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    Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor
    3.
    发明授权
    Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor 有权
    薄膜晶体管，平板显示装置及其制造薄膜晶体管的方法

    公开(公告)号：US07973315B2

    公开(公告)日：2011-07-05

    申请号：US11167157

    申请日：2005-06-28

    申请人： Jae-Bon Koo ,  Hye-Dong Kim ,  Min-Chul Suh

    发明人： Jae-Bon Koo ,  Hye-Dong Kim ,  Min-Chul Suh

    IPC分类号： H01L29/786

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L29/78606

    摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.

    摘要翻译： 一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层， 设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

    Flat panel display comprising semiconductor layer with heterogeous lines
    9.
    发明授权
    Flat panel display comprising semiconductor layer with heterogeous lines 有权
    平板显示器包括具有异质线的半导体层

    公开(公告)号：US07196747B2

    公开(公告)日：2007-03-27

    申请号：US10754546

    申请日：2004-01-12

    申请人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang Il Park ,  Hye-Dong Kim

    发明人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang Il Park ,  Hye-Dong Kim

    IPC分类号： G02F1/136

    CPC分类号： H01L27/3262 ,  H01L27/1296 ,  H01L27/3276

    摘要： Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.

    摘要翻译： 提供一种平板显示器，其中屏幕上不出现条纹，从而提高图像质量。 平板显示器具有矩阵型子像素阵列，每个子像素包括驱动薄膜晶体管，由驱动薄膜晶体管驱动的第一电极和与第一电极一起驱动发光单元的第二电极 。 驱动薄膜晶体管包括衍生自半导体层的半导体沟道。 不均匀的直线在半导体层上彼此分离。 连接一列的半导体通道的假想线不平行于异质直线。

    Method for forming LDD/offset structure of thin film transistor
    10.
    发明授权
    Method for forming LDD/offset structure of thin film transistor 有权
    薄膜晶体管的LDD /偏移结构的形成方法

    公开(公告)号：US06576502B1

    公开(公告)日：2003-06-10

    申请号：US09693992

    申请日：2000-10-23

    申请人： Hye-dong Kim

    发明人： Hye-dong Kim

    IPC分类号： H01L2100

    CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/78621

    摘要： A method for fabricating a thin film transistor. An active layer is first formed on a substrate, then a first insulating layer is formed on the active layer. Next, a gate electrode pattern is formed on the first insulating layer and an LDD region is formed by lightly doping ions in the active layer using the gate electrode pattern as a mask. A polymer layer is formed on a surface of the gate electrode pattern using an electrochemical polymerizing process, and source and drain contact layers are formed by densely doping ions in the active layer using the gate electrode pattern deposited with the polymer layer. A second insulating layer is then formed on a surface of the first insulating layer while covering the gate electrode pattern. Contact holes are formed through the insulating layers, and metal material is sputtered in the contact holes to form the source and drain electrodes.

    摘要翻译： 一种制造薄膜晶体管的方法。 首先在衬底上形成有源层，然后在有源层上形成第一绝缘层。 接下来，在第一绝缘层上形成栅电极图案，并使用栅电极图案作为掩模，通过在有源层中轻掺杂离子形成LDD区。 使用电化学聚合方法在栅电极图案的表面上形成聚合物层，并且通过使用沉积有聚合物层的栅电极图案在有源层中密集掺杂离子形成源极和漏极接触层。 然后在覆盖栅电极图案的同时，在第一绝缘层的表面上形成第二绝缘层。 通过绝缘层形成接触孔，在接触孔中溅射金属材料，形成源极和漏极。