公开(公告)号：US07848840B2

公开(公告)日：2010-12-07

申请号：US12052024

申请日：2008-03-20

Applicant: Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

Inventor： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

IPC: G06F19/00 ,  G05B13/00 ,  G05B11/42 ,  G05D23/00

CPC classification number: G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

Abstract: Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Abstract translation: 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。

公开(公告)号：US20090272717A1

公开(公告)日：2009-11-05

申请号：US12407548

申请日：2009-03-19

Applicant: Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

Inventor： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

IPC: C23F1/00

CPC classification number: H01L21/30655 ,  Y10T137/0318 ,  Y10T137/87169

Abstract: Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

Abstract translation: 本发明的实施例涉及一种基板蚀刻系统和工艺。 在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率 在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。 在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到 该室用于促进在进出室和面板之间的气体之间的快速气体转变。

公开(公告)号：US20090177310A1

公开(公告)日：2009-07-09

申请号：US12052024

申请日：2008-03-20

Applicant: Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

Inventor： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

IPC: G06F17/00 ,  G05D23/32

CPC classification number: G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

Abstract: Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Abstract translation: 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。