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    RESIST FOR DRY DEVELOPMENT
    8.
    发明专利
    RESIST FOR DRY DEVELOPMENT 失效

    公开(公告)号：JPH0220869A

    公开(公告)日：1990-01-24

    申请号：JP25572288

    申请日：1988-10-11

    申请人： UCB SA

    发明人： BURUNO RORANDO ,  AUGUSUTO BURANKUKEN

    IPC分类号： G03F7/023 ,  G03C1/00 ,  G03C5/00 ,  G03F7/022 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

    摘要： PURPOSE: To provide a resist having submicron resolution equal or superior to a multilayer resist system by selecting a phenolic polymer composition of the resist from mixtures of phenolic polymers or mixtures of a phenolic polymer(s) and another aromatic polymer(s). CONSTITUTION: In the production of this resist, a wide variety of polymers can be used, however, a phenolic polymer selected from among the following polymers and polymer mixtures is preferably used: (1) a condensation product of phenol, naphthol or any one of their derivatives, whose ring(s) is substituted by an alkyl or aryl group(s) or a halogen atom(s) and an aliphatic or aromatic aldehyde optionally substituted by a halogen atom(s); (2) poly(vinylphenol) having phenol groups each optionally substituted by an alkyl or aryl group(s) or a halogen atom(s); (3) a copolymer of vinylphenol and an ethylenically unsaturated compound; and (4) mixtures of plural polymers selected from the above polymers or mixtures of a polymer(s) selected from the above polymers and another aromatic polymer(s) such as polystyrene or poly(N-vinylcarbazole). Thus, high resolution and a high aspect ratio of the resist can be realized.

    RADIATION SENSITIVE RESIN COMPOSITION
    9.
    发明专利
    RADIATION SENSITIVE RESIN COMPOSITION 失效

    公开(公告)号：JPH025060A

    公开(公告)日：1990-01-09

    申请号：JP20805588

    申请日：1988-08-24

    申请人： UCB SA ,  JAPAN SYNTHETIC RUBBER CO LTD

    发明人： KOSHIBA MITSUNOBU ,  YAMADA KEIICHI ,  BOUDA YOSHIYUKI ,  BURUUNO ROORANDO ,  JIEI BANDENDERITSUSA

    IPC分类号： G03F7/023 ,  C08F8/30 ,  C08F8/34 ,  C08K5/22 ,  C08K5/28 ,  C08L101/00 ,  G03F7/004 ,  G03F7/022 ,  G03F7/36 ,  G03F7/38

    摘要： PURPOSE: To ensure high resolution and high selectivity ratio only by etching with oxygen plasma by incorporating a radiation sensitive resin and an acid generating material. CONSTITUTION: A quinonediazido radiation sensitive resin such as a condensation product of a quinonediazido compd. and an alkali-soluble resin or a mixture of a quinonediazido compd. with an alkali-soluble resin and a material (acid generating material) which generates an acid when irradiated are incorporated. The acid generating material generates an org. acid such as sulfonic acid, phosphoric acid or iodic acid when irradiated with UV, far UV, X-rays or other radiation. The absorption reaction of a silicon compd. in the irradiated part of the resultant compsn. is selectively accelerated and a high precision image can be formed by etching with high resolution, high selectivity ratio and satisfactory reproducibility.