Plasma processing apparatus
    6.
    发明专利

    公开(公告)号:JP5335875B2

    公开(公告)日:2013-11-06

    申请号:JP2011219069

    申请日:2011-10-03

    IPC分类号: H01L21/3065 H05H1/46

    摘要: PROBLEM TO BE SOLVED: To provide a plasma processing device capable of reducing the potential difference between an inner wall of a housing container and a grounding substrate which supports at least one of a lower electrode or an upper electrode. SOLUTION: A plasma processing device 10 comprises: a chamber 11 accommodating a glass substrate G; a lower electrode plate 23 which is arranged in the chamber 11 and served as a mounting table for mounting the glass substrate G; a shower head 12 which is arranged facing the lower electrode plate 23 and supplies processing gas into the chamber 11; a high-frequency power supply 20 which is connected to an upper electrode plate 13 of the shower head 12; a grounding board 26 which supports the lower electrode plate 23 through a lower insulation part 25 and is arranged apart from the inner wall of the chamber 11; and a short circuit plate 36 which short-circuits the grounding board 26 and the inner wall of the chamber 11. The short circuit plate 36 consists of a liner conductor whose cross section is rectangle, and is branched into at least two in mid-course. COPYRIGHT: (C)2012,JPO&INPIT