Method of manufacturing a ceramics-type vacuum vessel
    2.
    发明授权
    Method of manufacturing a ceramics-type vacuum vessel 失效
    制造陶瓷型真空容器的方法

    公开(公告)号:US5603788A

    公开(公告)日:1997-02-18

    申请号:US457013

    申请日:1995-06-01

    CPC分类号: H05H7/14

    摘要: A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.

    摘要翻译: 提供一种真空容器,其中包括环形壁部分(1)和板壁部分(2)的容器壁的大部分由诸如氮化硅的陶瓷材料形成。 为了将多个壁构件结合在一起,在其上制备具有不大于1μm的表面平坦度的接合面,然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面 并进行加热。 因为从陶瓷容器的壁产生气体,例如氢气,所以可以在真空容器的内部产生极高的真空度并维持真空。 此外,由于真空容器的壁相对于磁场和电场具有高磁导率,所以真空容器可以用作粒子加速器中的容器,其允许通过以下方式对带电粒子进行高精度控制: 电磁场。

    Aluminum nitride sintered body and process for producing the same
    3.
    发明授权
    Aluminum nitride sintered body and process for producing the same 失效
    氮化铝烧结体及其制造方法

    公开(公告)号:US5273700A

    公开(公告)日:1993-12-28

    申请号:US838800

    申请日:1992-03-16

    IPC分类号: C04B35/581 C04B35/58

    CPC分类号: C04B35/581

    摘要: An aluminum nitride sintered body characterized by comprising aluminum nitride as the main component, containing a titanium compound, and having a black color, a transmittance of 10% or less with the light having a wavelength in the range of from 500 to 650 nm and a heat conductivity of 120 W/m.multidot.K or more. The sintered body is produced by adding 0.05 to 5% by weight, in terms of Ti, of a titanium compound and a sintering aid compound and, if necessary, a compound capable of forming carbon after being thermally decomposed to an aluminum nitride powder, molding the mixture, heating the molding in vacuo, air or a nitrogen gas, a hydrogen gas or an atmosphere comprising a mixture of these gases until the residual carbon content is reduced to 2.0% by weight or less, and sintering the heat-treated mixture in a nonoxidizing atmosphere containing nitrogen at 1600.degree. C. or above. The titanium compound is Ti.sub.n O.sub.2n-1 or a solid solution comprising Ti.sub.n O.sub.2n-1 and nitrogen partly dissolved therein in the solid solution form wherein n is 1 or more, or a compound represented by the formula TiN.sub.x O.sub. y wherein 0

    Sintered body of aluminum nitride
    4.
    发明授权
    Sintered body of aluminum nitride 失效
    氮化铝烧结体

    公开(公告)号:US5264388A

    公开(公告)日:1993-11-23

    申请号:US824746

    申请日:1992-01-17

    摘要: The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti, and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

    摘要翻译: 本发明提供一种氮化铝烧结体,其包含(i)氮化铝作为主要成分,和(ii)选自Zr,Hf,V,Nb,Ta,Cr,Mo,W, Fe,Co,Ni,Nd,Ho,Ti及其化合物的总量不大于1.0wt。 %且不小于0.01wt。 基于烧结体的元素的%,烧结体着色并具有至少150W / mK的导热率。 该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

    Process for production of sintered silicon nitride made article
    5.
    发明授权
    Process for production of sintered silicon nitride made article 失效
    制造烧结氮化硅制品的方法

    公开(公告)号:US5225127A

    公开(公告)日:1993-07-06

    申请号:US829571

    申请日:1992-02-03

    IPC分类号: C04B35/593

    CPC分类号: C04B35/5935

    摘要: There is provided a process for the production of a sintered article which comprises steps ofshaping a raw material powder comprising silicon nitride,thermally treating a shaped article in a non-oxidizing atmosphere at a temperature of 1300.degree. to 1650.degree. C. for at least 2 hours to form .beta.-silicon nitride of not less than 85% calculated from X-ray diffraction patterns and to increase a relative density of the article to not less than 80%, preferably to 80 to 85 %, andsintering the thermally treated article at a temperature of 1700.degree. to 2000.degree. C.

    摘要翻译: 提供了一种生产烧结制品的方法,该方法包括以下步骤:使含有氮化硅的原料粉末成形,在1300℃至1650℃的温度下在非氧化性气氛中对成形制品进行热处理,至少 2小时以形成由X射线衍射图计算的不小于85%的β-氮化硅,并将制品的相对密度提高至不小于80%,优选至80至85%,并将热处理物品 在1700〜2000℃的温度下

    Hard alloy containing molybdenum and tungsten
    7.
    发明授权
    Hard alloy containing molybdenum and tungsten 失效
    含钼和钨的硬质合金

    公开(公告)号:US4265662A

    公开(公告)日:1981-05-05

    申请号:US971835

    申请日:1978-12-19

    IPC分类号: C22C29/00 B22F3/00

    CPC分类号: C22C29/00

    摘要: This invention relates to a hard alloy comprising a hard phase consisting of at least one compound having a crystal structure of simple hexagonal MC type (M: metal; C: carbon) selected from the group consisting of mixed carbides, carbonitrides and carboxynitrides of molybdenum and tungsten as a predominant component, and a binder phase consisting of at least one element selected from the group consisting of iron, cobalt, nickel and chromium, in which a hard phase consisting of a compound of M.sub.2 C type having a crystal structure of hexagonal type is evenly dispersed.

    摘要翻译: 本发明涉及一种硬质合金,其包含由至少一种具有简单的六方晶系MC型(M:金属; C:碳)的晶体结构的化合物组成的硬质合金,所述晶体结构选自由混合碳化物,碳氮化物和钼的羧基氮化物组成的组, 钨作为主要组分,以及由选自铁,钴,镍和铬中的至少一种元素组成的粘结相,其中由具有六方晶系结构的M2C型化合物组成的硬相为 均匀分散。

    Quadrupole electrode and process for producing the same
    8.
    发明授权
    Quadrupole electrode and process for producing the same 失效
    四极电极及其制造方法

    公开(公告)号:US5373157A

    公开(公告)日:1994-12-13

    申请号:US965258

    申请日:1993-01-05

    IPC分类号: H01J49/42 H01J1/88

    CPC分类号: H01J49/4215 H01J49/068

    摘要: The present invention relates to improvement of a quadrupole electrode for use in a mass spectrometer or the like, in which two pairs of electrode rods 1, 2, 3 and 4 formed in such a manner that the section of the opposed face of each rod is hyperbolic or circular, and each electrode rod is made of a ceramic and the surface of the electrode is coated with a coating layer 5 of a conductive metal. Further, the present invention relates to a production process, characterized by incorporating such four electrodes at predetermined intervals. Since the electrodes are mainly made of a ceramic which is easily formable with a high dimensional accuracy, the adjustment of the positional relationship between the electrodes during assembling can be made without much effort, which enables a quadrupole electrode having a high performance to be provided with a good reproducibility at a low cost.

    摘要翻译: PCT No.PCT / JP92 / 01141 Sec。 371日期:1993年1月5日 102(e)日期1993年1月5日PCT提交1992年9月7日PCT公布。 出版物WO93 / 05532 日本1993年3月18日。本发明涉及用于质谱仪等的四极电极的改进,其中两对电极棒1,2,3和4以这样的方式形成: 每个杆的相对面是双曲线或圆形,并且每个电极棒由陶瓷制成,并且电极的表面涂覆有导电金属的涂层5。 此外,本发明涉及一种制造方法,其特征在于以预定间隔并入这四个电极。 由于电极主要由能够以高尺寸精度容易地形成的陶瓷制成,因此可以在组装期间电极之间的位置关系的调整不需要太多的努力,这使得能够提供具有高性能的四极电极 以低成本实现良好的再现性。

    High strength silicon nitride sintered body and process for producing
same
    9.
    发明授权
    High strength silicon nitride sintered body and process for producing same 失效
    高强度硅氮化物烧结体及其生产方法

    公开(公告)号:US5234642A

    公开(公告)日:1993-08-10

    申请号:US459398

    申请日:1989-12-29

    IPC分类号: C04B35/597

    CPC分类号: C04B35/597

    摘要: A high-strength silicon nitride sintered body having a flexural strength of 100 kg/mm.sup.2 or higher and a process for producing the same are disclosed, the sintered body comprising not less than 90% by weight of a single crystalline phase of silicon aluminum oxynitride (Si.sub.6-z Al.sub.2 O.sub.z N.sub.8-z, wherein z is a number of from 0 to 4.2) having an average longer diameter of not more than 5 .mu.m and an aspect ratio of not less than 5, the crystal phase constituting a network structure in the sintered body, the balance being a crystalline or amorphous (glassy) phase comprising one or more of oxides or oxynitrides of a rare earth metal, a group 3A metal, a group 2A metal or Si, and the process comprising mixing silicon nitride powder, an organic metal salt as a first sintering aid, and at least one of a metal oxide, a metal nitride, and a metal oxynitride as a second sintering aid, either separately or as a mixture of two or more thereof, with a solvent and a surface active agent, subjecting the mixture or mixtures to ultrasonic dispersion, mixing the mixtures together followed by drying to obtain a mixed powder, molding the mixed powder, and sintering the molded article at a temperature of from 1,600.degree. to 2,200.degree. C. in a non-oxidative atmosphere.

    Sintered body of aluminum nitride
    10.
    发明授权
    Sintered body of aluminum nitride 失效
    氮化铝烧结体

    公开(公告)号:US5219803A

    公开(公告)日:1993-06-15

    申请号:US803117

    申请日:1991-12-05

    IPC分类号: C04B35/581 H01L23/15 H05K1/03

    摘要: The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti and compounds thereof in the total amounts of not greater than 1.0 wt.% and not less than 0.01 wt.% in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

    摘要翻译: 本发明提供一种氮化铝烧结体,其包含(i)氮化铝作为主要成分,和(ii)选自Zr,Hf,V,Nb,Ta,Cr,Mo,W, Fe,Co,Ni,Nd,Ho,Ti及其化合物的总量不大于1.0重量%且不小于0.01重量%,基于烧结体的元素,烧结体是着色的 并具有至少150W / mK的热导率。 该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。