公开(公告)号：US09353441B2

公开(公告)日：2016-05-31

申请号：US13646403

申请日：2012-10-05

Applicant: ASM IP Holding B.V.

Inventor： Hsiao Pei Chung ,  Hirofumi Arai ,  Dai Ishikawa

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  H01L21/67 ,  H01J37/32 ,  F27D5/00

CPC classification number: C23C16/4586 ,  F27D5/0037 ,  H01J37/32724 ,  H01L21/67109

Abstract: A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.

Abstract translation: 用于支撑基板的基座包括：用于加热基板的加热板; 用于冷却基板的上部冷却板，安装在加热板上并设置有用于使冷却流体通过的上部流体路径; 以及用于冷却基板的下部冷却板，安装在加热板下方并且包括用于使冷却流体从其中通过的下部流体路径。

公开(公告)号：US20140096716A1

公开(公告)日：2014-04-10

申请号：US13646403

申请日：2012-10-05

Applicant: ASM IP HOLDING B.V.

Inventor： Hsiao Pei Chung ,  Hirofumi Arai ,  Dai Ishikawa

IPC: F27D15/02 ,  C23C16/46

CPC classification number: C23C16/4586 ,  F27D5/0037 ,  H01J37/32724 ,  H01L21/67109

Abstract: A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.

Abstract translation: 用于支撑基板的基座包括：用于加热基板的加热板; 用于冷却基板的上部冷却板，安装在加热板上并设置有用于使冷却流体通过的上部流体路径; 以及用于冷却基板的下部冷却板，安装在加热板下方并且包括用于使冷却流体从其中通过的下部流体路径。

公开(公告)号：US09190263B2

公开(公告)日：2015-11-17

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。

公开(公告)号：US09136108B2

公开(公告)日：2015-09-15

申请号：US14018231

申请日：2013-09-04

Applicant: ASM IP Holding B.V.

Inventor： Kiyohiro Matsushita ,  Hirofumi Arai

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02126 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3105

Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

Abstract translation: 一种用于恢复形成在基板上的电介质层的多孔表面的方法，包括：（i）在反应空间中提供其上形成具有末端羟基的多孔表面的电介质层的基板作为外层; （ii）向反应空间供给含有Si-N键的Si-N化合物的气体，以将Si-N化合物化学吸附到具有末端羟基的表面上; （iii）在氧化气氛中用UV光脉冲照射Si-N化合物 - 化学吸附表面以氧化表面并向表面提供端羟基; 和（iv）重复步骤（ii）至（iii）以在电介质层的多孔表面上形成膜以进行还原。

公开(公告)号：US20150064932A1

公开(公告)日：2015-03-05

申请号：US14018231

申请日：2013-09-04

Applicant: ASM IP Holding B.V.

Inventor： Kiyohiro Matsushita ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3105

Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

Abstract translation: 一种用于恢复形成在基板上的电介质层的多孔表面的方法，包括：（i）在反应空间中提供其上形成具有末端羟基的多孔表面的电介质层的基板作为外层; （ii）向反应空间供给含有Si-N键的Si-N化合物的气体，以将Si-N化合物化学吸附到具有末端羟基的表面上; （iii）在氧化气氛中用UV光脉冲照射Si-N化合物 - 化学吸附表面以氧化表面并向表面提供端羟基; 和（iv）重复步骤（ii）至（iii）以在电介质层的多孔表面上形成膜以进行还原。

公开(公告)号：US20150056821A1

公开(公告)日：2015-02-26

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。