公开(公告)号：US20120018744A1

公开(公告)日：2012-01-26

申请号：US12842341

申请日：2010-07-23

申请人： Olufemi I. Dosunmu ,  Ansheng Liu

发明人： Olufemi I. Dosunmu ,  Ansheng Liu

IPC分类号： H01L31/12 ,  H01L31/0232

CPC分类号： H01L31/02165 ,  H01L31/103

摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

摘要翻译： 一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及 其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

公开(公告)号：US08829566B2

公开(公告)日：2014-09-09

申请号：US11724805

申请日：2007-03-15

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0312

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US08338857B2

公开(公告)日：2012-12-25

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/028 ,  H01L31/0352

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US20100320502A1

公开(公告)日：2010-12-23

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US07233051B2

公开(公告)日：2007-06-19

申请号：US11170556

申请日：2005-06-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US08330171B2

公开(公告)日：2012-12-11

申请号：US12842341

申请日：2010-07-23

申请人： Olufemi I. Dosunmu ,  Ansheng Liu

发明人： Olufemi I. Dosunmu ,  Ansheng Liu

IPC分类号： H01L29/16

CPC分类号： H01L31/02165 ,  H01L31/103

摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

摘要翻译： 一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及 其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。

公开(公告)号：US20140367740A1

公开(公告)日：2014-12-18

申请号：US14472241

申请日：2014-08-28

申请人： Micheal T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Micheal T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107 ,  H01L27/146

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US08278741B2

公开(公告)日：2012-10-02

申请号：US12495665

申请日：2009-06-30

申请人： Michael T. Morse ,  Mario J. Paniccia ,  Olufemi I. Dosunmu

发明人： Michael T. Morse ,  Mario J. Paniccia ,  Olufemi I. Dosunmu

IPC分类号： H01L31/105

CPC分类号： G02B6/12004 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/132 ,  G02B6/4202 ,  G02B6/4215 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/035272 ,  H01L31/105

摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

摘要翻译： 集成光子器件的侧壁光电探测器及其制造方法。 实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。 一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层 具有被调谐以吸收第二波长的i层的光电检测器。

公开(公告)号：US20100327381A1

公开(公告)日：2010-12-30

申请号：US12495665

申请日：2009-06-30

申请人： Michael T. Morse ,  Mario J. Paniccia ,  Olufemi I. Dosunmu

发明人： Michael T. Morse ,  Mario J. Paniccia ,  Olufemi I. Dosunmu

IPC分类号： H01L31/105 ,  H01L31/18 ,  H01L31/0232

CPC分类号： G02B6/12004 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/132 ,  G02B6/4202 ,  G02B6/4215 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/035272 ,  H01L31/105

摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

摘要翻译： 集成光子器件的侧壁光电探测器及其制造方法。 实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。 一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层 具有被调谐以吸收第二波长的i层的光电检测器。