Sample holder, and ion beam processing device
    3.
    发明专利
    Sample holder, and ion beam processing device 有权
    样品座和离子束处理装置

    公开(公告)号:JP2006201002A

    公开(公告)日:2006-08-03

    申请号:JP2005012253

    申请日:2005-01-20

    发明人: YAMASHITA TAKUSHI

    IPC分类号: G01N1/28 H01J37/20 H01J37/30

    摘要: PROBLEM TO BE SOLVED: To provide a sample holder and an ion beam processing device capable of preparing easily a favorable sample suitable for observation.
    SOLUTION: A sample setting part 9 has a sample bonding face 10. A shielding material guide part 12 is arranged on the sample setting part 9, and the shielding material guide part 12 is fixed in the sample setting part 9. The shielding material guide part 12 has a shielding material guide face 13. The sample bonding face 10 is positioned at a place lowered by D=40μm from the shielding material guide face 13. Since the sample bonding face 10 is formed in the position lowered by 40μm from the shielding material guide face 13 by this manner, the sample 7 is brought into a state projected frontwards by 60μm from the shielding material guide face 13 as shown in Fig.(d), when the sample 7 with 100μm of thickness is attached onto the sample bonding face 10. A shielding material 16 having about 20μm of thickness is set on the shielding material guide face 13.
    COPYRIGHT: (C)2006,JPO&NCIPI

    摘要翻译: 要解决的问题:提供能够容易地制备适合于观察的有利样品的样品架和离子束处理装置。 < P>解决方案:样品设定部9具有样品接合面10.屏蔽材料引导部12布置在样品设定部9上,屏蔽材料引导部12固定在样品设定部9中。屏蔽 材料引导部分12具有屏蔽材料导向面13.样品接合面10位于从屏蔽材料引导面13降低D =40μm的位置处。由于样品接合面10形成在距离 通过这种方式,屏蔽材料引导面13,如图(d)所示,样品7从屏蔽材料引导面13向前突出60μm的状态,当厚度为100μm的样品7附着在 样品接合面10.在屏蔽材料导向面13上设置具有约20μm厚度的屏蔽材料16.版权所有(C)2006,JPO&NCIPI

    Workpiece processing method
    7.
    发明专利
    Workpiece processing method 有权
    工作处理方法

    公开(公告)号:JP2013006267A

    公开(公告)日:2013-01-10

    申请号:JP2012117427

    申请日:2012-05-23

    发明人: UEHARA YOSHIHIRO

    IPC分类号: B24B49/02 B24B13/00 B24B37/00

    摘要: PROBLEM TO BE SOLVED: To process a workpiece in one processing with high accuracy.SOLUTION: A processing method includes: changing a relative orientation of a unit removal shape and the workpiece; positioning a relative position of a rotation shaft of a rotating polishing tool and the workpiece so as to have a relative orientation having a smallest difference among differences between a calculated removal shape and a target removal shape determined for each of the relative orientations; and processing the workpiece at a relative speed in accordance with a dwell time distribution. Accordingly, the processing method is capable of processing the workpiece with less error in one scanning for processing, thereby increasing the precision of a workpiece surface and improving the efficiency of processing by reducing the frequency of repetition of the processing.

    摘要翻译: 要解决的问题:在一次加工中高精度地加工工件。 解决方案:一种处理方法包括:改变单元去除形状和工件的相对取向; 定位旋转的抛光工具的旋转轴和工件的相对位置,使得相对取向在针对每个相对取向确定的计算去除形状和目标去除形状之间的差异中具有最小的差异; 并根据停留时间分布以相对速度处理工件。 因此,处理方法能够在一次扫描中处理误差较小的工件,从而通过降低加工重复的频率来提高工件表面的精度并提高加工效率。 版权所有(C)2013,JPO&INPIT

    Method and apparatus for controlling topographical variation on milled cross-section of structure
    8.
    发明专利
    Method and apparatus for controlling topographical variation on milled cross-section of structure 有权
    用于控制结构十字交叉部分的地形变化的方法和装置

    公开(公告)号:JP2012195597A

    公开(公告)日:2012-10-11

    申请号:JP2012107011

    申请日:2012-05-08

    CPC分类号: G11B5/3163 H01J2237/3114

    摘要: PROBLEM TO BE SOLVED: To provide an improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve measurement accuracy.SOLUTION: Topographical variation is reduced by a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of a structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

    摘要翻译: 要解决的问题:提供一种在铣削结构的横截面时控制形貌变化的改进方法,其可用于减小写入头的横截面上的形貌变化,以便改善测量 准确性。 解决方案:通过保护层降低了拓扑变化,该保护层包括具有更高入射角的磨机速率的材料,该材料在这些较高入射角下接近于结构的轧机速率。 可以通过使用保护层来有意地引入地形变化,所述保护层包括在较高入射角下具有较高入射角的磨机速率的材料,该材料在这些较高入射角下不接近于结构的磨机速度。 版权所有(C)2013,JPO&INPIT

    Charged-particle beam processing method
    9.
    发明专利
    Charged-particle beam processing method 有权
    充电颗粒光束处理方法

    公开(公告)号:JP2010194546A

    公开(公告)日:2010-09-09

    申请号:JP2009038814

    申请日:2009-02-23

    摘要: PROBLEM TO BE SOLVED: To reduce processing time for shape correction processing and smoothing processing in processing of an optical element requiring high shape accuracy.
    SOLUTION: A workpiece surface 100 is processed by simultaneously irradiating a plurality of charged-particle beams to the workpiece surface 100 in the same relative movement. A first charged-particle beam of the plurality of the charged-particle beams performing the same relative movement is an ion beam 101 for shape correction processing which performs the shape correction processing by variably controlling scanning speed along a raster scanning locus 103. A second charged-particle beam is an ion beam 102 for smoothing processing which performs the smoothing processing by variably controlling a pulse width and a current amount corresponding to the change of the scanning speed. A plurality of processings in which the distribution of the number of unit attainment particles is different at the workpiece surface 100 are simultaneously carried out so that processing time is reduced.
    COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译: 要解决的问题:为了减少需要高形状精度的光学元件的处理中的形状校正处理和平滑处理的处理时间。 解决方案:通过在相同的相对运动中同时向工件表面100照射多个带电粒子束来处理工件表面100。 执行相同相对移动的多个带电粒子束的第一带电粒子束是用于形状校正处理的离子束101,其通过可变地控制沿着光栅扫描轨迹103的扫描速度来执行形状校正处理。第二带电 粒子束是用于平滑处理的离子束102,其通过可变地控制与扫描速度的变化相对应的脉冲宽度和电流量来进行平滑处理。 同时进行多个在工件表面100处的单位获得粒子的数量分布不同的处理,从而减少处理时间。 版权所有(C)2010,JPO&INPIT