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Patent Agency Ranking
公开(公告)号：KR1020150038535A
公开(公告)日：2015-04-08
申请号：KR1020157005393
申请日：2012-09-04
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L23/488 , H01L23/495 , H01L23/00
CPC classification number: H01L24/05 , H01L23/498 , H01L24/01 , H01L24/03 , H01L24/08 , H01L24/11 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/034 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/16113 , H01L2224/16245 , H01L2224/29101 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73251 , H01L2224/73265 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/07025 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/20645 , H01L2924/20646 , H01L2924/20647 , H01L2924/20648 , H01L2924/20649 , H01L2924/2065 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/01201 , H01L2924/01014 , H01L23/488 , H01L23/495 , H01L24/10
Abstract: 본원의발명에관한반도체장치는, 반도체소자와, 상기반도체소자의표면에형성된표면전극과, 상기표면전극위에, 접합부와, 상기접합부와접하면서상기접합부를둘러싸도록형성된응력완화부를갖도록형성된금속막과, 상기응력완화부를피해서상기접합부에접합된땜납과, 상기땜납을거쳐상기접합부에접합된외부전극을구비한것을특징으로한다.
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公开(公告)号：KR1020160132499A
公开(公告)日：2016-11-18
申请号：KR1020167031425
申请日：2012-09-04
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L23/488 , H01L23/495 , H01L23/00
CPC classification number: H01L24/05 , H01L23/498 , H01L24/01 , H01L24/03 , H01L24/08 , H01L24/11 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/034 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/16113 , H01L2224/16245 , H01L2224/29101 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73251 , H01L2224/73265 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/07025 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/20645 , H01L2924/20646 , H01L2924/20647 , H01L2924/20648 , H01L2924/20649 , H01L2924/2065 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/01201 , H01L2924/01014
Abstract: 본원의발명에관한반도체장치는, 반도체소자와, 상기반도체소자의표면에형성된표면전극과, 상기표면전극위에, 접합부와, 상기접합부와접하면서상기접합부를둘러싸도록형성된응력완화부를갖도록형성된금속막과, 상기응력완화부를피해서상기접합부에접합된땜납과, 상기땜납을거쳐상기접합부에접합된외부전극을구비한것을특징으로한다.
Abstract translation: 本发明的半导体器件包括半导体元件，形成在半导体元件的表面上的表面电极，形成在表面电极上的金属膜，以具有形成为接合部分的接合部分和应力消除部分 并且围绕接合部分，焊料接合到接合部分同时避免应力消除部分，以及外部电极通过焊料接合到接合部分。
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公开(公告)号：KR1020140103843A
公开(公告)日：2014-08-27
申请号：KR1020140014006
申请日：2014-02-07
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L21/28
CPC classification number: H01L23/49805 , H01L23/4827 , H01L23/49866 , H01L29/1608 , H01L29/34 , H01L29/401 , H01L29/45 , H01L29/456 , H01L29/8611 , H01L2924/0002 , H01L2924/00
Abstract: The purpose of the present invention is to provide a semiconductor device capable of improving the bonding strength between a semiconductor substrate and a back electrode while maintaining electrical characteristics of the semiconductor device. The present invention comprises a semiconductor substrate (2a) and a back electrode (a back multilayer electrode (1) in an embodiment) installed on the back surface of the semiconductor substrate. A rough surface pattern (4a) is formed in an edge part of the back surface of the semiconductor substrate (2a) which faces the back multilayer electrode (1).
Abstract translation: 本发明的目的是提供一种能够在保持半导体器件的电气特性的同时提高半导体衬底和背面电极之间的接合强度的半导体器件。 本发明包括安装在半导体衬底的背面上的半导体衬底（2a）和背电极（实施例中的背面多层电极（1））。 在面向背面多层电极（1）的半导体衬底（2a）的背表面的边缘部分中形成粗糙表面图案（4a）。
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公开(公告)号：KR100393937B1
公开(公告)日：2003-08-09
申请号：KR1020000068314
申请日：2000-11-17
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/67098 , C23C16/4481
Abstract: A vaporizing chamber is constituted by a vaporizer body and an upper vaporizer cover, and a raw material supply pipe for introducing a liquid raw material into the vaporizing chamber is connected to the upper vaporizer cover. In order to suppress transmission of heat from the vaporizing chambers and to the raw material supply pipe, a heat radiation preventing member is provided on a surface of an external wall of each of the vaporizing chambers and. Consequently, a liquid raw material vaporizer capable of suppressing the generation of a vaporization residue is provided, and a semiconductor device including a CVD film having a stable thickness and a method of manufacturing the semiconductor device are obtained.
Abstract translation: 蒸发室由蒸发器体和上部蒸发器盖构成，用于将液体原料引入蒸发室的原料供应管与上部蒸发器盖连接。 为了抑制来自蒸发室和原料供给管的热量的传递，在每个蒸发室的外壁表面上设置防热辐射部件， 其结果是，能够得到能够抑制气化残渣的产生的液体原料气化器，能够得到具有稳定的厚度的CVD膜的半导体装置及其制造方法。
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公开(公告)号：KR1020010092651A
公开(公告)日：2001-10-26
申请号：KR1020000068314
申请日：2000-11-17
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/67098 , C23C16/4481
Abstract: PURPOSE: An apparatus for evaporating a liquid material is provided to control an increase of temperature of a pipe for supplying a raw material by controlling the transfer of heat from an evaporation chamber to the raw material supplying pipe. CONSTITUTION: The raw material supplying pipe(23) introduces the liquid material. The evaporation chamber(20,21) heats and evaporates the liquid material introduced from the raw material supplying pipe, connected to the raw material supplying unit. A control unit(25) controls heat transferred from the evaporation chamber to the raw material supplying pipe, attached to at least one of the evaporation chamber and the raw material supplying pipe.
Abstract translation: 目的：提供一种用于蒸发液体材料的装置，通过控制从蒸发室向原料供应管的转移而控制用于供应原料的管道的温度升高。 构成：原料供给管（23）引入液体材料。 蒸发室（20,21）加热并蒸发与原料供给单元连接的从原料供给管引入的液体材料。 控制单元（25）控制安装在蒸发室和原料供给管中的至少一个上的从蒸发室向原料供给管传递的热量。
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