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    VAPOR DEPOSITION DEVICE AND METHOD FOR PRODUCING EPITAXIAL WAFER
    4.
    发明公开
    VAPOR DEPOSITION DEVICE AND METHOD FOR PRODUCING EPITAXIAL WAFER 审中-公开

    公开(公告)号：EP4219804A1

    公开(公告)日：2023-08-02

    申请号：EP21871919.3

    申请日：2021-06-10

    申请人： Epicrew Corporation

    发明人： OKABE, Akira

    IPC分类号： C30B25/12 ,  H01L21/205 ,  C30B29/06 ,  C23C16/24 ,  C23C16/455

    摘要： A vapor phase growth system is capable of adequately ensuring space for moving a substrate transfer member when loading/unloading a substrate to and from a susceptor even if a configuration is employed in which the space between the bottom surface of the ceiling plate of a reaction vessel and a set of the susceptor and a preheating ring is narrowed. A process chamber includes a susceptor lifting mechanism that raises and lowers the susceptor between a first position and a second position. With the susceptor in the first position, the top surface of the susceptor is above the bottom surface of the preheating ring, and a source gas distribution space with a predetermined height dimension is secured between the top surface of the susceptor and the bottom surface of the ceiling plate of the reaction vessel body. With the susceptor in the second position, the top surface of the susceptor is located below the bottom surface of the preheating ring, and a substrate loading/unloading space, which has a greater height dimension than that of the source gas distribution space, is secured between the top surface of the susceptor and the bottom surface of the preheating ring.

    COATING APPARATUS, METHOD AND SYSTEM, SOLAR CELL, MODULE, AND POWER GENERATION SYSTEM
    5.
    发明公开
    COATING APPARATUS, METHOD AND SYSTEM, SOLAR CELL, MODULE, AND POWER GENERATION SYSTEM 审中-公开

    公开(公告)号：EP4191688A1

    公开(公告)日：2023-06-07

    申请号：EP21854146.4

    申请日：2021-04-12

    申请人： Suzhou Maizheng Technology Co. Ltd

    发明人： ZHOU, Jian ,  CAO, Xinmin ,  CHEN, Chen ,  WANG, Dengzhi ,  WANG, Chao

    IPC分类号： H01L31/20 ,  H01L31/0747 ,  C23C16/54 ,  C23C16/24

    摘要： Provided are a heterojunction solar cell coating apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell coating apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity (1), a preheating cavity (2), intrinsic process cavities (3), doping process cavities (4) and an unloading cavity (5) that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve (9). At least two intrinsic process cavities (3) are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity (4) is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity (2) comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere. The apparatus combines control over the gas proportion and the pressure, can process a plurality of solar cells at the same time, and improves the overall processing efficiency.

    EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER
    6.
    发明公开
    EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER 审中-公开

    公开(公告)号：EP4089720A1

    公开(公告)日：2022-11-16

    申请号：EP20911506.2

    申请日：2020-11-24

    申请人： Shin-Etsu Handotai Co., Ltd.

    发明人： SUZUKI, Katsuyoshi ,  SUZUKI, Atsushi

    IPC分类号： H01L21/205 ,  C30B29/06 ,  C23C16/02 ,  C23C16/24

    摘要： The present invention is a method for manufacturing an epitaxial wafer by forming a single crystal silicon layer on a wafer containing a group IV element including silicon, the method including the steps of: removing a natural oxide film on a surface of the wafer containing the group IV element including silicon in an atmosphere containing hydrogen; forming an oxygen atomic layer by oxidizing the wafer after removing the natural oxide film; and forming a single crystal silicon by epitaxial growth on the surface of the wafer after forming the oxygen atomic layer, where a planar density of oxygen in the oxygen atomic layer is set to 4×10 14 atoms/cm 2 or less. This provides a method for manufacturing an epitaxial wafer having an epitaxial layer of good-quality single crystal silicon while also allowing the introduction of an oxygen atomic layer in an epitaxial layer stably and simply.

    VERFAHREN ZUM HERSTELLEN VON HALBLEITERSCHEIBEN MIT EPITAKTISCHER SCHICHT IN EINER KAMMER EINES ABSCHEIDEREAKTORS
    8.
    发明公开
    VERFAHREN ZUM HERSTELLEN VON HALBLEITERSCHEIBEN MIT EPITAKTISCHER SCHICHT IN EINER KAMMER EINES ABSCHEIDEREAKTORS 审中-公开

    公开(公告)号：EP4056740A1

    公开(公告)日：2022-09-14

    申请号：EP21161684.2

    申请日：2021-03-10

    申请人： Siltronic AG

    发明人： Edmaier, Walter ,  Hecht, Hannes ,  Lauer, Michael ,  Lichtenegger, Korbinian

    IPC分类号： C30B25/08 ,  C30B29/06 ,  C23C16/44 ,  C23C16/24 ,  C30B25/20

    摘要： Verfahren zum Herstellen von Halbleiterscheiben mit epitaktischer Schicht in einer Kammer eines Abscheidereaktors einer Anlage, umfassend
    das wiederholte Abscheiden einer epitaktischen Schicht auf einer Substratscheibe in der Kammer des Abscheidereaktors, wobei eine erste Anzahl von Halbleiterscheiben mit epitaktischer Schicht entsteht, und währenddessen
    das Konditionieren einer Ersatzkammer des Abscheidereaktors außerhalb der Anlage durch Spülen der Ersatzkammer mit einem Spülgas;
    das Unterbrechen des wiederholten Abscheidens einer epitaktischen Schicht auf einer Substratscheibe;
    das Ersetzen der Kammer durch die Ersatzkammer; und
    das Fortsetzen des wiederholten Abscheidens einer epitaktischen Schicht auf einer Substratscheibe in der Ersatzkammer des Abscheidereaktors, wobei eine zweite Anzahl von Halbleiterscheiben mit epitaktischer Schicht entsteht.