公开(公告)号：EP2596526A4

公开(公告)日：2015-01-28

申请号：EP11810162

申请日：2011-07-12

申请人： IBM ,  IBM

发明人： FAROOQ MUKTA G ,  HANNON ROBERT ,  VOLANT RICHARD P

IPC分类号： H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81801 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP3333883A1

公开(公告)日：2018-06-13

申请号：EP17204936.3

申请日：2017-12-01

申请人： IMEC vzw ,  Universiteit Gent

发明人： OP DE BEECK, Mrs. Maria ,  VANDECASTEELE, Mr. Bjorn

IPC分类号： H01L21/60 ,  H01L21/58 ,  H01L21/78 ,  H01L23/544

CPC分类号： H01L24/96 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/25 ,  H01L24/81 ,  H01L24/83 ,  H01L24/93 ,  H01L24/97 ,  H01L29/0657 ,  H01L2221/68354 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/25175 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/30166 ,  H01L2224/81132 ,  H01L2224/818 ,  H01L2224/83005 ,  H01L2224/83132 ,  H01L2224/83192 ,  H01L2224/8338 ,  H01L2224/83855 ,  H01L2224/93 ,  H01L2224/95001 ,  H01L2224/95121 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/1515 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2224/81

摘要： A method is disclosed for placing on a carrier substrate (7) a semiconductor device (3), the method comprises providing a semiconductor substrate (1) comprising a rectangular shaped assist chip (2) which comprises at least one semiconductor device (3) surrounded by a metal-free border (6), dicing the semiconductor substrate (1) to singulate the rectangular shaped assist chip (2), providing a carrier substrate (7) having adhesive (10) thereon, transferring to and placing on the carrier substrate (7) the rectangular shaped assist chip (2), thereby contacting the adhesive with the assist chip (2) at least at the location of the semiconductor device (3), and singulating the semiconductor device (3), while remaining attached to the carrier substrate (7) by the adhesive (10), by removing the part of rectangular shaped assist chip (2) other than the semiconductor device (3).

公开(公告)号：EP2596526A2

公开(公告)日：2013-05-29

申请号：EP11810162.5

申请日：2011-07-12

申请人： International Business Machines Corporation ,  International Business Machines Corporation (YT)

发明人： FAROOQ, Mukta, G. ,  HANNON, Robert ,  VOLANT, Richard, P.

IPC分类号： H01L21/768 ,  H01L21/3205 ,  H01L21/28 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81801 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/05552

摘要： A through-substrate via (TSV) structure that is immune to metal contamination due to a backside planarization process is provided. After forming a through-substrate via (TSV) trench, a diffusion barrier liner is conformally deposited on the sidewalls of the TSV trench. A dielectric liner is formed by depositing a dielectric material on vertical portions of the diffusion barrier liner. A metallic conductive via structure is formed by subsequently filling the TSV trench. Horizontal portions of the diffusion barrier liner are removed. The diffusion barrier liner protects the semiconductor material of the substrate during the backside planarization by blocking residual metallic material originating from the metallic conductive via structure from entering into the semiconductor material of the substrate, thereby protecting the semiconductor devices within the substrate from metallic contamination.

公开(公告)号：EP2521166A1

公开(公告)日：2012-11-07

申请号：EP12002367.6

申请日：2012-03-30

申请人： Danfoss Silicon Power GmbH

发明人： Kock, Mathias ,  Eisele, Ronald

IPC分类号： H01L21/56 ,  C23C4/12 ,  H01L21/683

CPC分类号： H01L21/568 ,  C23C4/01 ,  C23C4/02 ,  C23C4/134 ,  C23C4/18 ,  H01L21/561 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/93 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03418 ,  H01L2224/03442 ,  H01L2224/03444 ,  H01L2224/056 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2224/03

摘要： Erstellen eines Wafers (2), Aufbringen von Strukturen von Bauelementen (1) auf den Wafer (2), um einen Waferverbund auszubilden, Aufbringen einer Metallschicht (5) auf den Wafer (2), Entfernen der Metallschicht (5) in Nichtkontaktbereichen der Bauelemente (1), Aufbringen von Passivierungsrändem auf die Randbereiche der Bauelemente (1), Aufbringen des Wafers (2) auf eine von einem Spannring gehaltenen Folie (4), Vereinzeln der von der Folie (4) getragenen Bauelemente (1) voneinander aus dem Waferverbund heraus, Auflegen einer abdeckenden Maske (3) auf nicht zu beschichtende Bereiche der von der Folie (4) getragenen vereinzelten Bauelemente (1), Aufbringen einer Metallschicht (5) auf die mit der Maske (3) maskierten vereinzelten Bauelemente (1), Entfernen der Maske (3) und Abnehmen der Bauelemente (1) von der Folie (4) und Weiterbehandeln der vereinzelten Bauelemente (2), bei dem das Aufbringen einer Metallschicht (5) auf die mit der Maske (3) maskierten vereinzelten Bauelemente (1) mittels thermischem Spritzen erfolgt.

摘要翻译： 将组分（2）和金属层（5）的结构施加到晶片（1）上。 部件的非接触区域中的金属层被去除。 钝化边缘施加在部件的边缘。 晶片由夹紧环膜（4）保持。 部件与晶片组件分离。 将覆盖掩模（3）施加在未涂覆的膜的区域上。 通过热喷涂将金属层施加在组合的掩模上，并除去掩模。 进行薄膜组分的薄化处理和分离的组分。