公开(公告)号：JPH11345807A

公开(公告)日：1999-12-14

申请号：JP681299

申请日：1999-01-13

Applicant: SHARP KK ,  SHARP MICROELECT TECH INC

Inventor： HSU SHENG TENG ,  YANG HONGNING ,  DAVID RUSSELL EVANS ,  NGUYEN TUE ,  YAN-JUN MA

IPC: H01L21/314 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C16/30 ,  C23C16/44 ,  C23C16/458 ,  H01L21/70

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration in the quality of IC products by amending internally caused stress of a deposited IC film in an IC manufacturing process. SOLUTION: A method for canceling an intrinsic tension in a deposited film is provided. A wafer substrate is fixed to a wafer chuck with a bent surface. When the surface of the chuck has a projected shape, a tensile stress is applied inwardly to a deposited film. After the wafer is removed from the chuck, the deposited film generates a compressive stress. When the chuck has a recessed surface, compressive stress is applied inwardly to the deposited film. After the wafer is removed from the chuck, the deposited film generates tensile stress. In this case, the compressive stress applied to the film makes contribution to the thermal stability of the film with internally caused tensile stress. In addition, pressure load can be used for increasing adhesive strength between films or preventing warpage in film during annealing.

公开(公告)号：JP2990497B2

公开(公告)日：1999-12-13

申请号：JP32817296

申请日：1996-12-09

Applicant: ERU JII SEMIKON CO LTD

Inventor： YON CHAN KIMU

IPC: H01L21/70 ,  H01L21/28 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092

公开(公告)号：JPH10312309A

公开(公告)日：1998-11-24

申请号：JP12259697

申请日：1997-05-13

Applicant: TOSHIBA MICRO ELECTRONICS ,  TOSHIBA CORP

Inventor： KANBARA SHIRAHO

IPC: G01R31/28 ,  G06F11/22 ,  G06F17/50 ,  H01L21/70 ,  H01L21/82

Abstract: PROBLEM TO BE SOLVED: To shorten a compiling processing time accompanying a change of a probe node and to improve the operation efficiency of circuit debugging by securing a specific number of I/Os for prove nodes by programmable gate arrays(FPGA) and dividing an ASIC circuit according to the number of the I/Os. SOLUTION: An I/O 18a of an FPGA 12 is connected to an external terminal 20 for a probe node, an I/O 18b is used for a connection between FPGAs 12, and an I/O 18c is connected to an external terminal 22 for a target system, thereby enabling the connection with the target system 23. Net list data on ASIC circuit constitution obtained in an initial design stage are read in a control and evaluation device 26 to generate data to be assigned to the FPGAs 12. Then the control and evaluation device 26 generates arrangement and wiring data by the FPHGAs 12 and repeats this until data for connecting the final internal net in the FPGAs 12 to the I/O 18a for the probe is generated.

公开(公告)号：JP2598039B2

公开(公告)日：1997-04-09

申请号：JP24573187

申请日：1987-09-29

IPC: G06K19/067 ,  G08B13/24 ,  H01L21/70 ,  H01L27/01 ,  H05K1/16 ,  H05K3/04

公开(公告)号：JP2583431B2

公开(公告)日：1997-02-19

申请号：JP30884187

申请日：1987-12-08

Applicant: HONEYWELL INC

Inventor： JEEMUZU EI SHUETSU

IPC: H01L31/0248 ,  H01L21/28 ,  H01L21/70 ,  H01L23/14 ,  H01L23/498 ,  H01L27/01 ,  H01L31/08 ,  H01L43/02 ,  H01L43/12 ,  H01L49/02

公开(公告)号：JPH0883941A

公开(公告)日：1996-03-26

申请号：JP12590595

申请日：1995-04-26

Applicant: SIEMENS AG

Inventor： TOOMASU TSUETORAA

IPC: G12B3/00 ,  B81B3/00 ,  B81C1/00 ,  G01L1/14 ,  G01P15/08 ,  G01P15/125 ,  H01H1/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/70 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/84 ,  H01L49/00 ,  H02N1/00 ,  H03H9/24 ,  H01L21/78

Abstract: PURPOSE: To provide a microsystem having an integrated circuit and a micromechanism device without an additional process, which starts from the formation of the integrated circuit to extend to the formation of the micromechanism device, and to provide a method, which can simultaneously form the integrated circuit of the microsystem and the micromechanism device. CONSTITUTION: At least each of the part of a fixed micromechanism structure A and the like and moving micromechanism structures R and the like of a micromechanism device is formed of a conductive layer 7, and this layer 7 is at the same time used as the metallized part of an integrated circuit. An insulating layer under the layer 7 does not exist in the ranges of the moving micromechanism structures. As a result, the moving micromechanism structures are freely and elastically movable.

公开(公告)号：JPH0830575A

公开(公告)日：1996-02-02

申请号：JP16540794

申请日：1994-07-18

Applicant: KAWASAKI STEEL CO

Inventor： YONEDA HIDEKI

IPC: G06F15/78 ,  H01L21/70 ,  H01L21/822 ,  H01L27/04

Abstract: PURPOSE:To suppress the generation of noise and variation in power supply at the time of switching an address signal by counting the number of non- coincident bits between 1st and 2nd logic signals outputted from a register and controlling the register based upon the count value. CONSTITUTION:A comparator 14 compares a previously set prescribed number with the numbers of non-coincident bits between 1st and 2nd address signals A'15 to A'0, A15 to A0. When the number of non-coincident bits exceeds the prescribed value, the comparator 14 outputs an 'H' level signal to an output terminal E0. When the level of a signal inputted to an input terminal W of a control part 15 is an 'L' level, the control part 15 simultaneously outputs control signals for instructing the storage of the 2nd address signals A15 to A8, A7 to A0 in respective registers 11a, 11b from its output terminals OUT1, OUT2, and when the inputted signal is an 'H' level, sequentially outputs control signals for instructing the storage of the 2nd address signals A15 to A8, A7 to A0 in the registers 11a, 11b at the shifted timing.

公开(公告)号：JPH0822991A

公开(公告)日：1996-01-23

申请号：JP15621094

申请日：1994-07-07

Applicant: TOSHIBA CORP

Inventor： UENO YOSHIHIRO ,  AMAI TSUTOMU ,  SAMATA SHUICHI

IPC: H01L21/70 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/316 ,  H01L21/322

Abstract: PURPOSE:To reduce microroughness and prevent the change of structure and electric characteristics of an element formed in a semiconductor device. CONSTITUTION:In the manufacturing method of a semiconductor device having a pre-oxidation process wherein impurities on the silicon wafer surface are eliminated by eliminating an oxide film after the oxide film is formed on a silicon wafer, the oxide film in the pre-oxidation process is formed in an oxidizing atmosphere containing O2 gas, H2 gas and GeH4 gas. Since the GeH4 gas is contained in the oxidizing atmosphere, the softening point of the silicon wafer can be decreased, Thereby microroughness on the silicon wafer surface can be reduced. Since the pre-oxidation process can be performed at a low temperature in a short time, structure and electric characteristics of an element formed in a semiconductor device are not changed.

公开(公告)号：JPH07123002A

公开(公告)日：1995-05-12

申请号：JP27024993

申请日：1993-10-28

Applicant: HITACHI LTD

Inventor： YAMAZAKI MATSUO ,  ANDO MASAAKI

IPC: H01L21/70 ,  H03K5/1252 ,  H03M1/08 ,  H03M1/66

Abstract: PURPOSE:To eliminate a glich component of an output of the circuit without decreasing a conversion time of a D/A converter by outputting a difference signal between a signal representing the result of correct extraction of the glich component of the output of the D/A converter and an output signal of the D/A converter. CONSTITUTION:An amplitude of a glich signal (j) is in matching with an amplitude of glich of a basic signal (f) at an AC amplifier 7. Then a voltage limiter circuit 8 eliminates a differentiation waveform of a glich convergence area. When an offset circuit 11 adjusts an output offset voltage of an inverted DC amplifier 10 finally, an output signal (e) whose glich component is eliminated is obtained at an output of the glich elimination circuit 1. Although a maximum value of a settling time for a differentiation waveform attended with a step change in a conversion signal (b) converted from the output signal (e) obtained in this way at a D/A converter 5 is nearly twice the data conversion time of the D/A converter 5, an excellent step waveform without any glich component is obtained.

公开(公告)号：JPH06230063A

公开(公告)日：1994-08-19

申请号：JP3420793

申请日：1993-01-29

Applicant: HIOKI ELECTRIC WORKS

Inventor： HORI SEIICHI

IPC: G01R31/02 ,  G01R31/28 ,  H01L21/70

Abstract: PURPOSE:To reliably detect a part having a microscoipc height. CONSTITUTION:The first contact probe 20 is installed movably freely in a front probe case 22. The front probe case 22 is composed of an electrically conductive material. An insulating collar 26 is installed on the rear end side of the first contact probe 20. The second contact probe 21 is installed movably freely in a rear probe case 23. The rear probe case 23 is composed of an insulating material. The first and the second contact probes 20 and 21 are projected to the part side by a coil spring 25. Normal close type contact points b1 and b2 are composed of the rear end of the front probe case 22 and the tip of the second contact probe. Thereby, even if a stroke quantity of the contact probe 20 is small, the normal close contact points can be opened reliably. Thereby, a part having a microscopic height can be detected reliably.