METHOD OF FORMING EXPOSURE PATTERNS
    1.
    发明申请
    METHOD OF FORMING EXPOSURE PATTERNS 失效
    形成曝光图案的方法

    公开(公告)号:US20110189597A1

    公开(公告)日:2011-08-04

    申请号:US12775931

    申请日:2010-05-07

    CPC classification number: G03F1/00 G03F7/20

    Abstract: The present invention discloses a method of forming exposure patterns. These steps of the present method comprise: a substrate is provided; a photoresist layer is formed over the substrate; subsequently, a photo mask with a pattern is placed and aligned to a corresponding location over the photoresist layer for at least double exposure processes, and the photo mask with a pattern is moved and aligned to another corresponding location over the photoresist layer during at least one exposure process; successively, at least one filter is provided to perform at least one exposure process, and the filter is placed above or below the photo mask; and the patterns with different dimensions are consequently formed on the substrate after partial photoresist is removed during a later developing process.

    Abstract translation: 本发明公开了一种形成曝光图案的方法。 本发明方法的这些步骤包括:提供基底; 在衬底上形成光致抗蚀剂层; 随后,将具有图案的光掩模放置并对准至光致抗蚀剂层上的相应位置,以进行至少两次曝光处理,并且将具有图案的光掩模移动并对准至少一个光致抗蚀剂层上的另一对应位置 曝光过程; 依次提供至少一个滤光器以执行至少一个曝光处理,并且将滤光器放置在光掩模的上方或下方; 因此在后续显影过程中部分光致抗蚀剂被去除之后,因此在基板上形成具有不同尺寸的图案。

    Method of forming exposure patterns
    3.
    发明授权
    Method of forming exposure patterns 失效
    形成曝光图案的方法

    公开(公告)号:US08399162B2

    公开(公告)日:2013-03-19

    申请号:US12775931

    申请日:2010-05-07

    CPC classification number: G03F1/00 G03F7/20

    Abstract: The present invention discloses a method of forming exposure patterns. These steps of the present method comprise: a substrate is provided; a photoresist layer is formed over the substrate; subsequently, a photo mask with a pattern is placed and aligned to a corresponding location over the photoresist layer for at least double exposure processes, and the photo mask with a pattern is moved and aligned to another corresponding location over the photoresist layer during at least one exposure process; successively, at least one filter is provided to perform at least one exposure process, and the filter is placed above or below the photo mask; and the patterns with different dimensions are consequently formed on the substrate after partial photoresist is removed during a later developing process.

    Abstract translation: 本发明公开了一种形成曝光图案的方法。 本发明方法的这些步骤包括:提供基底; 在衬底上形成光致抗蚀剂层; 随后,将具有图案的光掩模放置并对准至光致抗蚀剂层上的相应位置,以进行至少两次曝光处理,并且将具有图案的光掩模移动并对准至少一个光致抗蚀剂层上的另一对应位置 曝光过程; 依次提供至少一个滤光器以执行至少一个曝光处理,并且将滤光器放置在光掩模的上方或下方; 因此在后续显影过程中部分光致抗蚀剂被去除之后,因此在基板上形成具有不同尺寸的图案。

    COLOR RESIN COMPOSITION AND METHOD FOR FORMING MULTICOLOR COLOR FILTERS
    5.
    发明申请
    COLOR RESIN COMPOSITION AND METHOD FOR FORMING MULTICOLOR COLOR FILTERS 审中-公开
    彩色树脂组合物和形成多色彩色滤光片的方法

    公开(公告)号:US20130078556A1

    公开(公告)日:2013-03-28

    申请号:US13407733

    申请日:2012-02-28

    Abstract: A method for forming multicolor color filters is disclosed. First, a first patterned color layer is formed on a substrate. Second, a second patterned color layer and a third patterned color layer are respectively formed on the substrate with the first patterned color layer. Then the first patterned color layer, the second patterned color layer and the third patterned color layer are baked together to simultaneously transform the first patterned color layer, the second patterned color layer and the third patterned color layer to respectively become a first pixel color layer, a second pixel color layer and a third pixel color layer of the multicolor color filters, respectively.

    Abstract translation: 公开了一种用于形成多色滤色器的方法。 首先,在基板上形成第一图案化着色层。 第二,第二图案化彩色层和第三图案化彩色层分别在第一图案化彩色层的衬底上形成。 然后将第一图案化彩色层,第二图案化彩色层和第三图案化彩色层一起烘烤,以同时变换第一图案化彩色层,第二图案化彩色层和第三图案化彩色层,分别成为第一像素彩色层, 多色滤色器的第二像素彩色层和第三像素彩色层。

    Hydrophilic Monomer, Hydrophilic Photoresist Composition Containing the same, and Resist Pattern Formation Method
    6.
    发明申请
    Hydrophilic Monomer, Hydrophilic Photoresist Composition Containing the same, and Resist Pattern Formation Method 审中-公开
    亲水单体,含有相同的亲水性光致抗蚀剂组合物和抗蚀剂图案形成方法

    公开(公告)号:US20120189960A1

    公开(公告)日:2012-07-26

    申请号:US13166811

    申请日:2011-06-23

    CPC classification number: C07C69/54 G03F7/027 G03F7/032

    Abstract: The present invention is to provide a hydrophilic monomer, and hydrophilic photoresist composition containing the same. The photoresist composition further comprises a hydrophilic resin. The hydrophilic monomer and the hydrophilic resin respectively have a hydrophilic group which is used to react to H2O for the purpose of solving them in pure water. The present invention is also to provide a resist pattern formation method comprising spin coating a hydrophilic photoresist composition on a surface of a substrate to limit a photoresist layer. As a result, the photoresist layer can be developed by pure water. The present invention seeks to overcome the deficiencies in prior art which result in pollution of the environment and cost of photolithography by using basic developing solvent.

    Abstract translation: 本发明提供一种亲水性单体和含有该亲水单体的亲水性光致抗蚀剂组合物。 光致抗蚀剂组合物还包含亲水树脂。 亲水性单体和亲水性树脂分别具有亲水性基团,用于与H 2 O反应,以便在纯水中解决它们。 本发明还提供一种抗蚀剂图案形成方法,包括在基材的表面上旋涂亲水性光致抗蚀剂组合物以限制光致抗蚀剂层。 结果,光致抗蚀剂层可以通过纯水显影。 本发明旨在克服现有技术中的缺点,其通过使用碱性显影溶剂导致环境污染和光刻成本。

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