公开(公告)号：JP4274649B2

公开(公告)日：2009-06-10

申请号：JP28705799

申请日：1999-10-07

Applicant: 株式会社日立製作所

Inventor： 修 小室 ,  文夫 水野 ,  二大 笹嶋

IPC: H01L21/027 ,  H01L21/66 ,  B32B3/00 ,  G01B11/00 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  G03F7/20

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

公开(公告)号：JP2007335083A

公开(公告)日：2007-12-27

申请号：JP2006161783

申请日：2006-06-12

Applicant: Hitachi Ltd ,  株式会社日立製作所

Inventor： KASAI HIROTO ,  KANEKO YUTAKA

IPC: H01J37/295 ,  G01N23/04

CPC classification number: H01J37/147 ,  G03H5/00 ,  H01J37/26 ,  H01J2237/1514 ,  H01J2237/2487 ,  H01J2237/2614

Abstract: PROBLEM TO BE SOLVED: To solve a problem in which an electron beam holography observation using a transmission type electron microscope has a complicated condition search of an electron optical system for achieving a required space resolution, and takes a long time for a person who is not familiar with the operation of an electron microscope.
SOLUTION: In addition to a basic electron microscope, this device comprises means for inputting a required space resolution in a holography observation, a calculating device for calculating an electron beam bi-prism and a specimen position for realizing a required space resolution from an input value and a parameter unique to the device, and a mechanism for moving these two positions for realizing the found calculation results.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题为了解决使用透射型电子显微镜的电子束全息观察具有用于实现所需的空间分辨率的电子光学系统的复杂条件搜索并且对于人来说需要很长时间的问题 谁不熟悉电子显微镜的操作。 解决方案：除了基本的电子显微镜之外，该装置包括用于在全息观察中输入所需的空间分辨率的装置，用于计算电子束双棱镜的计算装置和用于实现所需的空间分辨率的样本位置 输入值和设备唯一的参数，以及用于移动这两个位置以实现所找到的计算结果的机构。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007256125A

公开(公告)日：2007-10-04

申请号：JP2006081882

申请日：2006-03-24

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： HONDA TOSHIFUMI ,  HIRAI TOMOHIRO

IPC: G01N23/225 ,  H01L21/66

CPC classification number: G01R31/307 ,  G01R31/2884 ,  H01J37/265 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/2487 ,  H01J2237/2594 ,  H01J2237/2817 ,  H01J2237/30416

Abstract: PROBLEM TO BE SOLVED: To solve the problem, wherein the high magnification image of a voltage contrast change part is photographed with respect to flaws, which cause voltage contrast changes in conventional methods for automatic photographing of the high magnification image of flaws in an electron microscope for reviewing the flaws of a semiconductor wafer and that it is difficult to observe the flaws themselves to bring about the voltage contrast change.
SOLUTION: The shape change region, adjacent to the voltage contrast change, is calculated by taking two kinds of images of an image, which is hard to be formed into an image easy to develop a voltage contrast, on the basis of the energy of secondary electrons to be detected and set as flaw position to automatically image a high magnification image.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题为了解决这样的问题，其中相对于瑕疵拍摄电压对比度变化部分的高倍率图像，这导致了用于自动拍摄高倍率图像的缺陷的常规方法中的电压对比度变化 用于检查半导体晶片的缺陷的电子显微镜，并且难以观察缺陷本身以产生电压对比度变化。 解决方案：通过拍摄难以形成为容易产生电压对比度的图像的图像的两种图像来计算与电压对比度变化相邻的形状变化区域，基于 要检测的二次电子的能量并设置为缺陷位置以自动成像高倍率图像。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007147366A

公开(公告)日：2007-06-14

申请号：JP2005340268

申请日：2005-11-25

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： NAGATOMO WATARU ,  MIYAMOTO ATSUSHI ,  MATSUOKA RYOICHI

IPC: G01N23/225 ,  G01B15/04 ,  H01L21/027

CPC classification number: H01J37/28 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70525 ,  G03F7/70625 ,  G06T7/0006 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/265 ,  H01J37/3174 ,  H01J2237/216 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing technique which dispenses with the data conversion matched with the respective processes required heretofore, capable of easily selecting the effective data utilizable in the respective processes from possessed data by collectively controlling the possessed data, performs correction of photographic recipe on the basis of time series data, even when there are temporal fluctuations in the shape of a forming pattern and can form a stably measurable photographic recipe. SOLUTION: In the shape evaluation device of the semiconductor pattern that uses a length-measuring SEM, the coordinates system between various kinds of data is allowed to correspond, in order to collectively control various kinds of data stored in a database 301 and a part of or all of various kinds of the data are selected arbitrarily, and the selected data is utilized to form the photographing recipe for observing the semiconductor pattern in the length measuring SEM. Furthermore, various kinds of the data are controlled in a time-series manner, and the photographing recipe is corrected when there are the fluctuations of the pattern shape. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种半导体制造技术，其省去了与迄今为止所需的相应处理相匹配的数据转换，能够通过集体控制所拥有的数据来容易地从拥有的数据中选择可用于各个处理的有效数据， 即使在形成图案的形状存在时间波动的情况下，也可以基于时间序列数据进行照相配方的校正，并能够形成稳定的照相配方。 解决方案：在使用长度测量SEM的半导体图案的形状评估装置中，允许各种数据之间的坐标系对应，以便共同控制存储在数据库301中的各种数据， 任意地选择各种数据的一部分或全部，并且使用所选择的数据来形成用于在长度测量SEM中观察半导体图案的拍摄配方。 此外，以时间序列方式控制各种数据，并且当存在图案形状的波动时校正拍摄配方。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007003212A

公开(公告)日：2007-01-11

申请号：JP2005180457

申请日：2005-06-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MIYAMOTO ATSUSHI ,  NAGATOMO WATARU ,  MATSUOKA RYOICHI ,  MOROKUMA HIDETOSHI ,  SUTANI TAKUJI

IPC: G01B15/04 ,  G01N23/225 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/153 ,  H01J37/21 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/24592 ,  H01J2237/2487 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a formation device of an imaging recipe and its method capable of optimizing by teaching, a selection rule for forming automatically the imaging recipe, in a SEM device or the like. SOLUTION: This formation device for forming the imaging recipe for performing SEM observation of a semiconductor pattern by using a scanning electron microscope is characterized by being equipped with a database 805 for inputting layout information of the semiconductor pattern with a low-powered visual field and storing it, and an imaging recipe formation part 806, 809 for forming automatically the imaging recipe following an automatic formation algorithm including the selection rule for selecting an imaging point optimized by teaching based on the layout information of the semiconductor pattern stored in the database. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种成像配方的形成装置及其能够通过教导进行优化的方法，用于在SEM装置等中自动形成成像配方的选择规则。 解决方案：用于形成用于通过扫描电子显微镜进行半导体图案的SEM观察的成像配方的形成装置的特征在于配备有用于以低功率视觉输入半导体图案的布局信息的数据库805 并且存储它;以及成像配方形成部分806,809，用于根据自动形成算法自动形成成像配方，该自动形成算法包括基于存储在数据库中的半导体图案的布局信息来选择通过教学优化的成像点的选择规则 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006319105A

公开(公告)日：2006-11-24

申请号：JP2005139725

申请日：2005-05-12

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： KITAMURA YUICHI ,  SUGIURA NAOTO

IPC: H01L21/302 ,  B23K15/00 ,  B23K101/42

CPC classification number: H01J37/304 ,  H01J37/222 ,  H01J37/3056 ,  H01J2237/221 ,  H01J2237/2487 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31742 ,  H01L22/26

Abstract: PROBLEM TO BE SOLVED: To bore a trench having the extremely uniform thickness of a residual silicon film by controlling accurately a trench processing even when variations are existent in a focused ion beam or no pn-junction is existent in a silicon interface.
SOLUTION: In a semiconductor processing method, secondary-electron images obtained by an electron beam 8a are sensed by a secondary-electron and secondary-ion sensor 9 while etching a silicon substrate 1 from the rear surface of a semiconductor chip by a focused ion beam 6a. There is determined as a processing end point the time point whereat the electron beam 8a has been so transmitted through the silicon substrate 1 that an image processor 10 senses the contrast of the secondary-electron images of a separation layer 5 and a polysilicon layer 2, etc. The setting of the accelerating voltage of the electron beam 8a is so altered at this time as to obtain the arbitrary thickness of a residual silicon film.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在聚焦离子束中存在变化或者在硅界面中不存在pn结的情况下，通过精确地控制沟槽处理来钻孔具有非常均匀的残余硅膜厚度的沟槽。 解决方案：在半导体处理方法中，通过电子束8a获得的二次电子图像由二次电子和二次离子传感器9检测，同时通过一个半导体芯片从半导体芯片的后表面蚀刻硅衬底1 聚焦离子束6a。 将处理终点确定为电子束8a如此透过硅衬底1的时间点，图像处理器10检测分离层5和多晶硅层2的二次电子图像的对比度， 此时电子束8a的加速电压的设定如此改变，以获得剩余硅膜的任意厚度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006164861A

公开(公告)日：2006-06-22

申请号：JP2004357539

申请日：2004-12-10

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MATSUMOTO TAKAO ,  TAKAGUCHI MASANARI

IPC: H01J37/295 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  G03H5/00 ,  H01J37/023 ,  H01J37/244 ,  H01J2237/1502 ,  H01J2237/1514 ,  H01J2237/225 ,  H01J2237/228 ,  H01J2237/2447 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/2487 ,  H01J2237/2614 ,  H01J2237/2802 ,  H01J2237/2803

Abstract: PROBLEM TO BE SOLVED: To provide a scanning interference electron microscope which facilitates setting and adjustment and has a high sensitivity.
SOLUTION: The scanning interference electron microscope improves a detection efficiency of electron beam interference fringes and enables users to observe electric and magnetic information easily in a microdomain of a specimen as a scan image of a high S/N ratio under optimum conditions. Thereby, the following problems in detecting interference fringes by the conventional detection technique can be solved: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) The detection efficiency of electron beams is low.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种便于设置和调节并具有高灵敏度的扫描干涉电子显微镜。 解决方案：扫描干涉电子显微镜提高了电子束干涉条纹的检测效率，使用户能够在最佳条件下将样品微区域中的电磁信息容易地视为高S / N比的扫描图像。 因此，可以解决通过常规检测技术检测干涉条纹的以下问题：（1）设置和调整是复杂且难以进行的; （2）相位图像和振幅图像不能同时显示; （3）电子束的检测效率低。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005203771A

公开(公告)日：2005-07-28

申请号：JP2005000244

申请日：2005-01-04

Applicant: Applied Materials Inc ,  アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated

Inventor： MURRELL ADRIAN ,  HARRISON BERNARD F ,  EDWARDS PETER IVOR TUDOR ,  KINDERSLEY PETER ,  LOWRIE CRAIG ,  BANKS PETER MICHAEL ,  SAKASE TAKAO ,  FARLEY MARVIN ,  SATOH SHU ,  RYDING GEOFFREY

IPC: H01J37/317 ,  G01N23/00 ,  H01J37/304 ,  H01L21/00 ,  H01L21/26 ,  H01L21/265 ,  H01L21/42

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/24507 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764

Abstract: PROBLEM TO BE SOLVED: To provide a method for implanting ions capable of maintaining dose uniformity by controlling relative movement between a substrate and a beam for ion implantation.
SOLUTION: An ion implanter carries out two-dimensional scanning of a substrate relative to a beam for ion implantation so that the beam draws a raster of scan line on the substrate. A beam current is measured at a turnaround point apart from the substrate and a current value is used to control a subsequent fast scan speed so as to compensate for the effect of a variation in beam current on dose uniformity in the slow scan direction. The scanning may generates a raster of non-intersecting uniformly spaced parallel scan lines and the space between the lines is selected to secure appropriate dose uniformity.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供通过控制用于离子注入的衬底和束之间的相对运动来注入能够保持剂量均匀性的离子的方法。 解决方案：离子注入机相对于用于离子注入的光束执行衬底的二维扫描，使得光束在衬底上绘制扫描线的光栅。 在离开衬底的周转点处测量射束电流，并且使用电流值来控制随后的快速扫描速度，以补偿束电流的变化对慢扫描方向上的剂量均匀性的影响。 扫描可以产生不相交的均匀间隔的平行扫描线的光栅，并且选择线之间的空间以确保适当的剂量均匀性。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP3619132B2

公开(公告)日：2005-02-09

申请号：JP2000260877

申请日：2000-08-25

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立製作所

Inventor： 修 小室 ,  謙一 西潟 ,  勝明 阿部

IPC: G01N23/225 ,  G01N23/04 ,  G21K7/00 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01N23/04 ,  G06T1/0007 ,  G06T2207/30148 ,  H01J37/265 ,  H01J2237/24585 ,  H01J2237/2487 ,  H01J2237/2817

Abstract: In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.

公开(公告)号：JP2004265629A

公开(公告)日：2004-09-24

申请号：JP2003039081

申请日：2003-02-18

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： AIDA KAZUO ,  TAKAOKA OSAMU ,  KOSAKAI TOMOKAZU

IPC: H01J37/317 ,  H01J37/26 ,  H01J37/28 ,  H01J37/30 ,  H01L21/302

CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J2237/244 ,  H01J2237/24475 ,  H01J2237/2487 ,  H01J2237/2826 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To execute ion beam machining by allowing a reference object to be always recognized in process of the machining to carry out accurate drift correction even when a minute hole or a minute pattern is used as the reference object in correcting the drift of an irradiation position of an ion beam using the reference object.
SOLUTION: When a region 24 including a minute reference hole 23 previously formed by an ion beam in a place other than a machining region 25 in a shading film 21 on a glass substrate 22, the position 23 of the hole is memorized by detecting a secondary ion signal of the same atomic species as entered ions injected into the substrate instead of detecting the secondary ion signal of atomic species included in a base film. The region 24 including the hole formed in process of machining is scanned to detect the position 26 of the hole by detecting the secondary ion signal of the same atomic species as the entered ions again, and the moving distance of the position of the hole is found by comparing the hole position at the previous time with the hole position at this time to consider it as a drift amount.
COPYRIGHT: (C)2004,JPO&NCIPI