Process for etching SiO.sub.2 layers to silicon in a moderate vacuum gas
plasma
    5.
    发明授权
    Process for etching SiO.sub.2 layers to silicon in a moderate vacuum gas plasma 失效
    在中等真空气体等离子体中将SiO 2层蚀刻成硅的工艺

    公开(公告)号:US4180432A

    公开(公告)日:1979-12-25

    申请号:US861796

    申请日:1977-12-19

    Inventor: Harold A. Clark

    CPC classification number: H01L21/31116 H01L21/3081

    Abstract: Silicon dioxide is etched at about five times the rate of silicon in a moderate vacuum gas plasma formed from a mixture of CF.sub.4 and oxygen wherein the mixture contains above about 5 to about 15 percent by volume CF.sub.4 so that films of silicon dioxide on silicon can be etched to the silicon surface without excessive attack on the silicon. Silicon dioxide is etched at about three times the rate of silicon nitride so that silicon nitride can be used as an etch mask for the process.

    Abstract translation: 在CF4和氧气的混合物形成的中等真空气体等离子体中硅的蚀刻速率约为二氧化硅的5倍,其中混合物含有约5至约15体积%的CF 4,使得硅上的二氧化硅膜可以是 蚀刻到硅表面,而不会对硅进行过度的攻击。 以大约三倍于氮化硅的速率蚀刻二氧化硅,使得氮化硅可以用作该工艺的蚀刻掩模。

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