Nitrogen-containing organic compound, resist material and pattern forming method
    9.
    发明专利
    Nitrogen-containing organic compound, resist material and pattern forming method 有权
    含氮有机化合物,耐腐蚀材料和图案形成方法

    公开(公告)号:JP2008107513A

    公开(公告)日:2008-05-08

    申请号:JP2006289489

    申请日:2006-10-25

    摘要: PROBLEM TO BE SOLVED: To provide a pattern forming material excellent in resolution and mask coverage dependency and useful in microfabrication using an electron beam or far-ultraviolet radiation. SOLUTION: The resist material contains a nitrogen-containing organic compound having a nitrogen-containing heterocycle represented by formula (1) and having a molecular weight of ≥380 as a quencher, wherein R 1 represents a 2-20C divalent substituent forming a nitrogen-containing heteroaliphatic ring or a nitrogen-containing heteroaromatic ring in combination with the nitrogen atom bonded at both ends and may contain an oxigen atom, a nitrogen atom, a sulfur atom or a halogen atom; R 2 is an alkylene group which may contain a 2-10C carbonyl group; and R 3 is a 22-50C alkyl group or acyl group which may contain a hydroxyl group, a carbonyl group, an ester group, an ether group or a cyano group. The resist material containing the nitrogen-containing organic compound provides high resolution and satisfactory mask coverage dependency, is useful in microfabrication using an electron beam or far-ultraviolet radiation, and is suitable for use as a fine pattern forming material for VLSI production. COPYRIGHT: (C)2008,JPO&INPIT

    摘要翻译: 要解决的问题:提供分辨率和掩模覆盖度依赖性优异的图案形成材料,并且在使用电子束或远紫外线辐射的微细加工中是有用的。 解决方案:抗蚀剂材料含有具有由式(1)表示的含氮杂环并且分子量≥380的作为猝灭剂的含氮有机化合物,其中R 1 表示 与两末端结合的氮原子结合形成含氮杂脂族环或含氮杂芳环的2-20C二价取代基,可含有氧原子,氮原子,硫原子或卤原子; R SP2是可以含有2-10C羰基的亚烷基; R 3是可以含有羟基,羰基,酯基,醚基或氰基的22-50℃的烷基或酰基。 包含含氮有机化合物的抗蚀剂材料提供高分辨率和令人满意的掩模覆盖依赖性,可用于使用电子束或远紫外线辐射的微细加工,并且适合用作用于VLSI生产的精细图案形成材料。 版权所有(C)2008,JPO&INPIT