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    SUBSTRATE PROCESSING APPARATUS AND METHOD
    1.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND METHOD 审中-公开

    公开(公告)号：US20190330740A1

    公开(公告)日：2019-10-31

    申请号：US15967146

    申请日：2018-04-30

    Applicant: ASM IP Holding B.V.

    Inventor： Arjen Klaver

    IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44

    Abstract: A substrate processing apparatus with a reaction chamber and a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber is provided. A first and second gas injector provides a process gas to the interior of the reaction chamber from a source pipe. A gas control system provides a flow of process gas from the source pipe to the first injector while restricting a flow of the same process gas from the source pipe to the second injector.

    Wafer boat
    2.
    发明授权
    Wafer boat 有权
    晶圆船

    公开(公告)号：US09153466B2

    公开(公告)日：2015-10-06

    申请号：US13871279

    申请日：2013-04-26

    Applicant: ASM IP Holding B.V.

    Inventor： Lucian C. Jdira ,  Arjen Klaver ,  Klaas P. Boonstra ,  Chris G. M. De Ridder ,  Theodorus G. M. Oosterlaken

    IPC: H01L21/673

    CPC classification number: H01L21/67309 ,  H01L21/67303

    Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.

    Abstract translation: 用于容纳半导体晶片的晶片舟包括两个侧杆和至少一个后杆，所述杆垂直定向并在顶部构件和底部构件之间延伸。 杆包括形成在相应高度处的垂直间隔开的凹部，在相同高度处的凹槽限定用于以基本上水平的方向接收和支撑晶片的晶片容置，所述凹部具有改进的形状。 凹槽的面向上的表面包括在凹部的向内区域中的第一平坦表面，其在凹部的向外方向上是水平的或向上倾斜的，并且在凹部的外部区域中的第二平坦表面在第一平坦表面中向下倾斜 凹槽的向外方向。 第一和第二表面的交点形成用于支撑晶片的边缘。 凹槽容易加工并防止损坏晶片。

    LAYER FORMING METHOD AND APPARATUS
    4.
    发明申请
    LAYER FORMING METHOD AND APPARATUS 审中-公开

    公开(公告)号：US20190066997A1

    公开(公告)日：2019-02-28

    申请号：US15690017

    申请日：2017-08-29

    Applicant: ASM IP Holding B.V.

    Inventor： Arjen Klaver ,  Werner Knaepen ,  Lucian Jdira ,  Gido van der Star ,  Ruslan Kvetny

    IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

    Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

    METHOD OF FORMING A SILICON COMPRISING LAYER
    6.
    发明公开
    METHOD OF FORMING A SILICON COMPRISING LAYER 审中-公开

    公开(公告)号：US20230360905A1

    公开(公告)日：2023-11-09

    申请号：US18312019

    申请日：2023-05-04

    Applicant: ASM IP Holding, B.V.

    Inventor： Werner Knaepen ,  Arjen Klaver ,  Dieter Pierreux ,  Bert Jongbloed

    IPC: H01L21/02 ,  C23C16/455

    CPC classification number: H01L21/0217 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45574 ,  H01L21/02211 ,  H01L21/0228

    Abstract: A method for forming a silicon-comprising layer on a substrate may comprise providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace. A repetitive deposition cycle is performed. The deposition cycle comprises a first deposition pulse and a second deposition pulse comprising a provision, into the process chamber, of a first precursor and a second precursor, respectively. The deposition cycle further comprises a first purge pulse and a second purge pulse for removing, from the process chamber, a portion of the first precursor and a portion of the second precursor, respectively. The process chamber is maintained, during the deposition cycle, at a process temperature in a range from about 400° C. to about 650° C. and at a first pressure being different from a second pressure, during the first deposition pulse and during the second deposition pulse, respectively.

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