,  C22F1/183 ,  C23C14/3414 ,  C23C14/3471 ,  H01J37/3426 ,  H01J37/3464 ,  H01J37/3491 ,  H01J37/3497 ,  Y10T29/49865

    摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 µL/cm 2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.

    摘要翻译： 设置有用于限制等离子体的等离子体产生区域周边的溅射靶和/或线圈。 靶和/或线圈具有氢含量为500μL/ cm 2以下的要被侵蚀的表面。 在处理靶和/或线圈的表面的氢含量的降低时，制造靶材和/或线圈的工艺，特别是用于加热靶材和/或线圈表面的条件， 被认为是氢气闭塞的原因，被适当调节。 结果，能够降低靶的表面的氢气闭塞，能够提高溅射时的真空度。 因此，本发明提供了具有均匀和精细结构的靶和/或线圈，使得等离子体稳定，并且允许形成具有优异均匀性的膜，并提供了制造靶材和/或线圈的方法。