Phase grating used for X-ray phase imaging, imaging apparatus for X-ray phase contrast image using phase grating, and X-ray computed tomography system
    1.
    发明授权
    Phase grating used for X-ray phase imaging, imaging apparatus for X-ray phase contrast image using phase grating, and X-ray computed tomography system 失效
    用于X射线相位成像的相位光栅,使用相位光栅的X射线相位对比图像的成像装置和X射线计算机断层摄影系统

    公开(公告)号:US08718228B2

    公开(公告)日:2014-05-06

    申请号:US12922145

    申请日:2009-03-12

    IPC分类号: G21K1/00

    摘要: A phase grating used for X-ray phase imaging is provided, in which a pitch can be narrowed by using a diffraction grating with a low aspect ratio. A phase grating used for X-ray phase imaging, characterized in that the phase grating includes a first diffraction grating in which a first projection part whose thickness is formed so that an in-coming X-ray transmits with a phase π-shifted, and a first aperture part with the same aperture width as a width of the first projection part are cyclically arranged, and a second diffraction grating in which a second projection part with the same width as a width of the first projection part, and a second aperture part with the same aperture width as the aperture width of the first aperture part are cyclically arranged, and the second diffraction grating is formed as displaced on the first diffraction grating.

    摘要翻译: 提供了用于X射线相位成像的相位光栅,其中可以通过使用具有低纵横比的衍射光栅来缩小间距。 一种用于X射线相位成像的相位光栅,其特征在于,所述相位光栅包括第一衍射光栅,其中第一突出部分的厚度形成为使得入射X射线以相位移动的方式透射, 并且具有与第一突出部分的宽度相同的孔径宽度的第一开口部分循环地布置;以及第二衍射光栅,其中具有与第一突出部分的宽度相同的宽度的第二突出部分和第二孔径 具有与第一孔部分的孔径宽度相同的孔径宽度的部分循环地布置,并且第二衍射光栅在第一衍射光栅上形成为位移。

    Mold and process of production thereof
    2.
    发明授权
    Mold and process of production thereof 失效
    模具及其生产工艺

    公开(公告)号:US07591641B2

    公开(公告)日:2009-09-22

    申请号:US11367343

    申请日:2006-03-06

    IPC分类号: B29C59/00 B28B7/38

    摘要: A novel mold is provided. The mold is prepared through steps of forming a concavo-convex pattern on a substrate, forming a film by embedding a material of a composition having shape-memory in the concavo-convex pattern, and forming a mold having the concavo-convex pattern by separating the film from the concavo-convex pattern after the film formation in the film formation step.

    摘要翻译: 提供了一种新颖的模具。 通过在基板上形成凹凸图案的步骤来制备模具,通过将具有形状记忆的组合物的材料嵌入凹凸图案中形成膜,并通过分离形成具有凹凸图案的模具 在成膜步骤中成膜后的凹凸图案的膜。

    Structure manufacturing method
    3.
    发明授权
    Structure manufacturing method 失效
    结构制造方法

    公开(公告)号:US07100263B2

    公开(公告)日:2006-09-05

    申请号:US10865403

    申请日:2004-06-09

    申请人: Aya Imada Tohru Den

    发明人: Aya Imada Tohru Den

    IPC分类号: B21D39/00 H01L21/76 H01L29/06

    摘要: A liquid application material that is capable of forming an oxidized insulator as a result of baking is applied onto a support substrate to produce an object of processing. Then, a mold having projection structures with intervals of nanometers is pressed against the applied liquid material to produce corresponding recess structures. Thereafter, the applied liquid material is baked in oxygen-containing gas or oxidized in ozone or oxygen plasma to make it electrically highly resistive. Subsequently, a layer to be anodized is formed on said oxidized insulator. Then, the layer to be anodized is actually anodized in an acidic solution to form fine holes that are aligned with the respective recess structures in the anodized layer. Accordingly, fine recess structures can be manufactured with ease.

    摘要翻译: 将能够形成作为烘烤的结果的氧化绝缘体的液体涂布材料施加到支撑基板上以产生加工对象。 然后,将具有间隔为纳米的突出结构的模具压在所施加的液体材料上以产生相应的凹陷结构。 此后,将所施加的液体材料在含氧气体中烘烤或在臭氧或氧等离子体中氧化以使其具有高电阻性。 随后,在所述氧化的绝缘体上形成待阳极化的层。 然后,阳极氧化层实际上在酸性溶液中进行阳极氧化以形成与阳极氧化层中的相应凹陷结构对准的细孔。 因此,可以容易地制造细小的凹部结构。

    Method and device for manufacturing structure having pattern, and method for manufacturing mold
    4.
    发明授权
    Method and device for manufacturing structure having pattern, and method for manufacturing mold 有权
    具有图案的制造结构的方法和装置,以及用于制造模具的方法

    公开(公告)号:US08293125B2

    公开(公告)日:2012-10-23

    申请号:US11995170

    申请日:2006-09-05

    IPC分类号: C03C15/00

    摘要: A structure having a pattern is manufactured. An elastically deformable process target is elastically deformed in an inplane direction from a first state. A first pattern is formed on the process target deformed. The elastically deformed process target is made close to or returned to the first state, thereby to form a second pattern having a size and a shape at least one of which differs from those of the first pattern.

    摘要翻译: 制造具有图案的结构。 弹性变形过程目标从第一状态沿面内方向弹性变形。 在变形的过程目标上形成第一图案。 使弹性变形的加工对象靠近或返回到第一状态,从而形成具有与第一图案不同的尺寸和形状的第二图案。

    METHOD AND DEVICE FOR MANUFACTURING STRUCTURE HAVING PATTERN, AND METHOD FOR MANUFACTURING MOLD
    6.
    发明申请
    METHOD AND DEVICE FOR MANUFACTURING STRUCTURE HAVING PATTERN, AND METHOD FOR MANUFACTURING MOLD 有权
    用于制造具有图案的结构的方法和装置,以及用于制造模具的方法

    公开(公告)号:US20090120904A1

    公开(公告)日:2009-05-14

    申请号:US11995170

    申请日:2006-09-05

    摘要: A structure having a pattern is manufactured. An elastically deformable process target is elastically deformed in an inplane direction from a first state. A first pattern is formed on the process target deformed. The elastically deformed process target is made close to or returned to the first state, thereby to form a second pattern having a size and a shape at least one of which differs from those of the first pattern.

    摘要翻译: 制造具有图案的结构。 弹性变形过程目标从第一状态沿面内方向弹性变形。 在变形的过程目标上形成第一图案。 使弹性变形的加工对象靠近或返回到第一状态,从而形成具有与第一图案不同的尺寸和形状的第二图案。

    Process for producing nanostructure of mixed film of Al, Si, and/or Ge
    7.
    发明授权
    Process for producing nanostructure of mixed film of Al, Si, and/or Ge 失效
    制备Al,Si和/或Ge混合膜的纳米结构的方法

    公开(公告)号:US07517554B2

    公开(公告)日:2009-04-14

    申请号:US11339627

    申请日:2006-01-26

    IPC分类号: C23C8/00

    摘要: A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.

    摘要翻译: 提供一种制造纳米结构的方法,其能够通过成膜条件控制孔径和孔间隔。 该方法产生相对于铝含有20〜70原子%含有硅和锗的铝 - 硅 - 锗混合膜的纳米结构,该混合膜由组成为主要由硅和锗组成的基体构成 SixGe1-x(0 <= X <= 1)的比例,以及主要由直径不大于30nm的铝构成的圆筒部。 在该过程中,以不高于150nm / min的成膜速度形成混合膜。

    METHOD OF PRODUCING A STRUCTURE HAVING A HOLE
    8.
    发明申请
    METHOD OF PRODUCING A STRUCTURE HAVING A HOLE 失效
    生产具有孔的结构的方法

    公开(公告)号:US20080050526A1

    公开(公告)日:2008-02-28

    申请号:US11766908

    申请日:2007-06-22

    申请人: Aya Imada Toru Den

    发明人: Aya Imada Toru Den

    IPC分类号: B05D5/00

    摘要: The present invention provides a method of producing a structure, which is capable of easily obtaining a structure of the nanometer scale by using an anodic oxidation method. A method of producing a structure with a hole includes: forming first projected structures regularly arranged on a substrate; forming a first anodic oxidating layer on the substrate having the first projected structures, thereby forming first recessed structures at center portions of cells formed by the projected structures on the anodic oxidating layer; removing the first projected structures to form holes; and subjecting the first anodic oxidating layer to anodic oxidation to form holes at positions of the first recessed structures.

    摘要翻译: 本发明提供一种通过使用阳极氧化法容易地得到纳米级结构的结构体的制造方法。 制造具有孔的结构的方法包括:形成规则地布置在基板上的第一突出结构; 在具有第一投影结构的基板上形成第一阳极氧化层,从而在由阳极氧化层上的投影结构形成的单元的中心部分形成第一凹陷结构; 移除第一投影结构以形成孔; 以及对所述第一阳极氧化层进行阳极氧化,以在所述第一凹部结构的位置形成孔。

    Process for producing structure, structure thereof, and magnetic recording medium

    公开(公告)号:US20060144812A1

    公开(公告)日:2006-07-06

    申请号:US10559966

    申请日:2003-12-05

    申请人: Aya Imada Tohru Den

    发明人: Aya Imada Tohru Den

    IPC分类号: B44C1/22

    摘要: The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing member, (C) forming depressions by impressing the impressing member on the layer corresponding to protrusions of the impressing member, (D) etching the layer to bare at least a part of the surface of the substrate, and (E) anodizing the substrate to form holes on the substrate.