利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

109 records (took 0.046 seconds)

    신규한 피롤로피리딘 화합물
    24.
    发明公开
    신규한 피롤로피리딘 화합물 有权
    吡咯并吡啶衍生物及其作为PPAR受体调节剂的用途

    公开(公告)号：KR1020080039908A

    公开(公告)日：2008-05-07

    申请号：KR1020087003832

    申请日：2006-08-31

    Applicant: 라보라뚜와르 푸르니에 에스아에스

    Inventor： 보비아,베넷사 ,  바르트,마틴 ,  비네트,쟝 ,  도디,피에르 ,  르장드르,크리스챤 ,  포루파르딘-올리비에르,올리비아

    IPC: C07D471/04 ,  A61K31/437 ,  A61P3/06

    CPC classification number: C07D207/48 ,  C07D213/61 ,  C07D471/04

    Abstract: The invention relates to pyrrolopyridine derivative compounds having general formula (I) as defined in the claims and to the pharmaceutically-acceptable addition salts thereof. The invention also relates to the method of preparing the aforementioned compounds, to pharmaceutical compositions containing same and to the use thereof as a pharmacologically-active substance, for example in the treatment of hypertriglyceridaemias, hyperlipidemias, hypercholesterolemias, diabetes, endothelial dysfunction, cardiovascular and inflammatory diseases and neurodegeneration.

    Abstract translation: 本发明涉及权利要求中定义的通式（I）的吡咯并吡啶衍生物化合物及其药学上可接受的加成盐。 本发明还涉及制备上述化合物的方法，含有其的药物组合物及其作为药理学活性物质的用途，例如用于治疗高甘油三酯血症，高脂血症，高胆固醇血症，糖尿病，内皮功能障碍，心血管和炎症 疾病和神经退行性疾病。

    신규 술폰산염 및 그의 유도체, 광산 발생제 및 이를이용한 레지스트 재료 및 패턴 형성 방법
    25.
    发明公开
    신규 술폰산염 및 그의 유도체, 광산 발생제 및 이를이용한 레지스트 재료 및 패턴 형성 방법 有权
    新型磺化盐和衍生物，光致发生剂，抗蚀剂组合物和方法

    公开(公告)号：KR1020080000528A

    公开(公告)日：2008-01-02

    申请号：KR1020070062926

    申请日：2007-06-26

    Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤

    Inventor： 고바야시,가쯔히로 ,  오사와,유이찌 ,  긴쇼,다께시 ,  와따나베,다께루

    IPC: C07F1/02 ,  C07F1/04 ,  C07C309/65 ,  G03F7/039

    CPC classification number: C07C381/12 ,  C07C309/00 ,  C07C309/12 ,  C07C2601/14 ,  C07C2603/74 ,  C07D207/48 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  Y10S430/114 ,  Y10S430/115

    Abstract: A sulfonate salt and a derivative thereof are provided to be effectively used as a raw material of a photoacid generator of a resist material or a photoacid generator by inhibiting the dissolution in water and controlling the formation of foreign matter inherent to the ArF immersion lithography. A sulfonate salt is represented by the formula(1) of R^1COOCH2CH2CF2CF2SO3^-M^+(R^1 is a substituted or unsubstituted C1-20 linear, branched or cyclic alkyl, a substituted or unsubstituted C6-15 aryl, or a C4-15 heteroaryl, and M^+ is a lithium, sodium, potassium, ammonium, or tetramethylammonium ion). A photoacid generator for a chemically amplified resist composition generates a sulfonic acid represented by the formula(1a) of R^1COOCH2CH2CF2CF2SO3^-H^+ upon exposure to high-energy radiation selected from UV, deep-UV, electron beam, x-ray, excimer laser, gamma-ray and synchrotron radiation. A resist composition comprises a base resin, an acid generator, and an organic solvent, wherein the acid generator comprises a photoacid generator which generates the sulfonic acid of the formula(1a). A chemically amplified positive resist composition comprises a base resin, a photoacid generator which generates a sulfonic acid of the formula(1a), and a solvent, wherein the base resin is insoluble or substantially insoluble in a liquid developer, and becomes soluble under the action of the acid. A method for forming a pattern comprises the steps of: (a) applying the resist composition onto a substrate to form a coating; (b) heat-treating the coating and exposing it to high-energy radiation having a wavelength of up to 300 nm through a photomask; and (c) optionally heat-treating and developing the exposed coating with a developer.

    Abstract translation: 提供磺酸盐及其衍生物，通过抑制水中的溶解和控制ArF浸渍光刻固有的杂质的形成，有效地用作抗蚀剂材料或光致酸产生剂的光致酸产生剂的原料。 磺酸盐由式（1）表示：R 1，COOCH 2 CH 2 CF 2 CF 2 SO 3，-M 2 +（R 1是取代或未取代的C 1-20直链，支链或环状烷基，取代或未取代的C 6-15芳基或 C4-15杂芳基，M ^ +是锂，钠，钾，铵或四甲基铵离子）。 用于化学放大抗蚀剂组合物的光致酸发生剂在暴露于选自UV，深UV，电子束，x射线的高能辐射下时，产生由式（1a）表示的R 1 1 COOCH 2 CH 2 CF 2 CF 2 SO 3 ，准分子激光，γ射线和同步辐射。 抗蚀剂组合物包含基础树脂，酸产生剂和有机溶剂，其中酸产生剂包括产生式（1a）的磺酸的光酸产生剂。 化学放大型抗蚀剂组合物包含基础树脂，产生式（1a）的磺酸的光酸产生剂和溶剂，其中基础树脂不溶于或基本上不溶于液体显影剂，并且在作用下变得可溶 的酸。 形成图案的方法包括以下步骤：（a）将抗蚀剂组合物施加到基底上以形成涂层; （b）对涂层进行热处理，并通过光掩模将其暴露于波长高达300nm的高能辐射; 和（c）任选地用显影剂热处理和显影曝光的涂层。

    카텝신 Ｋ 억제제로서의 니트릴 유도체
    27.
    发明授权
    카텝신 Ｋ 억제제로서의 니트릴 유도체 失效
    카텝신K억제제로서의니트릴유도체

    公开(公告)号：KR100468254B1

    公开(公告)日：2005-01-27

    申请号：KR1020027008003

    申请日：2000-12-13

    Applicant: 에프. 호프만-라 로슈 아게

    Inventor： 가브리엘토비아스 ,  페흐미카엘 ,  발바움사비네

    IPC: C07D277/06

    CPC classification number: C07D403/06 ,  C07D207/16 ,  C07D207/48 ,  C07D209/52 ,  C07D277/06 ,  C07D405/12 ,  C07D405/14

    Abstract: Compounds of the formula:wherein R1 to R7 and Y are as defined in the specification, and pharmaceutically acceptable salts and/or pharmaceutically acceptable esters thereof, are useful for treating diseases associated with cystein proteases, such as osteoporosis, osteoarthritis, rheumatoid arthritis, tumor metastasis, glomerulonephritis, atherosclerosis, myocardial infarction, angina pectoris, instable angina pectoris, stroke, plaque rupture, transient ischemic attacks, amaurosis fugax, peripheral arterial occlusive disease, restenosis after angioplasty and stent placement, abdominal aortic aneurysm formation, inflammation, autoimmune disease, malaria, ocular fundus tissue cytopathy and respiratory disease.

    Abstract translation: 下式化合物：其中R 1至R 7和Y如说明书中所定义，及其药学上可接受的盐和/或药学上可接受的酯用于治疗与半胱氨酸蛋白酶相关的疾病，例如骨质疏松症，骨关节炎，类风湿性关节炎，肿瘤 转移，肾小球肾炎，动脉粥样硬化，心肌梗塞，心绞痛，不稳定型心绞痛，中风，斑块破裂，短暂性脑缺血发作，黑质瘤，周围动脉闭塞性疾病，血管成形术和支架放置后再狭窄，腹主动脉瘤形成，炎症，自身免疫性疾病， 疟疾，眼底组织细胞病和呼吸系统疾病。

Patent Agency Ranking