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公开(公告)号:EP3363047A1
公开(公告)日:2018-08-22
申请号:EP16856062.1
申请日:2016-10-12
申请人: Invensas Corporation
IPC分类号: H01L23/49 , H01L23/498 , H01L25/065 , H01L25/10 , H01L23/00
CPC分类号: H01L25/0657 , H01L23/3135 , H01L23/3157 , H01L23/552 , H01L24/01 , H01L24/42 , H01L24/44 , H01L24/45 , H01L24/46 , H01L24/47 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L25/0655 , H01L25/16 , H01L2224/42 , H01L2224/44 , H01L2224/45 , H01L2224/46 , H01L2224/47 , H01L2224/48 , H01L2224/48091 , H01L2224/49 , H01L2224/49051 , H01L2224/49052 , H01L2225/06506 , H01L2225/06537 , H01L2924/19107 , H01L2924/00014
摘要: Apparatuses relating generally to a vertically integrated microelectronic package are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface. A first microelectronic device is coupled to the upper surface of the substrate. The first microelectronic device is a passive microelectronic device. First wire bond wires are coupled to and extend away from the upper surface of the substrate. Second wire bond wires are coupled to and extend away from an upper surface of the first microelectronic device. The second wire bond wires are shorter than the first wire bond wires. A second microelectronic device is coupled to upper ends of the first wire bond wires and the second wire bond wires. The second microelectronic device is located above the first microelectronic device and at least partially overlaps the first microelectronic device.