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Patent Agency Ranking
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公开(公告)号：JP5251849B2
公开(公告)日：2013-07-31
申请号：JP2009271886
申请日：2009-11-30
Applicant: 日立電線株式会社
CPC classification number: H01L24/27 , H01L24/29 , H01L24/73 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2924/01322 , H01L2924/13055 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT
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