公开(公告)号：US20250029829A1

公开(公告)日：2025-01-23

申请号：US18770973

申请日：2024-07-12

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  Sungdae Woo ,  JuSeok Jeon ,  SeungRyul Lee ,  Hyunchul Kim ,  Yujin Kim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/033

Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.

公开(公告)号：US20240186139A1

公开(公告)日：2024-06-06

申请号：US18524307

申请日：2023-11-30

Applicant: ASM IP Holding B.V.

Inventor： Sungdae Woo ,  Kwangman Ko ,  SungBae Kim ,  JuSeok Jeon

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/0234 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32082 ,  H01J2237/332

Abstract: Provided is a method of forming a TiN spacer film on the patterned structure comprising a step of loading a substrate onto a chamber, a step of forming a film on the substrate; a step of post treatment to the film; and a step of unloading the substrate, wherein the step of forming the film on the substrate comprises supplying a first gas and a second gas sequentially and alternately, wherein the step of post treating to the film comprises supplying treatment gas to the substrate, wherein the second gas and the treatment gas are activated by RF power.