公开(公告)号：US20060177579A1

公开(公告)日：2006-08-10

申请号：US11376402

申请日：2006-03-15

Applicant: Cheol Shin ,  Byoung Cho ,  Sang Sim ,  Jung Kim ,  Won Lee ,  Dae Kim

Inventor： Cheol Shin ,  Byoung Cho ,  Sang Sim ,  Jung Kim ,  Won Lee ,  Dae Kim

IPC: C23C16/00 ,  H05H1/24

CPC classification number: C23C16/45551 ,  C23C16/452 ,  C23C16/45519 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32779 ,  H01J37/32862 ,  H01L21/28562 ,  Y10S438/913

Abstract: Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Abstract translation: 公开了用于制造半导体器件的PEALD（等离子体增强原子层沉积）装置和PEALD方法，该PEALD装置包括：壳体，包括执行沉积反应的反应室; 旋转盘单元，其安装在壳体中并且设置有用于在其上接收晶片以便移动晶片的多个基座; 安装在旋转盘单元上方的壳体上端的气体喷射单元，并且在圆盘的下表面上设置有第一反应气体喷雾器，第二反应气体喷雾器和惰性气体喷雾器，用于将各种气体喷射到壳体中; 连接到气体喷射单元的气体供给单元，用于将第一和第二反应气体和净化气体供应到壳体中; 形成在旋转盘单元周围的排气口; 以及用于产生等离子体以激发第二反应气体的等离子体发生器。

公开(公告)号：US20060090694A1

公开(公告)日：2006-05-04

申请号：US11305686

申请日：2005-12-16

Applicant: Byoung Cho ,  Yong Kim ,  Cheol Shin ,  Won Lee ,  Jung Kim ,  Sang Sim

Inventor： Byoung Cho ,  Yong Kim ,  Cheol Shin ,  Won Lee ,  Jung Kim ,  Sang Sim

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/18 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.

Abstract translation: 本发明涉及使用原子层沉积工艺在衬底上形成氧化硅膜的方法。 具体地，通过使用Si 2 C 6 C 6源的原子层沉积工艺，在低温和高沉积速率下形成氧化硅膜，这与使用 SiCl 4 SO 4源。 在上述方法中使用的原子层沉积装置可以使用HF气体或HF气体和含有-OH基团的气体的混合气体在低温下有效地进行现场清洗。