公开(公告)号：EP3113585A4

公开(公告)日：2017-10-25

申请号：EP15750613

申请日：2015-02-24

申请人： NGK INSULATORS LTD

发明人： TAKAGAKI TATSURO ,  IWASAKI YASUNORI ,  MIYAZAWA SUGIO ,  IDE AKIYOSHI ,  NAKANISHI HIROKAZU

IPC分类号： H05K1/03 ,  C04B35/111 ,  H05K3/00

CPC分类号： H05K1/115 ,  C04B35/111 ,  C04B35/119 ,  C04B35/634 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/6023 ,  C04B2235/606 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/662 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  H01B3/12 ,  H01B17/56 ,  H05K1/03 ,  H05K1/0306 ,  H05K3/00 ,  H05K3/0014 ,  H05K3/0029 ,  H05K2201/09009 ,  Y10T428/24273

摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.

公开(公告)号：EP2871668A4

公开(公告)日：2016-03-02

申请号：EP14772860

申请日：2014-03-19

申请人： NGK INSULATORS LTD

发明人： IDE AKIYOSHI ,  IWASAKI YASUNORI ,  MIYAZAWA SUGIO

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L27/1203 ,  H01L29/78603 ,  Y10T428/24355

摘要： A handle substrate 11 or 11A is formed of an insulating polycrystalline material, the handle substrate has a surface 15 having a microscopic central line average surface roughness Ra of 5nm or smaller, and height differences 3 are provided between exposed faces 2a of crystal grains 2 exposing to said surface 15.

公开(公告)号：EP2978009A4

公开(公告)日：2016-12-28

申请号：EP14873693

申请日：2014-12-16

申请人： NGK INSULATORS LTD

发明人： MIYAZAWA SUGIO ,  IWASAKI YASUNORI ,  TAKAGAKI TATSURO ,  IDE AKIYOSHI ,  NAKANISHI HIROKAZU

IPC分类号： H01L21/02 ,  C01F7/02 ,  C04B35/115 ,  C04B35/64 ,  C04B37/00 ,  H01L21/683 ,  H01L21/762 ,  H01L23/15 ,  H01L27/12 ,  H01L29/06

CPC分类号： H01L21/76254 ,  C01F7/02 ,  C01P2006/60 ,  C04B35/10 ,  C04B35/115 ,  C04B35/64 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/786 ,  C04B2237/343 ,  C04B2237/70 ,  C04B2237/704 ,  H01L21/02002 ,  H01L21/6835 ,  H01L23/15 ,  H01L27/12 ,  H01L29/06 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381

摘要： It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

公开(公告)号：EP2953157A4

公开(公告)日：2016-02-24

申请号：EP14877410

申请日：2014-10-15

申请人： NGK INSULATORS LTD

发明人： TAKAGAKI TATSURO ,  IWASAKI YASUNORI ,  MIYAZAWA SUGIO ,  IDE AKIYOSHI ,  NAKANISHI HIROKAZU

IPC分类号： H01L21/02 ,  C04B35/111 ,  C04B35/115 ,  H01L27/12

CPC分类号： H01L21/683 ,  C04B35/111 ,  C04B35/115 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6025 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/945 ,  C04B2235/963 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/2007 ,  H01L27/12 ,  H01L29/16 ,  Y10T428/21 ,  Y10T428/219 ,  Y10T428/24777

公开(公告)号：EP1491926A4

公开(公告)日：2006-05-17

申请号：EP03712968

申请日：2003-03-26

申请人： NGK INSULATORS LTD

发明人： FUKUYAMA MASASHI ,  IWASAKI YASUNORI ,  IDE AKIYOSHI

IPC分类号： G02B6/12 ,  G02B6/36 ,  G02B6/42

CPC分类号： G02B6/3636 ,  G02B6/3652 ,  G02B6/4214 ,  G02B6/423 ,  G02B6/4239 ,  G02B6/4249 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An optical device (100) comprising a first substrate (104) in which V-grooves (102) are made, four optical fibers (106), for example, having a reflective function and fixed in the V-grooves (102) of the first substrate (104), an optical element (110) bonded, through an adhesive layer (108), onto the optical path of a reflected light at least generated by the reflective function on the outside of the clad of each optical fiber (106), and a second substrate (112) for mounting the optical element (110), wherein the second substrate (112) is disposed such that the mounting surface (112a) of the optical element (110) faces the first substrate (104).

摘要翻译： 具有反射功能的光纤（106）固定在基板（104）的V形槽（102）中。 光学元件（110）通过粘合剂层（108）与纤维结合。 衬底（112）布置在光学元件（110）上，使得表面（112a）面向衬底（104）。 还包括用于光学器件制造方法的独立权利要求。

公开(公告)号：EP2916346A4

公开(公告)日：2016-04-20

申请号：EP14826358

申请日：2014-07-10

申请人： NGK INSULATORS LTD

发明人： IWASAKI YASUNORI ,  IDE AKIYOSHI ,  MIYAZAWA SUGIO

IPC分类号： H01L21/02 ,  B32B18/00 ,  C04B35/115 ,  C04B35/634 ,  C04B37/00

CPC分类号： C04B35/44 ,  B32B18/00 ,  B32B2250/02 ,  B32B2305/026 ,  B32B2457/14 ,  C04B35/115 ,  C04B35/634 ,  C04B37/005 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/775 ,  C04B2235/786 ,  C04B2235/963 ,  C04B2237/062 ,  C04B2237/30 ,  C04B2237/343 ,  C04B2237/52 ,  H01L21/2007 ,  H01L27/1203

公开(公告)号：EP2736065A4

公开(公告)日：2015-02-11

申请号：EP13820306

申请日：2013-07-16

申请人： NGK INSULATORS LTD

发明人： IWASAKI YASUNORI ,  IDE AKIYOSHI ,  HORI YUJI ,  TAI TOMOYOSHI ,  MIYAZAWA SUGIO

IPC分类号： H01L21/02

CPC分类号： H01L29/06 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/762 ,  H01L21/76251

公开(公告)号：EP2116889A4

公开(公告)日：2011-10-05

申请号：EP08711429

申请日：2008-02-12

申请人： NGK INSULATORS LTD

发明人： MITOMI OSAMU ,  AOKI KENJI ,  KONDO JUNGO ,  IWATA YUICHI ,  EJIRI TETSUYA ,  IDE AKIYOSHI

IPC分类号： G02F1/035

CPC分类号： G02F1/0356 ,  G02F1/0316 ,  G02F2203/50

公开(公告)号：EP3107116A4

公开(公告)日：2018-01-03

申请号：EP15748537

申请日：2015-01-13

申请人： NGK INSULATORS LTD

发明人： MIYAZAWA SUGIO ,  IWASAKI YASUNORI ,  TAKAGAKI TATSURO ,  IDE AKIYOSHI ,  NAKANISHI HIROKAZU

IPC分类号： H01L21/02

CPC分类号： H01L29/16 ,  C04B35/115 ,  C04B35/6264 ,  C04B35/632 ,  C04B35/634 ,  C04B37/001 ,  C04B37/005 ,  C04B37/008 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/786 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/52 ,  C04B2237/588 ,  C30B29/06 ,  C30B33/06 ,  H01L21/2007 ,  H01L29/0649 ,  Y10T428/24355

摘要： A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 µm and a central part with an average grain size of 10 to 50 µm. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

公开(公告)号：EP3113586A4

公开(公告)日：2017-10-25

申请号：EP15754711

申请日：2015-02-20

申请人： NGK INSULATORS LTD

发明人： TAKAGAKI TATSURO ,  IWASAKI YASUNORI ,  MIYAZAWA SUGIO ,  IDE AKIYOSHI ,  NAKANISHI HIROKAZU

IPC分类号： H05K1/03 ,  C04B35/111 ,  H05K3/00

CPC分类号： H05K1/115 ,  C04B35/111 ,  C04B35/119 ,  C04B35/634 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/6023 ,  C04B2235/606 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/662 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  H01B3/12 ,  H01B17/56 ,  H05K1/03 ,  H05K1/0306 ,  H05K3/00 ,  H05K3/0014 ,  H05K3/0029 ,  H05K2201/09009 ,  Y10T428/24273

摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.