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    METHOD FOR MANUFACTURING THIN FILM
    6.
    发明公开
    METHOD FOR MANUFACTURING THIN FILM 审中-公开

    公开(公告)号：EP4249629A1

    公开(公告)日：2023-09-27

    申请号：EP21894643.2

    申请日：2021-11-16

    申请人： ADEKA CORPORATION

    发明人： NISHIDA, Akihiro ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  OOE, Yoshiki ,  MITSUI, Chiaki

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

    摘要： Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300°C or more and less than 450°C to form the thin-film containing a hafnium atom on the surface of the substrate:

    wherein R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R 3 and R 4 each independently represent an alkyl group having 1 to 3 carbon atoms.

    ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM
    8.
    发明公开
    ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM 审中-公开

    公开(公告)号：EP4180417A1

    公开(公告)日：2023-05-17

    申请号：EP21837909.7

    申请日：2021-06-25

    申请人： ADEKA CORPORATION

    发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  OKADA, Nana ,  FUKUSHIMA, Ryota

    IPC分类号： C07C215/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C07F7/22 ,  C23C16/18 ,  C23C16/40

    摘要： The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:

    where R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 3 and R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R 6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and "n" represents the valence of the atom represented by M, provided that when M represents a copper atom, R 3 and R 4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R 5 represents a hydrogen atom.

    METHOD FOR PRODUCING YTTRIUM OXIDE-CONTAINING FILM
    9.
    发明公开
    METHOD FOR PRODUCING YTTRIUM OXIDE-CONTAINING FILM 审中-公开

    公开(公告)号：EP4039847A1

    公开(公告)日：2022-08-10

    申请号：EP20873107.5

    申请日：2020-09-24

    申请人： ADEKA CORPORATION

    发明人： NISHIDA, Akihiro ,  YAMASHITA, Atsushi

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L21/316

    摘要： The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including:
    a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and
    a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.