公开(公告)号：US20100271108A1

公开(公告)日：2010-10-28

申请号：US12764888

申请日：2010-04-21

Applicant: Delfo Nunziato SANFILIPPO ,  Massimo Cataldo Mazzillo ,  Piero Giorgio Fallica

Inventor： Delfo Nunziato SANFILIPPO ,  Massimo Cataldo Mazzillo ,  Piero Giorgio Fallica

IPC: H03K17/74 ,  H01L31/18 ,  H01L31/103

CPC classification number: H01L31/107 ,  H01L27/1463 ,  H01L31/022416

Abstract: An embodiment of a Geiger-mode avalanche photodiode, having: a body made of semiconductor material of a first type of conductivity, provided with a first surface and a second surface and forming a cathode region; and an anode region of a second type of conductivity, extending inside the body on top of the cathode region and facing the first surface. The photodiode moreover has: a buried region of the second type of conductivity, extending inside the body and surrounding an internal region of the body, which extends underneath the anode region and includes the internal region and defines a vertical quenching resistor; a sinker region extending through the body starting from the first surface and in direct contact with the buried region; and a contact region made of conductive material, overlying the first surface and in direct contact with the sinker region.

Abstract translation: 盖革模式雪崩光电二极管的一个实施例具有：由第一导电类型的半导体材料制成的主体，具有第一表面和第二表面并形成阴​​极区; 以及第二导电类型的阳极区域，其在所述体内在所述阴极区域的顶部延伸并面向所述第一表面。 光电二极管还具有：第二导电类型的掩埋区域，在主体内部延伸并且围绕主体的内部区域延伸，该内部区域延伸在阳极区域下方并且包括内部区域并限定垂直淬火电阻器; 从所述第一表面开始并直接与所述埋入区域接触的沉降片区域; 以及由导电材料制成的接触区域，覆盖在第一表面上并与沉降片区域直接接触。

公开(公告)号：US5723349A

公开(公告)日：1998-03-03

申请号：US475070

申请日：1995-06-07

Applicant: Piero Giorgio Fallica

Inventor： Piero Giorgio Fallica

IPC: H01L27/06 ,  H01L21/8234 ,  H01L29/739 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L29/7395

Abstract: A high conductivity IGBT integrated structure comprises a heavily doped semiconductor substrate of a first conductivity type constituting a first electrode of the IGBT, a lightly doped semiconductor layer of a second conductivity type superimposed over the substrate, at least one first doped region of the first conductivity type extending from a top surface of the lightly doped layer thereinto and constituting a channel region of the IGBT, and a second doped region of the second conductivity type extending from said top surface into the first doped region and constituting a second electrode of the IGBT. A buried layer of semiconductor material is sandwiched between the substrate and the lightly doped layer and is constituted by heavily doped regions of the second conductivity type intercalated with lightly doped regions of the second conductivity type.

Abstract translation: 高导电性IGBT集成结构包括构成IGBT的第一电极的第一导电类型的重掺杂半导体衬底，叠加在衬底上的第二导电类型的轻掺杂半导体层，第一导电性的至少一个第一掺杂区 并且构成IGBT的沟道区，以及从所述顶表面延伸到第一掺杂区并构成IGBT的第二电极的第二导电类型的第二掺杂区。 半导体材料的掩埋层夹在衬底和轻掺杂层之间，并且由具有第二导电类型的轻掺杂区的第二导电类型的重掺杂区构成。

公开(公告)号：US20100148079A1

公开(公告)日：2010-06-17

申请号：US12704341

申请日：2010-02-11

Applicant: Giuseppe VALVO ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

Inventor： Giuseppe VALVO ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

IPC: G01T1/02

CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

Abstract: A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

Abstract translation: 提出了一种E-E型辐射探测器。 检测器集成在具有与前表面相对的前表面和后表面的半导体材料芯片中，检测器具有布置在前表面上的至少一个检测单元，用于接收待评估的辐射，其中检测器包括： 从前表面延伸到第一深度的第一类导电性的第一区域; 从第二深度延伸到芯片中的第二类导电体的第二区域，以便到达第一区域; 并且对于每个检测单元，第二类型的电导率的第三区域从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于吸收来自辐射的能量的薄敏感体积由 第一区域和每个第三区域之间的接合点，以及用于吸收来自辐射的进一步能量的厚度敏感体积，由第一区域和第二区域之间的另一接合限定。 对于每个检测单元，检测器还包括设置在第三区域周围并且从前表面延伸到第一区域到包括在第一深度和第三深度之间的绝缘深度的绝缘装置。

公开(公告)号：US20090184317A1

公开(公告)日：2009-07-23

申请号：US12356464

申请日：2009-01-20

Applicant: Delfo Nunziato SANFILIPPO ,  Emilio Antonio SCIACCA ,  Piero Giorgio FALLICA ,  Salvatore Antonio LOMBARDO

Inventor： Delfo Nunziato SANFILIPPO ,  Emilio Antonio SCIACCA ,  Piero Giorgio FALLICA ,  Salvatore Antonio LOMBARDO

IPC: H01L31/036 ,  H01L21/70 ,  H01L31/02

CPC classification number: H01L27/1446 ,  H01L27/14658 ,  H01L27/14689 ,  H01L31/107

Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

Abstract translation: 盖格模式雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型，容纳第二导电类型的第一阴极区，并面向主体的表面， 具有第一导电类型并且具有比主体更高的掺杂水平的阳极区域，其在主体内延伸并且横向于第一阴极区域和与其间隔一定距离的表面，以及延伸穿过本体并绝缘的绝缘区域 活动区域从身体的其余部分，活动区域容纳第一阴极区域和阳极区域。 绝缘区域由金属材料的反射镜区域，具有第二导电类型的沟道截止区域，围绕反射镜区域以及布置在反射镜区域和通道阻挡区域之间的电介质材料的涂覆区域形成。

公开(公告)号：US08476730B2

公开(公告)日：2013-07-02

申请号：US12764888

申请日：2010-04-21

Applicant: Delfo Nunziato Sanfilippo ,  Massimo Cataldo Mazzillo ,  Piero Giorgio Fallica

Inventor： Delfo Nunziato Sanfilippo ,  Massimo Cataldo Mazzillo ,  Piero Giorgio Fallica

IPC: H01L31/06

CPC classification number: H01L31/107 ,  H01L27/1463 ,  H01L31/022416

Abstract: An embodiment of a Geiger-mode avalanche photodiode, having: a body made of semiconductor material of a first type of conductivity, provided with a first surface and a second surface and forming a cathode region; and an anode region of a second type of conductivity, extending inside the body on top of the cathode region and facing the first surface. The photodiode moreover has: a buried region of the second type of conductivity, extending inside the body and surrounding an internal region of the body, which extends underneath the anode region and includes the internal region and defines a vertical quenching resistor; a sinker region extending through the body starting from the first surface and in direct contact with the buried region; and a contact region made of conductive material, overlying the first surface and in direct contact with the sinker region.

Abstract translation: 盖革模式雪崩光电二极管的一个实施例具有：由第一导电类型的半导体材料制成的主体，具有第一表面和第二表面并形成阴​​极区; 以及第二导电类型的阳极区域，其在所述体内在所述阴极区域的顶部延伸并面向所述第一表面。 光电二极管还具有：第二导电类型的掩埋区域，在主体内部延伸并且围绕主体的内部区域延伸，该内部区域延伸在阳极区域下方并且包括内部区域并限定垂直淬火电阻器; 从所述第一表面开始并直接与所述埋入区域接触的沉降片区域; 以及由导电材料制成的接触区域，覆盖在第一表面上并与沉降片区域直接接触。

公开(公告)号：US20120248347A1

公开(公告)日：2012-10-04

申请号：US13431831

申请日：2012-03-27

Applicant: Lucio Renna ,  Clelia Galati ,  Piero Giorgio Fallica

Inventor： Lucio Renna ,  Clelia Galati ,  Piero Giorgio Fallica

IPC: G01N21/01 ,  B29D11/00 ,  G01J1/42

CPC classification number: G02B21/0032 ,  G01J1/0266 ,  G01J1/0411 ,  G01J1/0437 ,  G01J1/0488 ,  G01J1/44 ,  G01N21/6452

Abstract: A confocal optical detector including a light source generating a first optical beam along an axis; an optoelectronic sensor; an optical focusing device, which receives and focuses the first optical beam; and a hole, which receives the first optical beam and is arranged between the optoelectronic sensor and the optical focusing device. The optoelectronic sensor is arranged between the light source and the hole. In addition, the optoelectronic sensor and the optical focusing device are aligned along the axis.

Abstract translation: 一种共焦光学检测器，包括沿轴线产生第一光束的光源; 光电传感器; 光聚焦装置，其接收和聚焦第一光束; 以及孔，其接收第一光束并且布置在光电传感器和光聚焦装置之间。 光电传感器布置在光源和孔之间。 此外，光电传感器和光学聚焦装置沿轴线对准。

公开(公告)号：US08183655B2

公开(公告)日：2012-05-22

申请号：US12704341

申请日：2010-02-11

Applicant: Giuseppe Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

Inventor： Giuseppe Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

IPC: H01L31/0352

CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

Abstract: A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

Abstract translation: 提出了一种E-E型辐射探测器。 检测器集成在具有与前表面相对的前表面和后表面的半导体材料芯片中，检测器具有布置在前表面上的至少一个检测单元，用于接收待评估的辐射，其中检测器包括： 从前表面延伸到第一深度的第一类导电性的第一区域; 从第二深度延伸到芯片中的第二类导电体的第二区域，以便到达第一区域; 并且对于每个检测单元，第二类型的电导率的第三区域从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于吸收来自辐射的能量的薄敏感体积由 第一区域和每个第三区域之间的接合点，以及用于吸收来自辐射的进一步能量的厚度敏感体积，由第一区域和第二区域之间的另一接合限定。 对于每个检测单元，检测器还包括设置在第三区域周围并且从前表面延伸到第一区域到包括在第一深度和第三深度之间的绝缘深度的绝缘装置。

公开(公告)号：US20120024389A1

公开(公告)日：2012-02-02

申请号：US13194583

申请日：2011-07-29

Applicant: Lucio Renna ,  Clelia Galati ,  Natalia Maria Rita Spinella ,  Piero Giorgio Fallica

Inventor： Lucio Renna ,  Clelia Galati ,  Natalia Maria Rita Spinella ,  Piero Giorgio Fallica

IPC: F15D1/00 ,  H01F7/06 ,  B01L3/00 ,  H01F41/06

CPC classification number: F04B43/043 ,  H02K33/16 ,  Y10T29/49071 ,  Y10T137/0318

Abstract: An integrated electromagnetic actuator comprising: a first structural layer; a flexible membrane, extending over the first structural layer and comprising regions of ferromagnetic material; a chamber, delimited between the first structural layer and the flexible membrane; a winding, comprising a plurality of turns of conductive material and extending within the first structural layer; and a core element made of ferromagnetic material, extending within the first structural layer, inside the winding.

Abstract translation: 一种集成的电磁致动器，包括：第一结构层; 柔性膜，在第一结构层上延伸并且包括铁磁材料的区域; 在第一结构层和柔性膜之间限定的腔室; 绕组，包括多个匝的导电材料并在所述第一结构层内延伸; 以及由铁磁材料制成的在元件内部在第一结构层内延伸的芯元件。

公开(公告)号：US06551944B1

公开(公告)日：2003-04-22

申请号：US09544717

申请日：2000-04-06

Applicant: Piero Giorgio Fallica ,  Davide Giuseppe Patti ,  Cirino Rapisarda

Inventor： Piero Giorgio Fallica ,  Davide Giuseppe Patti ,  Cirino Rapisarda

IPC: H01L2100

CPC classification number: H01L21/76232 ,  H01L21/763

Abstract: A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.

Abstract translation: 一种方法，包括以下步骤：在半导体材料体中进行定向蚀刻以形成具有第一宽度的沟槽; 在沟槽下进行半导体材料体的各向同性蚀刻，以形成宽度大于沟槽的空腔; 用介电材料覆盖空腔的壁; 沉积与热氧化物不同的非导电材料以至少部分地填充空腔，以形成与半导体材料体的其余部分分离的单晶岛。 各向同性蚀刻允许形成由半导体材料的支撑区域隔开的至少两个相邻的空腔，其与腔的壁一起被氧化，以在填充非导电材料之前提供对岛的支撑。

公开(公告)号：US08574945B2

公开(公告)日：2013-11-05

申请号：US13241114

申请日：2011-09-22

Applicant: Delfo Nunziato Sanfilippo ,  Emilio Antonio Sciacca ,  Piero Giorgio Fallica ,  Salvatore Antonio Lombardo

Inventor： Delfo Nunziato Sanfilippo ,  Emilio Antonio Sciacca ,  Piero Giorgio Fallica ,  Salvatore Antonio Lombardo

IPC: H01L21/76

CPC classification number: H01L27/1446 ,  H01L27/14658 ,  H01L27/14689 ,  H01L31/107

Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

Abstract translation: 盖格模式雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型，容纳第二导电类型的第一阴极区，并面向主体的表面， 具有第一导电类型并且具有比主体更高的掺杂水平的阳极区域，其在主体内延伸并且横向于第一阴极区域和与其间隔一定距离的表面，以及延伸穿过本体并绝缘的绝缘区域 活动区域从身体的其余部分，活动区域容纳第一阴极区域和阳极区域。 绝缘区域由金属材料的反射镜区域，具有第二导电类型的沟道截止区域，围绕反射镜区域以及布置在反射镜区域和通道阻挡区域之间的电介质材料的涂覆区域形成。