公开(公告)号：US07848840B2

公开(公告)日：2010-12-07

申请号：US12052024

申请日：2008-03-20

申请人： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

发明人： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

IPC分类号： G06F19/00 ,  G05B13/00 ,  G05B11/42 ,  G05D23/00

CPC分类号： G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

摘要： Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

摘要翻译： 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。

公开(公告)号：US20090177310A1

公开(公告)日：2009-07-09

申请号：US12052024

申请日：2008-03-20

申请人： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

发明人： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

IPC分类号： G06F17/00 ,  G05D23/32

CPC分类号： G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

摘要： Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

摘要翻译： 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。

公开(公告)号：US09338871B2

公开(公告)日：2016-05-10

申请号：US12905624

申请日：2010-10-15

申请人： Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

发明人： Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

IPC分类号： G01L21/30 ,  G01R31/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  C23F1/00 ,  H05H1/00 ,  H01J37/32

CPC分类号： H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

摘要翻译： 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US20090272717A1

公开(公告)日：2009-11-05

申请号：US12407548

申请日：2009-03-19

申请人： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

发明人： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

IPC分类号： C23F1/00

CPC分类号： H01L21/30655 ,  Y10T137/0318 ,  Y10T137/87169

摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

摘要翻译： 本发明的实施例涉及一种基板蚀刻系统和工艺。 在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率 在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。 在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到 该室用于促进在进出室和面板之间的气体之间的快速气体转变。

公开(公告)号：US20220240653A1

公开(公告)日：2022-08-04

申请号：US17166253

申请日：2021-02-03

申请人： Chunlei Zhang ,  Yin Sheng Zhang

发明人： Chunlei Zhang ,  Yin Sheng Zhang

IPC分类号： A45F3/04 ,  H04W84/18 ,  G16Y30/00 ,  G16Y40/35 ,  G06F1/16

摘要： The application introduces the technology of Internet of Things into field of attire design, and creates a communicative and sensitive device: the composite and convertible attire with network communication and intelligent sensitive features, referred to as COMS Attire, its purpose is to liberate mobile devices from “hand-held” mode, and use the convertibility of attire to protect and enhance intelligent elements. Attire is big in size, large in capacity, deformable in shape, attachable and detachable in structure, and its carried items can be exposed and concealed at will. Attire is a daily necessity in people's lives, and the most suitable place for development of new generation of mobile intelligent device to replace the miniaturized traditional mobile one; the technical achievements of hardware “miniaturization” make COMS attire more intelligent, more fashionable and popular with users. COMS attire increases the choice of chip types, and expands the installation space of intelligent components.

公开(公告)号：US20110009999A1

公开(公告)日：2011-01-13

申请号：US12502037

申请日：2009-07-13

申请人： Chunlei Zhang ,  Lawrence Wong ,  Kartik Ramaswamy ,  James P. Cruse ,  Hiroji Hanawa

发明人： Chunlei Zhang ,  Lawrence Wong ,  Kartik Ramaswamy ,  James P. Cruse ,  Hiroji Hanawa

IPC分类号： H01L21/306 ,  B05C11/00 ,  G06F19/00

CPC分类号： H01J37/32183 ,  H01J37/32091

摘要： An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.

摘要翻译： 在等离子体电抗器的RF发生器输出端处的阻抗匹配包括多个最小寻求环路控制器，其具有耦合以从反射功率感测电路和相应控制输出端口接收反射的RF功率信号的各个反馈输入端口。 输出端口耦合到连接在RF发生器和反应器的RF功率施加器之间的阻抗匹配电路的可变电抗。

公开(公告)号：US20100251828A1

公开(公告)日：2010-10-07

申请号：US12823935

申请日：2010-06-25

申请人： Jared Ahmad Lee ,  Ezra Robert Gold ,  Chunlei Zhang ,  James Patrick Cruse ,  Richard Charles Fovell

发明人： Jared Ahmad Lee ,  Ezra Robert Gold ,  Chunlei Zhang ,  James Patrick Cruse ,  Richard Charles Fovell

IPC分类号： G01F1/56

CPC分类号： G01F25/0053 ,  G01F25/0038 ,  Y10T137/0368 ,  Y10T137/7761

摘要： A method and apparatus for measuring gas flow are provided. In one embodiment, a calibration circuit for gas control may be utilized to verify and/or calibrate gas flows utilized for backside cooling, process gas delivery, purge gas delivery, cleaning agent delivery, carrier gases delivery and remediation gas delivery, among others.

摘要翻译： 提供了一种测量气体流量的方法和装置。 在一个实施例中，用于气体控制的校准电路可用于验证和/或校准用于后侧冷却，处理气体输送，吹扫气体输送，清洁剂输送，载气输送和修复气体输送等的气体流。

公开(公告)号：US20170323813A1

公开(公告)日：2017-11-09

申请号：US15217513

申请日：2016-07-22

申请人： Fernando M. Silveira ,  Chunlei Zhang ,  Phillip Criminale ,  Jaeyong Cho

发明人： Fernando M. Silveira ,  Chunlei Zhang ,  Phillip Criminale ,  Jaeyong Cho

IPC分类号： H01L21/67 ,  C23C16/50 ,  C23C16/56

CPC分类号： H01L21/67248 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/3299 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109

摘要： An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.

公开(公告)号：US20140336075A1

公开(公告)日：2014-11-13

申请号：US14365847

申请日：2011-12-17

申请人： Yong Qiu ,  Lifu Liu ,  Hui Jiang ,  Fang Chen ,  Chunlei Zhang ,  Jian Wang ,  Jun Wang ,  Huanming Yang ,  Xiuqing Zhang

发明人： Yong Qiu ,  Lifu Liu ,  Hui Jiang ,  Fang Chen ,  Chunlei Zhang ,  Jian Wang ,  Jun Wang ,  Huanming Yang ,  Xiuqing Zhang

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6874 ,  C12Q1/6806 ,  C12Q1/6869 ,  C12Q1/6883 ,  C12Q2600/156 ,  G16B30/00

摘要： The present invention provides a method and system for determining whether a genomic abnormality exists. The method for determining whether a genomic abnormality exists includes the steps of: separating fetal nucleated red blood cells from a sample from a pregnant woman; sequencing at least a part of the genome of the nucleated red blood cells, so as to obtain a sequencing result; and on the basis of the sequencing result, determining whether a genomic abnormality exists in the nucleated red blood cells.

摘要翻译： 本发明提供了确定基因组异常是否存在的方法和系统。 用于确定是否存在基因组异常的方法包括以下步骤：从孕妇中分离胎儿有核的红细胞与样品; 对有核红细胞的至少一部分基因组进行测序，以获得测序结果; 并在测序结果的基础上，确定有核红细胞中是否存在基因组异常。

公开(公告)号：US20110151590A1

公开(公告)日：2011-06-23

申请号：US12846664

申请日：2010-07-29

申请人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

发明人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

IPC分类号： H01L21/00 ,  C23C16/50 ,  H01L21/465

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

摘要： A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

摘要翻译： 一种用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的真正真正修复的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 紫外线辐射可以在低k修复处理之前，之后或期间以任何组合提供在集成蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。