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15 条记录 (耗时 0.012 秒)

    니켈플래시 도금용 다기능성 과포화 슬러리 도금용액
    2.
    发明授权
    니켈플래시 도금용 다기능성 과포화 슬러리 도금용액 有权
    用于镍镀层的多功能超饱和浆液溶液

    公开(公告)号：KR101173879B1

    公开(公告)日：2012-08-14

    申请号：KR1020110025451

    申请日：2011-03-22

    申请人： 남동화학(주)

    发明人： 김수원 ,  윤경석

    IPC分类号： C23C2/02 ,  C23C2/06

    CPC分类号： C25D3/18 ,  C25D3/16

    摘要： PURPOSE: A multi-functional supersaturated slurry plating solution for nickel flash plating is provided to supplement nickel ion and maintain iron components below a predetermined level. CONSTITUTION: A multi-functional supersaturated slurry plating solution for nickel flash plating is prepared by adding alkali salt to a nick flash plating solution. The nickel flash plating solution contains nickel salt, a conductivity assistant, a complexing agent, and a co-deposition agent for supporting the co-deposition of iron ion. The alkali salt is prepared by mixing caustic soda, caustic postash, sodium carbonate, and potassium carbonate at the ratio of 10:2:1:1.

    摘要翻译： 目的：提供用于镍闪电镀的多功能过饱和浆料电镀溶液，以补充镍离子并将铁成分维持在预定水平以下。 构成：通过将碱金属盐添加到刻痕闪镀电镀液中制备用于镍闪电镀的多功能超饱和浆料电镀溶液。 镍闪电镀液含有镍盐，导电助剂，络合剂和用于支持铁离子共沉积的共沉积剂。 通过以10：2：1：1的比例混合苛性钠，苛性碱，碳酸钠和碳酸钾制备碱金属盐。

    메모리카드, 메모리 카드용 인쇄회로기판 및 이의 제조 방법
    4.
    发明公开
    메모리카드, 메모리 카드용 인쇄회로기판 및 이의 제조 방법 审中-实审
    存储卡，用于存储卡的印刷电路板及其制造方法

    公开(公告)号：KR1020130106562A

    公开(公告)日：2013-09-30

    申请号：KR1020120028199

    申请日：2012-03-20

    申请人： 엘지이노텍 주식회사

    发明人： 임설희

    IPC分类号： G06K19/077 ,  H05K1/18

    CPC分类号： H05K1/05 ,  C25D3/14 ,  C25D3/16 ,  C25D5/022 ,  C25D5/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H05K1/11 ,  H05K1/117 ,  H05K1/181 ,  H05K3/244 ,  H05K2201/0104 ,  H05K2201/032 ,  H05K2201/0338 ,  H05K2201/10159 ,  H05K2203/049 ,  H01L2924/00014 ,  H01L2924/00

    摘要： PURPOSE: A memory card, a printed circuit board for the memory card, and a manufacturing method thereof are provided to have a new structure to provide required physical properties simultaneously. CONSTITUTION: A memory card and a printed circuit board (PCB) (100) for the memory card comprise an insulating layer (110); a mounting unit (120) which is formed on the insulating layer; a terminal unit (130) which is formed on the lower side of the insulating layer; a protective layer (140) which is formed on the insulating layer; a nickel metal layer (150) which is formed on the upper part of the terminal unit; a palladium metal layer (160) which is formed on the nickel metal layer; and a gold metal layer (170) which is formed on the palladium metal layer. The insulating layer can be a thermosetting polymer substrate, a thermoplastic polymer substrate, a ceramic substrate, an organic-inorganic composite material substrate, or a glass fiber-impregnated substrate. The mounting unit and the terminal unit are composed of an alloy including copper, and can have surface roughness. The nickel metal layer is formed to comprise nickel only or an alloy which composed of Ni, P, B, W, Co; and to have 2-10 um or preferably 5-8 um in thickness. A palladium metal layer is formed by using a palladium plating liquid including palladium (Pd), and can have surface roughness on the surface.

    摘要翻译： 目的：提供存储卡，用于存储卡的印刷电路板及其制造方法，以具有同时提供所需物理性质的新结构。 构成：用于存储卡的存储卡和印刷电路板（PCB）（100）包括绝缘层（110）; 安装单元（120），其形成在所述绝缘层上; 形成在绝缘层的下侧的端子单元（130）; 形成在所述绝缘层上的保护层（140） 形成在所述端子单元的上部的镍金属层（150）; 形成在所述镍金属层上的钯金属层（160） 和形成在钯金属层上的金金属层（170）。 绝缘层可以是热固性聚合物基材，热塑性聚合物基材，陶瓷基材，有机 - 无机复合材料基材或玻璃纤维浸渍基材。 安装单元和端子单元由包含铜的合金组成，并且可以具有表面粗糙度。 镍金属层形成为仅包含镍或由Ni，P，B，W，Co组成的合金; 并且具有2-10um或优选5-8μm的厚度。 通过使用包含钯（Pd）的钯电镀形成钯金属层，并且可以在表面上具有表面粗糙度。

    반도체 소자의 제조방법, 반도체 소자
    6.
    发明公开
    반도체 소자의 제조방법, 반도체 소자 有权
    制造半导体器件的方法和半导体器件

    公开(公告)号：KR1020140055961A

    公开(公告)日：2014-05-09

    申请号：KR1020130100888

    申请日：2013-08-26

    申请人： 미쓰비시덴키 가부시키가이샤

    发明人： 쓰나미다이스케 ,  니시자와코이치로

    IPC分类号： H01L21/288

    CPC分类号： H01L21/76874 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/34 ,  C23C18/36 ,  C23C18/54 ,  C25D3/16 ,  C25D3/18 ,  C25D3/38 ,  C25D3/50 ,  C25D5/10 ,  C25D7/123 ,  C25D15/00 ,  H01L21/288 ,  H01L21/4875 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/36 ,  H01L23/49811 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    摘要： The purpose of the present invention is to provide a semiconductor device and a manufacturing method thereof which has a layer having excellent coating quality between a substrate and a metal layer and suppresses that Cu etc which is a component of the metal layer is diffused to the substrate. The manufacturing method of the semiconductor device comprises; a step of attaching a metal catalyst (12a) to the surface of the substrate by dipping the substrate (10) in a liquid including a metal ion; a step of forming an electroless plating layer on the substrate by dipping the substrate in which the metal catalyst is attached in a electroless plating liquid; a step of forming an electroplating layer (16) on the electroless plating layer using the electroless plating layer as a feeding layer by dipping the substrate in an electroplating liquid; and a step of forming a metal layer (18) on the electroplating layer with Cu or Ag. The electroplating layer is formed of a different material with the metal layer.

    摘要翻译： 本发明的目的是提供一种半导体器件及其制造方法，其具有在基板和金属层之间具有优异涂层质量的层，并抑制作为金属层的成分的Cu等扩散到基板 。 半导体器件的制造方法包括： 通过将基板（10）浸渍在包含金属离子的液体中来将金属催化剂（12a）附着到基板的表面上的步骤; 通过将其中附着有金属催化剂的基板浸渍在无电镀液中而在基板上形成化学镀层的步骤; 通过将基板浸渍在电镀液中，使用化学镀层作为进料层在化学镀层上形成电镀层（16）的步骤; 以及用Cu或Ag在电镀层上形成金属层（18）的步骤。 电镀层由与金属层不同的材料形成。