公开(公告)号：US08754588B2

公开(公告)日：2014-06-17

申请号：US13563173

申请日：2012-07-31

申请人： Sinsuke Minaki ,  Jun Matsuzaki ,  Tadahiro Kono ,  Koji Yamashita ,  Hiroyuki Matsumoto ,  Atusi Ootubo

发明人： Sinsuke Minaki ,  Jun Matsuzaki ,  Tadahiro Kono ,  Koji Yamashita ,  Hiroyuki Matsumoto ,  Atusi Ootubo

IPC分类号： H05B37/02

CPC分类号： H05B33/0884 ,  H05B33/0821

摘要： An illumination apparatus including: a power supply circuit which outputs a DC power obtained by rectifying an AC voltage and stepping up the rectified voltage; a light source unit having semiconductor light emitting elements turned on by the DC power; and a housing formed of a conductive material that is grounded through a ground path and on which the power supply circuit and the light source unit are mounted. When one of power feed lines is cut off, the light emitting elements are supplied with an AC power from an AC power source through the ground path and a stray capacitance formed between the light source unit and the housing, and a forward voltage of the light emitting elements has a light emission level hardly recognizable.

摘要翻译： 一种照明装置，包括：电源电路，其输出通过对AC电压进行整流而得到的直流电力，并提高整流电压; 具有通过所述直流电源接通的半导体发光元件的光源单元; 以及由导电材料形成的壳体，其通过接地路径接地，并且电源电路和光源单元安装在该壳体上。 当切断供电线之一时，发光元件从交流电源通过接地路径提供AC电力，并在光源单元和壳体之间形成杂散电容，并且将光的正向电压 发光元件的发光水平难以识别。

公开(公告)号：US20130063038A1

公开(公告)日：2013-03-14

申请号：US13563173

申请日：2012-07-31

申请人： Sinsuke MINAKI ,  Jun MATSUZAKI ,  Tadahiro KONO ,  Koji YAMASHITA ,  Hiroyuki MATSUMOTO ,  Atusi OOTUBO

发明人： Sinsuke MINAKI ,  Jun MATSUZAKI ,  Tadahiro KONO ,  Koji YAMASHITA ,  Hiroyuki MATSUMOTO ,  Atusi OOTUBO

IPC分类号： H05B37/02

CPC分类号： H05B33/0884 ,  H05B33/0821

摘要： An illumination apparatus including: a power supply circuit which outputs a DC power obtained by rectifying an AC voltage and stepping up the rectified voltage; a light source unit having semiconductor light emitting elements turned on by the DC power; and a housing formed of a conductive material that is grounded through a ground path and on which the power supply circuit and the light source unit are mounted. When one of power feed lines is cut off, the light emitting elements are supplied with an AC power from an AC power source through the ground path and a stray capacitance formed between the light source unit and the housing, and a forward voltage of the light emitting elements has a light emission level hardly recognizable.

摘要翻译： 一种照明装置，包括：电源电路，其输出通过对AC电压进行整流而得到的直流电力，并提高整流电压; 具有通过所述直流电源接通的半导体发光元件的光源单元; 以及由导电材料形成的壳体，其通过接地路径接地，并且电源电路和光源单元安装在该壳体上。 当切断供电线之一时，发光元件从交流电源通过接地路径提供AC电力，并在光源单元和壳体之间形成杂散电容，并且将光的正向电压 发光元件的发光水平难以识别。

公开(公告)号：US08278163B2

公开(公告)日：2012-10-02

申请号：US12507985

申请日：2009-07-23

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

IPC分类号： H01L21/268 ,  G21K5/10

CPC分类号： H01L21/02691 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/268

摘要： A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

摘要翻译： 一种半导体处理装置，包括：要安装具有要加工的半导体膜的衬底的阶段; 供给部，其以使得能量束的照射点以给定间隔对准的方式将多个能量束提供到安装在台上的半导体膜上; 以及控制部，其使所述多个能量束和所述基板相对于与所述供给部供给的所述多个能量束的照射点的排列不平行的方向移动，并且利用所述照射来扫描所述半导体膜 多个能量束的点平行，从而控制半导体膜上的热处理。

公开(公告)号：US20110033999A1

公开(公告)日：2011-02-10

申请号：US12847200

申请日：2010-07-30

申请人： Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

发明人： Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

IPC分类号： H01L21/336 ,  H01L21/22

CPC分类号： H01L29/78621 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/2255 ,  H01L29/66757

摘要： A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.

摘要翻译： 掺杂方法包括：将含有选自基本上由氢，氮，氧和碳组成的组的锑化合物的锑化合物与锑一起沉积到基材表面的第一步骤; 干燥材料溶液以在基材上形成锑化合物层的第二步骤; 以及进行热处理以使锑化合物层中的锑扩散到基板中的第三步骤。

公开(公告)号：US07598160B2

公开(公告)日：2009-10-06

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/36

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种制造薄膜半导体器件的方法。 半导体薄膜包括半导体薄膜和栅电极，并且通过照射能量束而将有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20080241981A1

公开(公告)日：2008-10-02

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20070212860A1

公开(公告)日：2007-09-13

申请号：US11684908

申请日：2007-03-12

申请人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

发明人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed, wherein the semiconductor thin film is completely melted and the irradiation conditions of the energy beam are so set that the semiconductor thin film at a central position of the energy beam is finally crystallized in association with the scanning with the energy beam.

摘要翻译： 提供了一种使半导体薄膜结晶的方法。 该方法包括在以给定速度扫描的同时在半导体薄膜上连续照射能量束，其中半导体薄膜完全熔化，能量束的照射条件如此设定，使得半导体薄膜位于 能量束最终与能量束的扫描相结合。

公开(公告)号：US5541829A

公开(公告)日：1996-07-30

申请号：US425643

申请日：1995-04-20

申请人： Minorua Maehara ,  Hiroshi Nishimura ,  Katsumi Sato ,  Toshiya Kanja ,  Tadahiro Kono

发明人： Minorua Maehara ,  Hiroshi Nishimura ,  Katsumi Sato ,  Toshiya Kanja ,  Tadahiro Kono

IPC分类号： H02M7/523 ,  H02M7/538 ,  H05B41/282 ,  H02J3/00 ,  H02M5/45

CPC分类号： H02M7/5236 ,  H02M7/53803 ,  H05B41/2825

摘要： An electric power source device is provided with a current compensating circuit capable of feeding to switching elements included in an inverter circuit currents substantially mutually anti-phase, the current compensating circuit thus reducing the currents flowing to the switching elements and allowing the switching elements of a small current rating to be utilizable.

摘要翻译： 电源装置设置有电流补偿电路，其能够馈送到包括在逆变器电路中的开关元件基本上相互反相的电流，因此电流补偿电路减小流向开关元件的电流并允许开关元件 小电流额定值可用。

公开(公告)号：US20100051830A1

公开(公告)日：2010-03-04

申请号：US12507985

申请日：2009-07-23

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

IPC分类号： H01L21/02

CPC分类号： H01L21/02691 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/268

摘要： A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

摘要翻译： 一种半导体处理装置，包括：要安装具有要加工的半导体膜的衬底的阶段; 供给部，其以使得能量束的照射点以给定间隔对准的方式将多个能量束提供到安装在台上的半导体膜上; 以及控制部，其使所述多个能量束和所述基板相对于与所述供给部供给的所述多个能量束的照射点的排列不平行的方向移动，并且利用所述照射来扫描所述半导体膜 多个能量束的点平行，从而控制半导体膜上的热处理。

公开(公告)号：US07521712B2

公开(公告)日：2009-04-21

申请号：US11685550

申请日：2007-03-13

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L29/76

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。