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    Night-vision sensor and apparatus
    5.
    发明授权
    Night-vision sensor and apparatus 有权

    公开(公告)号：EP2835830B1

    公开(公告)日：2018-10-17

    申请号：EP14191472.1

    申请日：2010-08-31

    申请人： Intevac, Inc.

    发明人： Aebi, Verle W.

    IPC分类号： H01L27/146 ,  H01L31/109 ,  H01L31/0304

    CPC分类号： H01L27/14643 ,  H01L27/1464 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/109 ,  Y02E10/544

    摘要： The invention relates to a sensor for night vision applications, comprising an InP substrate (500); an InP buffer layer (510) fabricated on one surface of the InP substrate; an InGaAsP absorption layer (515) fabricated on the InP buffer layer; an InP cap layer (525) formed over the absorption layer; wherein the InGaAsP absorption layer limits long wavelength response cutoff to between 1.25 to 1.4µm wavelength. The invention further relates to a night vision apparatus, comprising a sensor that limits long wavelength response cutoff to between 1.25 to 1.4µm wavelength and an imaging chip positioned behind and connected to the sensor and comprising an array having 1600 x 1200 pixels at a 10.8 micron pixel pitch and operating at 60Hz.

    INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR
    6.
    发明公开
    INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
    EXTERNER INFRAROT-LICHTEMISSIONSDETEKTOR

    公开(公告)号：EP2529417A4

    公开(公告)日：2017-05-03

    申请号：EP11737739

    申请日：2011-01-28

    申请人： HOWARD UNIV

    发明人： BATES CLAYTON W JR

    IPC分类号： H01L31/109 ,  H01J1/34 ,  H01J31/49 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/108

    CPC分类号： H01L31/035209 ,  H01J1/34 ,  H01J31/49 ,  H01L31/108

    摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.

    摘要翻译： 红外外部光发射检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括嵌入有形成肖特基势垒的纳米颗粒的掺杂硅; 并且p层是p型金刚石膜。 纳米颗粒可以是平均粒径为约5-10nm的约20-30个原子百分比金属颗粒（例如银）。 p层可以具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，并且优选地约3μm厚。 掺杂的硅可以掺杂选自由磷和锑组成的列表中的元素。

    INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR
    10.
    发明公开
    INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
    外部红外线分析仪

    公开(公告)号：EP2529417A2

    公开(公告)日：2012-12-05

    申请号：EP11737739.0

    申请日：2011-01-28

    申请人： Howard University

    发明人： BATES, Clayton W., Jr.

    IPC分类号： H01L31/109 ,  H01L31/09

    CPC分类号： H01L31/035209 ,  H01J1/34 ,  H01J31/49 ,  H01L31/108

    摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20 - 30 atomic percentage metal particles (such as silver) having an average particle size of about 5 - 10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 µm to 10 µm thick, and preferably about 3 µm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.

    摘要翻译： 红外外部发光检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括掺杂有形成肖特基势垒的纳米颗粒的掺杂硅; p层是p型金刚石膜。 纳米颗粒可以是平均粒径约5-10nm的约20-30原子百分比的金属颗粒（如银）。 p层可以具有具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，优选约3μm厚。 掺杂的硅可掺杂有选自磷和锑的元素。