公开(公告)号：JP4725427B2

公开(公告)日：2011-07-13

申请号：JP2006157873

申请日：2006-06-06

Applicant: Jsr株式会社

Inventor： 信司 松村 ,  大輔 清水 ,  敏之 甲斐

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/38 ,  C08F220/58 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method suitable for fine pattern formation with an electron beam, X-ray or extreme ultraviolet radiation, and a radiation-sensitive resin composition and a radiation-sensitive acid generation group-containing resin for use in the same. SOLUTION: In this pattern forming method, a resist pattern is formed by generating an acid from a radiation-sensitive acid generation group-containing resin contained as a resin component in a radiation-sensitive resin composition by irradiation with an actinic ray or radiation to increase the solubility of the radiation-sensitive acid generation group-containing resin in a developer. This radiation-sensitive resin composition contains as a resin component only an acid generation group-containing resin which comprises a repeating unit containing an acid generation group capable of generating an acid upon irradiation with an actinic ray or radiation and a non-acid-dissociative repeating unit. COPYRIGHT: (C)2008,JPO&INPIT

公开(公告)号：JP5578170B2

公开(公告)日：2014-08-27

申请号：JP2011506041

申请日：2010-03-23

Applicant: Jsr株式会社

Inventor： 晃太 西野 ,  研 丸山 ,  大輔 清水 ,  敏之 甲斐

IPC: G03F7/004 ,  C08F220/38 ,  G03F7/039

CPC classification number: G03F7/0392 ,  C08F12/20 ,  C08F12/24 ,  C08F212/14 ,  C08F220/18 ,  C08F220/38 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  C08F2220/1883 ,  C08F220/22 ,  C08F2220/382

公开(公告)号：JP5267126B2

公开(公告)日：2013-08-21

申请号：JP2008533111

申请日：2007-08-28

Applicant: Jsr株式会社

Inventor： 信司 松村 ,  大輔 清水 ,  敏之 甲斐

IPC: G03F7/004 ,  C07C381/12 ,  G03F7/039

CPC classification number: G03F7/004 ,  C07C309/12 ,  C07C381/12 ,  G03F7/0045

公开(公告)号：JP5262650B2

公开(公告)日：2013-08-14

申请号：JP2008310863

申请日：2008-12-05

Applicant: Jsr株式会社

Inventor： 研 丸山 ,  敏之 甲斐

IPC: G03F7/32 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming resist patterns capable of highly precisely and stably forming fine patterns having excellent nano-edge roughness. SOLUTION: The method for forming the resist patterns includes selectively exposing resist films formed on a substrate and having a film thickness of ≤50 nm and developing the resist film by using a developing agent for forming the resist patterns being aqueous solution containing an organic solvent. COPYRIGHT: (C)2010,JPO&INPIT

公开(公告)号：JP5256953B2

公开(公告)日：2013-08-07

申请号：JP2008235209

申请日：2008-09-12

Applicant: Jsr株式会社

Inventor： 大輔 清水 ,  研 丸山 ,  敏之 甲斐

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

公开(公告)号：JP4645789B2

公开(公告)日：2011-03-09

申请号：JP2001262027

申请日：2001-08-30

Applicant: Jsr株式会社

Inventor： 大吾 一戸 ,  敏之 甲斐

IPC: G03F7/038 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/038 ,  Y10S430/106

Abstract: A negative type radiation sensitive resin composition comprising: (A) an alkali-soluble resin containing the polymerized unit of a polymerizable unsaturated compound having a phenolic hydroxyl group and having a weight average molecular weight of 4,100 to 20,000 and a weight average molecular weight/number average molecular weight ratio of more than 1.25 to not more than 2.00; (B) a radiation sensitive acid generating agent; and (C) an acid crosslinking agent. This composition can be used with an alkali developer having a normal concentration, can form a high-resolution rectangular line-and-space resist pattern, and provides a chemically amplified negative type resist which is free from a resist pattern defect (bridging or chip line) after development and has excellent sensitivity, developability and dimensional fidelity.

公开(公告)号：JP4103523B2

公开(公告)日：2008-06-18

申请号：JP2002282756

申请日：2002-09-27

Applicant: Jsr株式会社

Inventor： 敏之 甲斐 ,  覚 西山

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

公开(公告)号：JP5525214B2

公开(公告)日：2014-06-18

申请号：JP2009200930

申请日：2009-08-31

Applicant: Jsr株式会社 ,  学校法人神奈川大学

Inventor： 忠臣 西久保 ,  宏人 工藤 ,  伸光 新名 ,  努 下川 ,  敏之 甲斐 ,  研 丸山

IPC: C07C41/30 ,  C07B61/00 ,  C07C43/21 ,  C07C43/23

公开(公告)号：JP5365424B2

公开(公告)日：2013-12-11

申请号：JP2009200955

申请日：2009-08-31

Applicant: Jsr株式会社

Inventor： 努 下川 ,  敏之 甲斐 ,  研 丸山

IPC: G03F7/038 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive resin composition capable of stably forming a chemically amplified negative resist film which is effectively sensitive to EB (electron beam) or EUV (extreme ultraviolet radiation), is excellent in roughness, etching resistance and sensitivity, and capable of stably forming a high-definition fine pattern. SOLUTION: The negative radiation-sensitive resin composition comprises: an arene-based compound (A) represented by general formula (1) or (2) (wherein a plurality of Rs each independently denote H or 1-8C alkyl, provided that at least one of the plurality of Rs is 1-8C alkyl; and a plurality of Xs each independently denote 1-8C alkylene); an acid crosslinking agent (B); an acid generator (C); an acid diffusion-controlling agent (D); and a solvent (E). COPYRIGHT: (C)2011,JPO&INPIT

公开(公告)号：JP5136417B2

公开(公告)日：2013-02-06

申请号：JP2008527723

申请日：2007-07-27

Applicant: Jsr株式会社

Inventor： 光 杉田 ,  信司 松村 ,  大輔 清水 ,  敏之 甲斐 ,  努 下川

IPC: G03F7/38 ,  C08F212/04 ,  C08F232/08 ,  C08G77/04 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/265