公开(公告)号：EP2067878A1

公开(公告)日：2009-06-10

申请号：EP08791332.3

申请日：2008-07-18

申请人： Nippon Mining & Metals Co., Ltd.

发明人： YABE, Atsushi ,  ITO, Junichi ,  HISUMI, Yoshiyuki ,  SEKIGUCHI, Junnosuke ,  IMORI, Toru

IPC分类号： C23C18/18 ,  C23C14/38 ,  C23C14/42 ,  C23C28/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

CPC分类号： H01L21/76843 ,  C23C14/165 ,  C23C14/584 ,  C23C18/31 ,  C23C18/54 ,  C25D5/02 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12639 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12986 ,  Y10T428/265 ,  H01L2924/00

摘要： The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5at% to 40at% of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 µΩ · cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

公开(公告)号：EP0975818A1

公开(公告)日：2000-02-02

申请号：EP98924109.6

申请日：1998-04-09

申请人： Cemecon-Ceramic Metal Coatings-Dr.-Ing. Antonius Leyendecker GmbH

发明人： LEYENDECKER, Antonius ,  ERKENS, Georg ,  HERMELER, Bernd ,  ESSER, Stefan ,  FUSS, Hans-Gerd ,  WENKE, Rainer

IPC分类号： C23C14/42 ,  H01J37/32

CPC分类号： C23C14/345 ,  C23C14/3464 ,  H01J37/34 ,  H01J37/3444

摘要： The invention relates to a PVD coating method and to a PVD coating device with a chamber (1) in which at least one target cathode (3), at least one anode (2) and at least one substrate holder (9) which is intended to hold at least one substrate (10) are arranged, and with a control device (4, 6, 7) which delivers a first voltage in order to supply the target cathode (3) with a negative electrical potential relative to the anode (2) in order to form a plasma (P) in which the substrate (10) is arranged, and which delivers a second voltage in order to supply the anode (2) with a positive electrical potential relative to the chamber wall (8). In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties. It is increased according to the invention in that the control device (4, 6, 7) delivers a third voltage which supplies the substrate (10) with an electrical potential that is more negative than the potential of the anode (2).

公开(公告)号：EP0350940A3

公开(公告)日：1991-01-09

申请号：EP89112903.3

申请日：1989-07-13

申请人： MITSUBISHI KASEI CORPORATION

发明人： Komizo, Kazunaga ,  Ichikawa, Masatoshi ,  Sakuma, Takeshi ,  Yokoyama, Fumiaki ,  Yamaguchi, Yukio

IPC分类号： G11B5/84 ,  H01J37/34 ,  C23C14/42

CPC分类号： G11B5/851 ,  G11B5/8404

摘要： A method for producing a magnetic recording medium, which comprises forming, by sputtering, a thin undercoating layer and a thin cobalt alloy magnetic layer sequentially on a substrate, wherein an intermediate electrode is provided in the vicinity of the target to enclose at least 1/2 of the circumference of the sputter erosion end of the target, and at least one of the undercoating layer and the cobalt alloy magnetic layer is formed under such condition that a positive potential relative to the substrate and the grounded portion of the main body of the layer-forming apparatus, is applied to the intermediate electrode.

公开(公告)号：EP0357824A1

公开(公告)日：1990-03-14

申请号：EP88114691.4

申请日：1988-09-08

申请人： Uramoto, Joshin ,  ASAHI GLASS COMPANY LTD.

发明人： Uramoto, Joshin ,  Suzuki, Koichi ,  Oyama, Takuji ,  Kojima, Hiroyasu

IPC分类号： H01J37/34 ,  H05H1/50 ,  C23C14/42

CPC分类号： H01J37/3402 ,  C23C14/355 ,  C23C14/46 ,  H05H1/50

摘要： A high-efficient sheet plasma sputtering method and an apparatus for carrying out the method which comprise means for deforming an arc plasma stream (1) into a form of sheet (3) by a magnetic field so that ions in the sheet plasma are accelerated to a target (5) which is controlled to have a negative potential to the sheet plasma, whereby a coating layer is formed by sputtering on a substrate (7) arranged opposite the target with respect to the sheet plasma.

摘要翻译： 用于实施该方法的高效率的片状等离子体溅射方法和装置，其包括用于通过磁场在电弧等离子体流（1）变形为片材（3）的形式所以没有片等离子体中的离子被加速到 被控制为具有对片状等离子体，由此涂料层通过溅射在衬底形成的负电势的目标（5）所有（7）布置在所述目标相对相对于所述片状等离子体。

公开(公告)号：EP2067878A4

公开(公告)日：2011-08-03

申请号：EP08791332

申请日：2008-07-18

申请人： NIPPON MINING CO

发明人： YABE ATSUSHI ,  ITO JUNICHI ,  HISUMI YOSHIYUKI ,  SEKIGUCHI JUNNOSUKE ,  IMORI TORU

IPC分类号： C23C18/18 ,  C23C14/38 ,  C23C14/42 ,  C23C28/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

CPC分类号： H01L21/76843 ,  C23C14/165 ,  C23C14/584 ,  C23C18/31 ,  C23C18/54 ,  C25D5/02 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12639 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12986 ,  Y10T428/265 ,  H01L2924/00

公开(公告)号：EP0357824B1

公开(公告)日：1993-04-07

申请号：EP88114691.4

申请日：1988-09-08

申请人： Uramoto, Joshin ,  ASAHI GLASS COMPANY LTD.

发明人： Uramoto, Joshin ,  Suzuki, Koichi ,  Oyama, Takuji ,  Kojima, Hiroyasu

IPC分类号： H01J37/34 ,  H05H1/50 ,  C23C14/42

CPC分类号： H01J37/3402 ,  C23C14/355 ,  C23C14/46 ,  H05H1/50

公开(公告)号：EP0168931B1

公开(公告)日：1989-11-08

申请号：EP85303890.9

申请日：1985-06-03

申请人： DRESSER INDUSTRIES,INC.

发明人： Scruggs, David Milton

IPC分类号： C23C4/00 ,  C23C6/00 ,  C23C8/00 ,  C23C12/00 ,  C23C14/14 ,  C23C14/30 ,  C23C14/34 ,  C23C14/42 ,  C25D3/00 ,  E21B3/00 ,  E21B27/00

CPC分类号： B23K35/30 ,  C21D7/04 ,  C23C26/00 ,  C23C30/00 ,  E21B10/46 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12951

公开(公告)号：EP0975818B1

公开(公告)日：2002-09-25

申请号：EP98924109.6

申请日：1998-04-09

申请人： Cemecon-Ceramic Metal Coatings-Dr.-Ing. Antonius Leyendecker GmbH

发明人： LEYENDECKER, Antonius ,  ERKENS, Georg ,  HERMELER, Bernd ,  ESSER, Stefan ,  FUSS, Hans-Gerd ,  WENKE, Rainer

IPC分类号： C23C14/42 ,  H01J37/32

CPC分类号： C23C14/345 ,  C23C14/3464 ,  H01J37/34 ,  H01J37/3444

摘要： The invention relates to a PVD coating method and to a PVD coating device with a chamber (1) in which at least one target cathode (3), at least one anode (2) and at least one substrate holder (9) which is intended to hold at least one substrate (10) are arranged, and with a control device (4, 6, 7) which delivers a first voltage in order to supply the target cathode (3) with a negative electrical potential relative to the anode (2) in order to form a plasma (P) in which the substrate (10) is arranged, and which delivers a second voltage in order to supply the anode (2) with a positive electrical potential relative to the chamber wall (8). In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties. It is increased according to the invention in that the control device (4, 6, 7) delivers a third voltage which supplies the substrate (10) with an electrical potential that is more negative than the potential of the anode (2).

公开(公告)号：EP0350940B1

公开(公告)日：1994-03-16

申请号：EP89112903.3

申请日：1989-07-13

申请人： MITSUBISHI KASEI CORPORATION

发明人： Komizo, Kazunaga ,  Ichikawa, Masatoshi ,  Sakuma, Takeshi ,  Yokoyama, Fumiaki ,  Yamaguchi, Yukio

IPC分类号： G11B5/84 ,  H01J37/34 ,  C23C14/42

CPC分类号： G11B5/851 ,  G11B5/8404

公开(公告)号：EP0404973A1

公开(公告)日：1991-01-02

申请号：EP89111705.3

申请日：1989-06-27

申请人： HAUZER HOLDING B.V.

发明人： Wesemeyer, Harald, Dr.

IPC分类号： C23C14/02 ,  C23C14/42

CPC分类号： C23C14/345 ,  C23C14/022 ,  C23C14/325 ,  C23C14/35 ,  C23C14/352 ,  C23C14/355 ,  H01J37/32055

摘要： Es wird ein Verfahren sowie eine Vorrichtung zur Beschich­tung von Substraten beschrieben, bei denen die aufzubringen­de Schicht durch auf das betreffende Substrat 34 auftreffen­de kondensierende Teilchen eines mittels einer Gasentladung erzeugten Plasmas hergestellt wird. Zur Verankerung der auf­zubauenden Schicht sowie zur Herstellung einer Haftgrenz­schicht wird zunächst eine Bogenentladungsverdampfung durch­geführt. Zur Herstellung einer hochqualitativen, sich an die Haftgrenzschicht anschließenden Schicht wird eine Kathoden­zerstäubung vorgenommen. Für sämtliche Plasmastromkreise 18 bis 22 ist eine gemeinsame Elektrode 14 vorgesehen.

摘要翻译： 描述了一种用于涂覆基材的方法和装置，其中待涂覆的涂层是通过将通过气体放电产生的等离子体的颗粒聚集在一起而产生的，所述颗粒撞击相关的基材34.为了固定待建造的涂层 并产生粘附促进边界层，首先进行电弧放电汽化。 为了在附着促进边界层附近产生高质量的涂层，进行阴极溅射。 为所有等离子体电路18至22提供公共电极14