公开(公告)号：US07638161B2

公开(公告)日：2009-12-29

申请号：US09910583

申请日：2001-07-20

Applicant: Kevin Mukai ,  Shankar Chandran

Inventor： Kevin Mukai ,  Shankar Chandran

IPC: C23C16/22 ,  C23C16/00

CPC classification number: H01L21/31625 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02337

Abstract: A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a substrate having a nitride layer in a reaction chamber and providing a silicon source, an oxygen source and a boron source into the reaction chamber while delaying providing a phosphorous source into the reaction chamber to form a borosilicate glass layer over the nitride layer. The method continues by providing the silicon, oxygen, boron and phosphorous sources into the reaction chamber to form a borophosphosilicate film over the borosilicate glass layer.

Abstract translation: 一种用于在半导体晶片上的硼磷硅玻璃膜沉积期间控制掺杂剂浓度以减少半导体晶片上的氮化物消耗的方法和装置。 在本发明的一个实施例中，该方法开始于将具有氮化物层的衬底放置在反应室中，并将硅源，氧源和硼源提供到反应室中，同时延迟将磷源提供到反应室中 在氮化物层上形成硼硅酸盐玻璃层。 该方法继续通过将硅，氧，硼和磷源提供到反应室中以在硼硅酸盐玻璃层上形成硼磷硅酸盐膜。

公开(公告)号：US06170492B2

公开(公告)日：2001-01-09

申请号：US09097411

申请日：1998-06-15

Applicant: Hiroyuki Ueda ,  Hirotaka Tanabe ,  Makoto Okubo ,  Shankar Chandran ,  Ellie Yieh

Inventor： Hiroyuki Ueda ,  Hirotaka Tanabe ,  Makoto Okubo ,  Shankar Chandran ,  Ellie Yieh

IPC: B08B900

CPC classification number: H01J37/32935 ,  H01J37/3299 ,  H01J2237/186 ,  Y10S438/905

Abstract: The present invention provides a method and apparatus for detecting the end point of a process by monitoring the position of a valve during the process. In one aspect, a cleaning process is performed in the chamber, and a controller monitors the valve position to determine the end point of the process which corresponds to a decrease in the number of steps in the valve position required to achieve a stable throttle valve position after the cleaning process is complete.

Abstract translation: 本发明提供了一种通过在该过程期间监视阀的位置来检测过程终点的方法和装置。 在一个方面，在室中执行清洁处理，并且控制器监视阀位置以确定过程的终点，其对应于实现稳定节气门位置所需的阀位数的减少 清洁过程完成后。

公开(公告)号：US06514882B2

公开(公告)日：2003-02-04

申请号：US09789455

申请日：2001-02-19

Applicant: Kevin M. Mukai ,  Shankar Chandran

Inventor： Kevin M. Mukai ,  Shankar Chandran

IPC: H07L21469

CPC classification number: H01L21/02129 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31051 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/3185 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.

公开(公告)号：US06218268B1

公开(公告)日：2001-04-17

申请号：US09076170

申请日：1998-05-05

Applicant: Li-Qun Xia ,  Ellie Yieh ,  Maria Galiano ,  Francimar Campana ,  Shankar Chandran

Inventor： Li-Qun Xia ,  Ellie Yieh ,  Maria Galiano ,  Francimar Campana ,  Shankar Chandran

IPC: H01L2176

CPC classification number: H01L21/02129 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31625

Abstract: A method for forming a BPSG film from a two-step deposition process and related apparatus and devices. A conformal layer of BPSG is deposited on a substrate. A more stable layer of BPSG is deposited at a higher deposition rate over the conformal layer. The method is suitable for filling trenches at least as narrow as 0.06 microns with aspect ratios of at least 5.5:1.

Abstract translation: 一种从两步沉积工艺形成BPSG膜的方法及相关设备和装置。 BPSG的保形层沉积在基底上。 在保形层上以更高的沉积速率沉积更稳定的BPSG层。 该方法适用于填充至少为0.06微米至少为5.5：1的纵横比的沟槽。

公开(公告)号：US20050103266A1

公开(公告)日：2005-05-19

申请号：US10968420

申请日：2004-10-18

Applicant: Shankar Chandran ,  Scott Hendrickson ,  Gwendolyn Jones ,  Shankar Venkataraman ,  Ellie Yieh

Inventor： Shankar Chandran ,  Scott Hendrickson ,  Gwendolyn Jones ,  Shankar Venkataraman ,  Ellie Yieh

IPC: B08B9/08 ,  C23C16/44 ,  H01L21/304 ,  C25F1/00 ,  C23C16/00

CPC classification number: C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.

Abstract translation: 一种减少使用反应性等离子体清洗工艺清洁处理室所需时间的方法和装置。 在基本上纯的惰性气体气体的流中，在Astron氟源发生器中形成等离子体。 在形成等离子体之后，引入氟源气体的流动，使得氟源流以不大于1.67标准立方厘米/秒的速度加速（scc / s < 2 ）。 以这种方式，等离子体包含多个自由基和解离的惰性气体原子，限定清洁混合物。 惰性气体与氟源的比例大于1:1。

公开(公告)号：US06596343B1

公开(公告)日：2003-07-22

申请号：US09557079

申请日：2000-04-21

Applicant: Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

Inventor： Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

IPC: C23C1600

CPC classification number: C30B29/06 ,  C23C16/40 ,  C23C16/452 ,  C30B25/02

Abstract: A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract translation: 一种用于通过使羟基自由基与前体反应以使前体分解并形成沉积在基底上的膜来处理半导体衬底的方法。 在化学气相沉积反应器外部的羟基离子产生装置中生产的羟基与前体混合以形成羟基离子前体混合物。 将羟基离子前体混合物引入化学气相沉积反应器。